Publication
(All)

Results 1-3 of 3 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12005Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stressYang, I.-J.; Peng, C.-Y.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU 2005 International Semiconductor Device Research Symposium 
22005Novel schottky barrier strained germanium PMOSPeng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU 2005 International Semiconductor Device Research Symposium 
32005Novel schottky barrier strained germanium PMOSPeng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W.2005 International Semiconductor Device Research Symposium 2