公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2017 | Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals | Lin, C. Y.; Ulaganathan, R. K.; Sankar, R.; Chou, F. C. | AIP Advances | 12 | 3 | |
2018 | Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes | Li, Y.; Wang, T.; Wang, H.; Li, Z.; Chen, Y.; West, D.; Sankar, R.; Ulaganathan, R. K.; Chou, F. ; Wetzel, C.; Xu, C. Y.; Zhang, S.; Shi, S. F. | Nano Letters | 32 | 47 | |
2016 | High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors | Ulaganathan, R. K.; Lu, Y. Y.; Kuo, C. J.; Tamalampudi, S. R.; Sankar, R.; Boopathi, K. M.; Anand, A.; Yadav, K.; Mathew, R. J.; Liu, C. R.; Chou, F. C. ; YIT-TSONG CHEN | Nanoscale | 128 | 116 | |
2020 | High-Performance Flexible Broadband Photodetectors Based on 2D Hafnium Selenosulfide Nanosheets | Ulaganathan, R. K.; Sankar, R.; Lin, C. Y.; Murugesan, R. C.; Tang, K.; Chou, F. C. | Advanced Electronic Materials | 23 | 23 | |
2018 | Ultra-high performance flexible piezopotential gated In1-: XSnxSe phototransistor | Paul Inbaraj, C. R.; Mathew, R. J.; Haider, G.; Chen, T. P.; Ulaganathan, R. K.; Sankar, R.; Bera, K. P.; Liao, Y. M.; Kataria, M.; Lin, H. I.; Chou, F. C. ; Chen, Y. T.; Lee, C. H.; YANG-FANG CHEN | Nanoscale | 12 | 9 | |
2018 | Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering | Li, Y.; Wang, T.; Wu, M.; Cao, T.; Chen, Y.; Sankar, R.; Ulaganathan, R. K.; Chou, F. ; Wetzel, C.; Xu, C. Y.; Louie, S. G.; Shi, S. F. | 2D Materials | 76 | 82 | |