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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
120052 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced featuresLiao, M.H.; CHEE-WEE LIU et al. International Electron Devices Meeting, IEDM 
22009A comprehensive study of Ge<inf>1-x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakageLuo, G.-L.; CHEE-WEE LIU et al. International Electron Devices Meeting, IEDM 30
32016Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technologyLee, Y.-J.; JIUN-YUN LI et al. International Electron Devices Meeting, IEDM 60
42007Electrically pumped Ge laser at room temperatureCheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H.; Hung, T.A.; Liu, C.W.; CHEE-WEE LIU International Electron Devices Meeting, IEDM 90
52002High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivityHsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU International Electron Devices Meeting, IEDM 
62002High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm)Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU International Electron Devices Meeting, IEDM 
72010High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain responseFu, Y.-C.; CHEE-WEE LIU et al. International Electron Devices Meeting, IEDM 70
82000High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetectorTang, S.-F.; Lin, S.-Y.; Lee, S.-C.; Kuan, C.H.; Cherng, Y.-T.; CHIEH-HSIUNG KUAN International Electron Devices Meeting, IEDM 
92012Hybrid CIS/Si near-IR sensor and 16% PV energy-harvesting technologyShen, C.-H.; CHEE-WEE LIU et al. International Electron Devices Meeting, IEDM 00
102015In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I&lt;inf&gt;on&lt;/inf&gt; = 828 μa/μm, I&lt;inf&gt;on&lt;/inf&gt;/I&lt;inf&gt;off&lt;/inf&gt; ? 1×10&lt;sup&gt;5&lt;/sup&gt;, DIBL= 16-54 mV/V, and 1.4X external strain enhancementWong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU International Electron Devices Meeting, IEDM 60
112012Interfacial layer-free ZrO<inf>2</inf> on Ge with 0.39-nm EOT, κ?43, ?2×10<sup>-3</sup> A/cm<sup>2</sup> gate leakage, SS =85 mV/dec, I<inf>on</inf>/I<inf>off</inf> =6×10<sup>5</sup>, and high strain responseLin, C.-M.; CHEE-WEE LIU et al. International Electron Devices Meeting, IEDM 120
121998Investigation of the space charge effect in the quantum well infrared photodetectorKuan, C.H.; Hsu, Y.F.; Hsu, M.C.; CHIEH-HSIUNG KUAN International Electron Devices Meeting, IEDM 
131999Light emission and detection by metal oxide silicon tunneling diodesLiu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHEE-WEE LIU International Electron Devices Meeting, IEDM 
141999Light emission and detection by metal oxide silicon tunneling diodesLiu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHING-FUH LIN International Electron Devices Meeting, IEDM 
152011Nearly defect-free Ge gate-all-around FETs on Si substratesHsu, S.-H.; CHEE-WEE LIU et al. International Electron Devices Meeting, IEDM 140
162004Package-strain-enhanced device and circuit performanceMaikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU International Electron Devices Meeting, IEDM 
172012Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I <inf>on</inf> and nearly defect-free channelsHsu, S.-H.; CHEE-WEE LIUet al. International Electron Devices Meeting, IEDM 60