Results 1-20 of 43 (Search time: 0.015 seconds).

Issue DateTitleAuthor(s)TypescopusWOSFulltext/Archive link
11997A Ga 2 O 3 passivation technique compatible with GaAs device processingMINGHWEI HONG journal article
21984An AlGaAs-GaAs dual-wavelength photodetector with 500 ? resolutionLee, S.C.; Lin, H.H.; Chiou, Y.L.journal article
32008Analysis of STI-induced mechanical stress-related Kink effect of 40 nm PD SOI NMOS devices biased in saturation regionJAMES-B KUO journal article43
42000Analytic modeling of the subthreshold behavior in MOSFETLiu, C. W.; Hsieh, T. X.; LiuCW journal article
52000Analytic modeling of the subthreshold behavior in MOSFETCHEE-WEE LIU journal article33
62004Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturationChang, S. T.; Liu, C. W.; Lu, S. C.journal article
72004Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturationCHEE-WEE LIU journal article56
81996C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applicationsMINGHWEI HONG journal article
92014Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substratesJENN-GWO HWU journal article44
101997Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxideMINGHWEI HONG journal article
111998Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectricsMINGHWEI HONG journal article
122015Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrateJIAN-JANG HUANG journal article1817
132010Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layersMINGHWEI HONG journal article
142004Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodizationJENN-GWO HWU journal article98
152001Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfacesMINGHWEI HONG journal article
162015Enhanced light emission from Ge by GeO<inf>2</inf> micro hemispheresCHEE-WEE LIU journal article00
172000Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealingJENN-GWO HWU journal article53
182003Examination of LiNbO3/nitride heterostructuresYUH-RENN WU journal article1816
191999Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidationJENN-GWO HWU journal article54
202003Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrumCHIEH-HSIUNG KUAN journal article65