Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2018 | Atom-to-atom interaction of O <inf>2</inf> with epi Ge(001)-2 ? 1 in elucidating GeO <inf>x</inf> formation | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 5 | 6 | |
2017 | Atomic layer deposited single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A | Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
2018 | Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | ACS Omega | 7 | 8 | |
2017 | Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study | Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Surface Science | 7 | 7 | |
2018 | In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surface | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 3 | 3 | |
2020 | Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.R.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | Applied Physics Express | 8 | 7 | |
2019 | Microscopic views of atomic and molecular oxygen bonding with epi ge(001)-2 × 1 studied by high-resolution synchrotron radiation photoemission | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Nanomaterials | 5 | 5 | |
2017 | Surface electronic structure of epi germanium (001)-2 ? 1 | Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 17 | 14 | |
2020 | Surface electronic structure of Si<inf>1-x</inf>Ge <inf>x</inf>(001)-2 × 1: A synchrotron radiation photoemission study | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 6 | 6 | |