公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Nitrogen atomic rearrangement in thermally annealed GaAsSbN | Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN | OPT2009 | | | |
2005 | Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells | H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN | OPT2005 | | | |
2009 | Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures | P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN | Journal of Applied Physics. | 9 | 8 | |
2010 | Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy | H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN | Materials Chemistry and Physics | 6 | 7 | |
2007 | Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells | H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN | physica status solidi (a) | 2 | 2 | |
2013 | Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure | J. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | Journal of Luminescence | 5 | 5 | |
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, | H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN | Physica Status Solidi (A) Applications and Materials Science | 0 | 0 | |
2005 | The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well | G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN | OPT 2005 | | | |