公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2003 | Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect | Kuo, J.B.; Sun, E.C.; Lin, M.T.; KuoJB | The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. | 0 | 0 |