公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2020 | Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes | Lynsky, C.; Alhassan, A.I.; Lheureux, G.; Bonef, B.; Denbaars, S.P.; Nakamura, S.; Wu, Y.-R.; Weisbuch, C.; Speck, J.S.; YUH-RENN WU | Physical Review Materials | 18 | 15 | |
2020 | Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors | Chow, Y.C.; Lee, C.; Wong, M.S.; Wu, Y.-R.; Nakamura, S.; Denbaars, S.P.; Bowers, J.E.; Speck, J.S.; YUH-RENN WU | Optics Express | 9 | 10 | |
2020 | Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport | Marcinkevi?ius, S.; Yapparov, R.; Kuritzky, L.Y.; Wu, Y.-R.; Nakamura, S.; Speck, J.S.; YUH-RENN WU | Physical Review B | 4 | 6 | |
2019 | Modeling dislocation-related leakage currents in GaN p-n diodes | Robertson, C.A.; Qwah, K.S.; Wu, Y.-R.; Speck, J.S.; YUH-RENN WU | Journal of Applied Physics | 6 | 6 | |
2020 | Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder | Qwah, K.S.; Monavarian, M.; Lheureux, G.; Wang, J.; Wu, Y.-R.; Speck, J.S.; YUH-RENN WU | Applied Physics Letters | 12 | 12 | |