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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12014Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap LayerLiang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG IEEE Transactions on Electron Devices 9180