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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12003Band Gap Reduction in InAsN AlloysD. K. Shih; H. H. Lin; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN Japanese Journal of Applied Physicsic 6664
22002Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layersC. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN Japanese Journal of Applied Physicsic 00