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Results 1-20 of 45 (Search time: 0.024 seconds).

Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12006An analysis of base bias current and intrinsic base resistance effects on InP-InGaAs, InGaP-GaAs, and SiGe heterojunction bipolar transistorsLin, Y.-S.; Chen, C.-C.; Lu, S.-S.; SHEY-SHI LU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 00
22001Application of anodization to reoxidize silicon nitride filmLin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
31992Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitorsLin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 11
42007Characterization and modeling of pattern ground shield and silicon-substrate effects on radio-frequency monolithic bifilar transformers for ultra-wide band radio-frequency integrated circuit applicationsSHEY-SHI LU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 33
52001Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperaturesLin, G.-R.; Liu, T.-A.; Pan, C.-L.; GONG-RU LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
61992Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay methodLin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 23
72002Effect of mechanical stress on characteristics of silicon thermal oxidesYen, J.-Y.; Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
82003/4/14Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum WellsLin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Lin, Ching-Fuh Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
92006Electroosmotic flow driven by DC and AC electric fields in curved microchannelsJIA-KUN CHEN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 1414
102005Formation mechanism and characterization of Ag-metal chelate polymer prepared by a wet chemical processHuang, C.-J.; Lin, J.-J.; Shieu, F.-S.; JIANG-JEN LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 129
112004Growth of nanopucks on Pb quantum islandsLin, H.Y.; Chiu, Y.P.; Chang, C.S.; Chen, Y.W.; Tsong, T.T.; YA-PING CHIU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 11
122004Harmonie injection-locking behavior of frequency-detuned optical pulse in erbium-doped fiber laserLin, G.-R.; Liao, Y.-S.; Wu, J.-R.; GONG-RU LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 11
132006Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect TransistorsLin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
141999Hydrothermal synthesis and dielectric properties of lead nickel niobate ceramicsLu C.-H. ; Hwang W.-J.Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 20
151998Imaging photo-induced reaction of poly(p-phenylenevinylene) thin films by a spectrally resolved laser scanning microscopeKao, F.-J.; Chou, S.-Y.; Huang, S.-L.; Chen, S.-A.; Chuang, K.-R.; Fann, W.; SHENG-LUNG HUANG Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
161996InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization propertiesBimberg, D.; MING-HUA MAOet al. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
171997InAs/GaAs quantum dots grown by metalorganic chemical vapor depositionHeinrichsdorff, F.; Krost, A.; Kirstaedter, N.; Mao, M.-H.; Grundmann, M.; Bimberg, D.; Kosogov, A.O.; Werner, P.; MING-HUA MAO Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
182006InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layerC. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 22
192001Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by Plasma-assisted molecular beam epitaxyLin, G.-R.; Liu, T.-A.; Pan, C.-L.; GONG-RU LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
202001Laser-induced activation of p-type GaN with the second harmonics of a Nd:YAG laserCheng, Y.-C.; Liao, C.-C.; Feng, S.-W.; Yang, C.-C.; Lin, Y.-S.; Kung-Jeng, M.; Chou, C.-C.; Lee, C.-M.; Chyi, J.-I.; CHIH-CHUNG YANG Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers