公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2020 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Nanophotonics | |||
2021 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Frontiers in Optics and Photonics | |||
2022 | Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga) N Alloy Quantum Barriers | Lynsky C; Lheureux G; Bonef B; Qwah K.S; White R.C; Denbaars S.P; Nakamura S; YUH-RENN WU ; Weisbuch C; Speck J.S. | Physical Review Applied | 7 | 7 | |
2021 | Modeling dislocation-related reverse bias leakage in GaN p-n diodes | Qwah K.S; Robertson C.A; Wu Y.-R; Speck J.S.; YUH-RENN WU | Semiconductor Science and Technology | |||
2022 | Vertical hole transport through unipolar InGaN quantum wells and double heterostructures | Qwah K.S; Monavarian M; Ho W.Y; YUH-RENN WU ; Speck J.S. | Physical Review Materials | 2 | 0 |