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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
11999Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxidesKwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur 
22000Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodesHong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur 
32000Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositionsHong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur