Results 1-170 of 170 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)TypescopusWOSFulltext/Archive link
12019Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristicsChen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO journal article22
22019Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory ApplicationsChen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO journal article65
32019Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputteringYang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO journal article00
42019Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onsetChen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO journal article00
52019Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping ElectrodeChen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO conference paper10
62018Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field SensorsLuong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H. ; Wu, J.-C.; Lai, M.-H.; Chang, C.-R.88
72018The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitorsLien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H.22
82018Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress CyclesM. H.Liao ; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu; Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee
92018Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETsLee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; Liu, C.W.Conference Paper90
102018Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctionsM. H.Liao ; H. Sun; S.-C. Chenh; P.-C. Ling; S.-M. Song
112018Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation ApplicationsLee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S.Conference Paper00
122018Semicond uctor device and method of formation廖洛漢 
132018Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devicesM. H.Liao ; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee
142018Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMTChen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H.00
152018Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100)Liao, M.H.; MING-HAN LIAO others00
162018Ferroelectric HfZrO&amp;#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO journal article12
172018Thickness dependence of electrical conductivity and thermo-electric power of Bi<inf>2.0</inf>Te<inf>2.7</inf>Se<inf>0.3</inf>/Bi<inf>0.4</inf>Te<inf>3.0</inf>Sb<inf>1.6</inf> thermo-electric devicesLiao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO journal article55
182018Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: ReplyLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO journal article00
192018Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115]Liao, M.H.; MING-HAN LIAO journal article00
202018Ferroelectric HfZrO <sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)Chen, Kuan-Ting; Gu, Siang-Sheng; Wang, Zheng-Ying; Liao, Chun-Yu; Chou, Yu-Chen; Hong, Ruo-Chun; Chen, Shih-Yao; Chen, Hong-Yu; Siang, Gao-Yu; Lo, Chieh; Chen, Pin-Guang; Liao, M.-H.; Li, Kai-Shin; Chang, Shu-Tong; Lee, Min-Hung; MING-HAN LIAO journal article22
212018Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field SensorsM. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang
222017Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors from 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element ModelingLiao, M.-H. ; Hsieh, C.-P.; Lee, C.-C.79
232017In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State ElectronicsM. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee
242017Ferroelectric Al:HfO2 Negative Capacitance FETsM. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu
252017Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T.Conference Paper00
262017The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modelingM. H.Liao ; C.-P. Hsieh; C.-C. Lee
272017Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETsLee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W.470
282017Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structuresM. H.Liao ; H.-I. Huang; C.-C. Chuang
292017The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.M. H.Liao ; H.-W. Hsuh; C.-C. Lee
302017The achievement of the super short channel control in the magnetic Ge nFinFETs with the negative capacitance effectM. H.Liao ; H.-Y. Huang; F.-A. Tsai; C.-C. Chuang; M.-H. Hsu; C.-C. Lee; M.-H. Lee; C. Lien; C.-F. Hsieh; T.-C. Wu; H.-S. Wu; C.-W. Yao
312017The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltagesM. H.Liao ; C.-P. Hsieh; C.-C. Lee
322017Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structuresLiao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO journal article45
332017In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contactChen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO journal article44
342017In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contactChen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO others44
352017The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channelLee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO journal article11
362017The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effectLiao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO journal article00
372017The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltagesLiao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO journal article00
382016PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenograftsChiu, C.-H.; Li, I.-H.; Weng, S.-J.; Huang, Y.-S.; Wu, S.-C.; Chou, T.-K.; Huang, W.-S.; Liao, M.-H. ; Shiue, C.-Y.; Cheng, C.-Y.; Ma, K.-H.43
392016MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the SameM.H.Liao ; M.Hongh
402016Narrow channel width effect modificati on in a shallow trench isolation deviceM. H.Liao ; T.L. Lee
412016Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive RelationshipsM. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
422016SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT IONM. H.Liao 
432016The investigation of the diameter dimension effect on the Si nano-tube transistorsM. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. Wang
442016Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressorsLee, C.-C.; Cheng, S.-W.; Hsieh, C.-P.; Liao, M.-H. ; Guo, Y.-H.Conference Paper00
452016Isolation Region Implant and StructureM. H.Liao ; T.L. Lee
462016Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressorsLee, C.-C.; Hsieh, C.-P.; Liao, M.-H. ; Cheng, S.-W.; Guo, Y.-H.Conference Paper00
472016Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETsM. H.Liao ; M. H. Lee; S.-T. Fan; C.-H. Tang; P.-G. Chen; Y.-C. Chou; H.-H. Chen; J.-Y.Kuo; M.-J. Xie; S.-N. Liu; C.-A. Jong; K.-S. Li; M.-C. Chen; C.W. Liu
482016MAGNET IC CAPACIT OR STRUCT URESM.H.Liao ; C.Hsieh; C.Chen
492016STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based StressorsM. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
502016STI stress modulation with additional implantati on and natural pad sin maskM. H.Liao ; T.L. Lee; L.-Y.Yeh; M.S.Liang
512016Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stackLiu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H.115
522016Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressorsHsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO journal article00
532016Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationshipsLee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO journal article32
542016Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressorsLee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; Guo, Yu Huan; MING-HAN LIAO journal article00
552015Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFFM. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
562015The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate schemeM. H.Liao ; P.-G. Chen
572015The demonstra tion of UltraHigh Dielectric Constant with the propelling of the magnetic complex thin film廖洛漢 ; 洪銘輝
582015Sub-60mV-Swing Negative-Capacitance FinFET without HysteresisM. H.Liao ; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu1200
592015The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulatorsM. H.Liao ; C. Lien
602015The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETsM. H.Liao ; P.-G. Chen
