2005 | 2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features | Liao, M.H.; Yu, C.Y.; Huang, C.F.; Lin, C.H.; Lee, C.J.; Yu, M.H.; Chang, S.T.; Liang, C.Y.; Lee, C.Y.; Guo, T.H.; Chang, C.C.; Liu, C.W. | Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International | 0 | 0 | |
2009 | An investigation about the limitation of strained-Si technology | Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO | International Symposium on VLSI Technology, Systems, and Applications | | | |