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Issue DateTitleAuthor(s)TypescopusWOSFulltext/Archive link
11990Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo conference paper
21994Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo ; Wu, Y. L.; Kuo, K. M.conference paper
31992Test Reduction in Scan-Designed CircuitsLai, W.; Kung, C.; 林呈祥; Lin, Chen-Shangconference paper