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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
11989Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesHwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU Applied Physics A Solids and Surfaces 00
21986Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature techniqueHwu, J.G.; Wang, W.S.; JENN-GWO HWU Applied Physics A Solids and Surfaces 109
31988The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambientHwu, J.-G.; Fu, S.-L.; JENN-GWO HWU Applied Physics A Solids and Surfaces 88