高效率發光二極體之製作研發(1/2)

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Project title/計畫英文名

高效率發光二極體之製作研發(1/2)

Project Number/計畫編號

97-2622-E-002-011-CC1

Translated Name/計畫中文名

高效率發光二極體之製作研發(1/2)

Project Principal Investigator/計畫主持人

CHIH-CHUNG YANG

Funding Organization

National Science and Technology Council

Start date/計畫起

01-10-2008

Expected Completion/計畫迄

31-07-2009

摘要：為了固態照明、顯示及液晶顯示背光源應用，氮化銦鎵/氮化鎵量子井發光二極體商機無限。發光二極體之發光效率決定於內部量子效率及萃光效率。本產學計畫與晶元光電公司合作，提出三個相關聯研發課題，運用新穎奈米材料及奈米光電技術，提昇發光二極體效率。首先，由於氮化銦鎵/氮化鎵量子井內存在載子侷限效果及量子侷限史塔克效應，傳統以變溫光激發螢光強度變化量測所獲得之內部量子效率不可靠。為求正確評估發光二極體長晶品質，我們將建構一套評估發光二極體長晶品質之標準流程。其次，為降低氮化鎵內之線性差排密度，提昇氮化鎵樣板之品質，我們以有機金屬氣相沉積技術生長圖案化之氮化鎵奈米柱，求零線性差排密度之品質，再進行接合生長，預期可製作低線性差排密度氮化鎵樣板。最後，我們將以表面電漿子與發光量子井耦合，來產生經表面電漿子輻射的發光途徑，從而提高等效的自放光效率及萃光效率。
Abstract: Because of the broad applications of solid-state lighting, display, and liquid-crystal display backlighting, InGaN/GaN quantum-well-based light-emitting diode (LED) has a huge market value. The efficiency development of single-color LED relies on the improvements of internal quantum efficiency and light extraction efficiency. In this project, we cooperate with the Epistar Corporation and propose three related research topics based on novel nano-material and nano-photonics technologies. First, because of the existence of localized energy states and the quantum-confined Stark effect in an InGaN/GaN quantum well, the conventional temperature-dependent photoluminescence measurement for calibrating the internal quantum efficiency is not reliable. For more precisely evaluating the emission quality of an LED material, we will build a standard measurement procedure for the internal quantum efficiency based on the knowledge we built in the past research. Second, we will use the metalorganic chemical vapor deposition technique to grow patterned GaN nanocolumns of almost zero threading dislocation density and then perform coalescence overgrowth for fabricating low-defect-density GaN template. Finally, we will use the coupling effect between surface plasmon and quantum well to create an alternative emission channel through the radiation of surface plasmon and to enhance spontaneous emission and light extraction. The studies on all the proposed research topics in this project are based on our research accomplishments in the past two to eight years.

Keyword(s)

發光二極體
氮化銦鎵/氮化鎵量子井
氮化鎵奈米柱
接合再生長
表面電漿子
內部量子效率
固態照明
light-emitting diode
InGaN/GaN quantum well
GaN nanocolumn
coalescence overgrowth
surface plasmon
internal quantum efficiency
solid-state lighting

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高效率發光二極體之製作研發(1/2)

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