公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1996 | Analysis of the dark current in the bulk of InAs diode detectors | Kuan, C.H.; Lin, R.-M.; Tang, S.-F.; Sun, T.-P.; CHIEH-HSIUNG KUAN | Journal of Applied Physics | | | |
2000 | High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector | Tang, S.-F.; Lin, S.-Y.; Lee, S.-C.; Kuan, C.H.; Cherng, Y.-T.; CHIEH-HSIUNG KUAN | International Electron Devices Meeting, IEDM | | | |
2006 | High-temperature operation normal incident 256 × 256 InAs - GaAs quantum-dot infrared photodetector focal plane array | Tang, S.-F.; Chiang, C.-D.; Weng, P.-K.; Gau, Y.-T.; Luo, J.-J.; Yang, S.-T.; Shih, C.-C.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE | IEEE Photonics Technology Letters | 76 | 66 | |
2001 | Improvement of current leakage in the InAs photodetector by molecular beam epitaxy | Lin, R.-M.; Tang, S.-F.; Lee, S.-C.; CHIEH-HSIUNG KUAN ; SI-CHEN LEE | Journal of Crystal Growth | 14 | 11 | |
2001 | InAs quantum dots on (001) GaAs substrate with two groups of different sizes under arsenic shutter closed condition | Tang, S.-F.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE | Journal of Nanoparticle Research | 6 | 5 | |
2002 | InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al <inf>0.3</inf> Ga <inf>0.7</inf> As blocking barriers | Tang, S.-F.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE | IEEE Transactions on Electron Devices | 35 | 31 | |
2002 | Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement | Tang, S.-F.; Lin, S.-Y.; SI-CHEN LEE ; Cherng, Y.-T. | Journal of Applied Physics | 2 | 2 | |
2001 | Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector | Tang, S.-F.; Lin, S.-Y.; SI-CHEN LEE | Applied Physics Letters | 148 | 140 | |
1997 | Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy | Lin, R.-M.; Tang, S.-F.; SI-CHEN LEE ; CHIEH-HSIUNG KUAN ; Chen, G.-S.; Sun, T.-P.; Wu, J.-C. | IEEE Transactions on Electron Devices | 31 | 30 | |
2000 | Study of current leakage in InAs p-i-n photodetectors | Lin, R.-M.; Tang, S.-F.; Kuan, C.H.; CHIEH-HSIUNG KUAN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 7 | 4 | |
2001 | Temperature-stable (wavelength ∼ 1μm) InAs/GaAs quantum dot light-emitting diode | Tang, S.-F.; Lin, S.-Y.; Lee, S.-C.; Tsai, C.-C.; SI-CHEN LEE | IEEE Conference on Nanotechnology | 2 | 0 | |
2007 | Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays | Chang, C.-Y.; Chang, H.-Y.; Chen, C.-Y.; Tsai, M.-W.; Chang, Y.-T.; SI-CHEN LEE ; Tang, S.-F. | Applied Physics Letters | 59 | 64 | |