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12003Characterization and modeling of the anomalous dip in scattering parameter S<inf>11</inf> of InGaP/GaAs HBTsSHEY-SHI LU IEEE International Symposium on Compound Semiconductors, Proceedings 00
22003DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In<inf>0.51</inf>Ga<inf>0.49</inf>P/In<inf>0.15</inf>Ga<inf>0.85</inf>/As/GaAs power pHEMTsSHEY-SHI LU IEEE International Symposium on Compound Semiconductors, Proceedings 00