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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12008Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectricsChang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG 2008 Device Research Conference