公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2017 | The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing | Lee, F.-Y.; Wu, Z.-Z.; Kao, L.-C.; Chang, F.-M.; Chen, S.-W.; Jangjian, S.-K.; Cheng, H.-Y.; Chen, W.-L.; Chang, Y.-M. ; Lo, K.Y. | Scientific Reports | 3 | 3 | |
2020 | Structural evolution of in situ boron-doped SiGe ultrathin film analyzed by multi-optical methods | Chang, F.-M.; Wu, Z.-Z.; Chen, Y.; Yen, T.-Y.; Huang, Y.-H.; Chong, L.-Y.; Jangjian, S.-K.; Lee, F.-Y.; Chang, Y.-M. ; Lo, K.-Y. | Nanotechnology | 1 | 1 |