| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2010 | A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method | Lu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU | Journal of Applied Physics | 0 | 0 | |
| 2010 | Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N | Huang, Huei-Min; Huang, Hung-Hsun; Wu, Yuh-Renn; Lu, Tien-Chang; YUH-RENN WU | Optics Express | 4 | 3 | |
| 2012 | Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure | Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU | Applied Physics Letters | 102 | 93 | |
| 2014 | Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) InGaN single quantum wells | Zhao, Yuji; Wu, Feng; Yang, Tsung-Jui; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.; YUH-RENN WU | Applied Physics Express | 15 | 16 | |
| 2014 | Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics | Chen, Ting-Gang; Yu, Peichen; Chen, Shih-Wei; Chang, Feng-Yu; Huang, Bo-Yu; Cheng, Yu-Chih; Hsiao, Jui-Chung; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | Progress in Photovoltaics | 59 | 51 | |
| 2019 | Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling | Michalczewski, Krystian; Martyniuk, Piotr; Kubiszyn, Lukasz; Wu, Chao-Hsin; Wu, Yuh-Renn; Jurenczyk, Jarek; Rogalski, Antoni; Piotrowski, Jozef; CHAO-HSIN WU | Ieee Electron Device Letters | 0 | 9 | |
| 2022 | Development of time-dependent Exciton diffusion solver for modeling Triplet-Triplet Fusion Mechanism in OLEDs | Huang, Jun Yu; Hung, Hsiao Chun; Hsu, Kung Chi; Chen, Chia Hsun; Lee, Pei Hsi; Lin, Hung Yi; Lin, Bo Yen; MAN-KIT LEUNG ; Chiu, Tien Lung; Lee, Jiun-Haw; Wu, Yuh-Renn | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
| 2014 | Efficiency dip observed with InGaN-based multiple quantum well solar cells | Lai, K. Y.; Lin, G. J.; Wu, Yuh-Renn; Tsai, Meng-Lun; He, Jr-Hau; YUH-RENN WU | Optics Express | 6 | 7 | |
| 2015 | Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy | Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 47 | 37 | |
| 2013 | GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities | Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU | IEEE Transactions on Electron Devices | 6 | 6 | |
| 2015 | High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier | Pan, Chih-Chien; Yan, Qimin; Fu, Houqiang; Zhao, Yuji; Wu, Yuh-Renn; Van de Walle, Chris; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU | Electronics Letters | 20 | 19 | |
| 2014 | High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy | Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 86 | 82 | |
| 2015 | Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors | Lee, Finella; Su, Liang-Yu; Wang, Chih-Hao; Wu, Yuh-Renn; Huang, Jianjang; JIAN-JANG HUANG ; YUH-RENN WU | IEEE Electron Device Letters | 99 | 91 | |
| 2014 | Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals | Li, Hsiang-Wei; Yin, Yu-Feng; Chang, Chen-Yu; Tsai, Chen-Hung; Hsu, Yen-Hsiang; Lin, Da-Wei; Wu, Yuh-Renn; Kuo, Hao-Chung; Huang, Jian Jang; YUH-RENN WU | IEEE Journal of Quantum Electronics | 0 | 0 | |
| 2010 | Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers | Dang, Po-Yuan; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 0 | 0 | |
| 2015 | Percolation transport study in nitride based LED by considering the random alloy fluctuation | Wu, Chen-Kuo; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | Journal of Computational Electronics | 24 | 20 | |
| 2013 | Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells | Wang, Hsun-Wen; Yu, Peichen; Wu, Yuh-Renn; Kuo, Hao-Chung; Chang, Edward Yi; Lin, Shiuan-Huei; YUH-RENN WU | IEEE Journal of Photovoltaics | 7 | 10 | |
| 2013 | Scaling performance of Ga2O3/GaN nanowire field effect transistor | Li, Chi-Kang; Yeh, Po-Chun; Yu, Jeng-Wei; Peng, Lung-Han; Wu, Yuh-Renn; LUNG-HAN PENG ; YUH-RENN WU | Journal of Applied Physics | 10 | 9 | |
| 2013 | Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage | Kawaguchi, Yoshinobu; Huang, Chia-Yen; Wu, Yuh-Renn; Zhao, Yuji; DenBaars, Steven P.; Nakamura, Shuji; YUH-RENN WU | Japanese Journal of Applied Physics | 18 | 25 | |
| 2012 | Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode | Wang, Chang-Pei; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 25 | 24 | |
