| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2007 | Band offsets and charge storage characteristics of atomic layer deposited high- k Hf O<inf>2</inf> Ti O<inf>2</inf> multilayers | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lin, C.-H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Applied Physics Letters | 59 | 47 | |
| 2007 | Charge trapping characteristics of atomic-layer-deposited HfO<inf>2</inf> films with Al<inf>2</inf>O<inf>3</inf> as a blocking oxide for high-density non-volatile memory device applications | Maikap, S.; Lee, H.Y.; Wang, T.-Y.; Tzeng, P.-J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Semiconductor Science and Technology | 117 | 121 | |
| 2007 | HfO<inf>2</inf>/HfAlO/HfO<inf>2</inf> nanolaminate charge trapping layers for high-performance nonvolatile memory device applications | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 12 | 12 | |
| 2008 | Highly thermally stable and reproducible of ALD RuO<inf>2</inf> nanocrystal floating gate memory devices with large memory window and good retention | Maikap, S.; Banerjee, W.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Kao, M.-J.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 1 | 0 | |
| 2008 | Low voltage operation of high-�e HfO<inf>2</inf>/TiO <inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> single quantum well for nanoscale flash memory device applications | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics | 9 | 9 | |
| 2008 | Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Electrochemical and Solid-State Letters | 25 | 24 | |
