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	Issue Date	Title	Author(s)	Source	scopus	WOS	Fulltext/Archive link
1	2007	Modeling the Gate Tunneling Current Effects of Sub-100nm NMOS Devices with an Ultra-thin (1nm) Gate Oxide	J. B. Kuo; JAMES-B KUO	International Electron devices Semiconductor Technology Conf (IEDST)	1	0