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12005CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement EffectsY. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO HKEDSSC 00
22005Gate-Misalignment Related Capacitance Behavior of a 100nm DG SOI MOS Devices with N+/p+ Top/Bottom GateJ. B. KUo; C. H. Hsu; C. P. Yang; JAMES-B KUO HKEDSSC