公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2021 | High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls | Hou W.-C; Shih P.-C; Wu B.B.-R; HAO-HSIUNG LIN ; JIUN-YUN LI | IEEE Transactions on Electron Devices | 2 | 1 |