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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12007Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
22007Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5mC. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
32007Effect of thermal annealing on the optical properties of GaAsSbNY. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
42006Effects of thermal annealing on the energy gap of GaAsSbNY. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
52007Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam EpitaxyL. C. Chou; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
62006Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxyT. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN International electron devices and materials symposia 
72007Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressorsY. R. Lin; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia