公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
1996 | Experimental study of a coplanar strip-line based high-speed device interconnect | Huang, S.L.; Lee, K.C.; Tsai, P.J.; Lin, J.Y.; Chen, W.J.; Lin, J.S.; SHENG-LUNG HUANG | Materials Chemistry and Physics | 0 | 0 |