612015The demonstration of the novel nanotube Si device with the promising device performance behaviorM. H.Liao ; C. P. Hsieh
622015利用拉曼光譜檢測半導體缺陷技術廖洛漢 ; 陳畤華; 謝卓帆
632015The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETsM. H.Liao ; P.-G. Chen21
642015~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT processM. H.Liao ; P.-G. Chen; C. P. Hsieh
652015Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C.00
662015Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off &lt;0.2V, and hysteresis-free strategiesLee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C.480
672015A non-linear analytic stress model for the analysis on the stress interaction between TSVsLiao, M.-H. ; Kao, S.-C.; Huang, S.-J.Article00
682015Narrow tube FET structure for super short channel control廖洛漢 ; 洪銘輝
692015The demonstration of the Si nano-tube device with the promising short channel controlM. H.Liao ; P.-G. Chen
702015The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gateM. H.Liao ; S.-C. Huangn; C. P. Hsieh
712015The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistorM. H.Liao ; S.-C. Huang
722015The demonstration of a D-SMT stressor on Ge planer n-MOSFETsM. H.Liao ; P.-G. Chen
732015磁場感測裝置廖洛漢 
742015The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulatorsLiao, M.-H.; Lien, C.; MING-HAN LIAO journal article65
752015Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117))Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO others00
762015Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C.; MING-HAN LIAO others00
772015Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique” [AIP Advances 3(7), 072117 (2013)]Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO journal article00
782015The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate schemeLiao, M.-H.; Huang, S.C.; MING-HAN LIAO journal article42
792015A non-linear analytic stress model for the analysis on the stress interaction between TSVsLiao, M.-H.; Kao, S.-C.; Huang, S.-J.; MING-HAN LIAO journal article00
802015Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO journal article00
812014High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M.Conference Paper10
822014The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack designM. H.Liao ; S.-C. Huang
832014The demonstration of D-SMT stressor on Si and Ge n-FinFETsLiao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y.60
842014Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistorsM. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang
852014Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopyHsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. 00
862014The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme designLiao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C.30
872014Analyzing Si-SiGe thin-film solar cell by simulation and calculationHsieh, C.-F.; Li, Y.-T.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. Conference Paper00
882014Stress and curvature of periodic trench structures on Sapphire substrate with GaN filmHsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. 00
892014Periodic nanostructured thin-film solar cellsHsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. 00
902014The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopyHsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. 00
912014Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistorsLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO journal article3126
922013Solar cell composed of periodic nano-structure and SiGe/Si thin filmHsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. 00
932013The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong
942013Nonlinear analytic model for the strain field induced by thermal copper filled TSVsM. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang
952013Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions studyM. H.Liao 
962013The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICsM. H.Liao ; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong
972013The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D chamber modeling and experimental visual techniqueLiao, M.-H. ; Chen, C.-H.; Kao, S.-C.; Huang, M.-C.00
982013Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopyM. H.Liao ; C.-H. Chen
992013Residual stress of curvature sapphire substrate with GaN film released by the application of trench structuresLiao, M.-H. ; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; Hsieh, C.-F.00
1002013CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual techniqueM. H.Liao ; C.-H. Chen; S.-C. Kao; M.-C. Huang
1012013Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistorsLiao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C.01
1022013The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)Liao, M.-H. ; Chen, C.-H.; Lee, J.J.; Chen, K.C.; Liang, J.H.00
1032013Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free processM. H.Liao ; P.-G. Chen
1042013Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure DesignM. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang
1052013Relaxation of residual stress in bent GaN film on sapphire substrate by laser treatment with an optimized surface structure designChen, C.H.; Liao, M.-H. ; Chang, L.C.; Kao, S.C.; Yu, M.-Y.; Liu, G.-H.; Huang, M.-C.00
1062013The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuitsLiao, M.H.; MING-HAN LIAO journal article77
1072013Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In<inf>0.53</inf>Ga <inf>0.47</inf>As field-effect transistorsLiao, M.-H.; Chen, P.-K.; MING-HAN LIAO journal article33
1082013Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopyLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO journal article00
1092013Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN filmChen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO journal article00
1102013Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free processLiao, M.-H.; Chan, P.-G.; MING-HAN LIAO journal article11
1112013The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuitsLiao, M.-H.; MING-HAN LIAO journal article22
1122013RETRACTED: The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress designLiao, M.H.; MING-HAN LIAO journal article55
1132013Effect of hydrogen participation on the improvement in electrical characteristics of HfO<inf>2</inf> gate dielectrics by post-deposition remote N<inf>2</inf>, N<inf>2</inf>/H<inf>2</inf>, and NH<inf>3</inf> plasma treatmentsHuang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MING-HAN LIAO journal article75
1142013The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress designLiao, M.H.; MING-HAN LIAO journal article55
1152013Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistanceLiao, M.-H.; Chang, L.C.; MING-HAN LIAO journal article86
1162013The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO journal article21
1172013The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H. ; Chen, C.-H.; Kao, S.-C.11
1182012Additional nitrogen ion-implantation treatment in STI to relax the intrinsic compressive stress for n-MOSFETsLiao, M.-H. ; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C.Article76
1192012A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivationM. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng
1202012Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatmentsM. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen
1212012The optimization of SiGe hetero-structure thin-film solar cell by the theoretical calculation and quantitative analysisLiao, M.-H. ; Chen, Y.-Y.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Hsieh, C.-F.00
1222012The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extractionLiao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH journal article137
1232012The systematic study and simulation modeling on nano-level dislocation edge stress effectsLiao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH journal article94
1242012A novel stress design for the type-II hetero-junction solar cell with superior performanceLiao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH journal article64
1252012Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETsLiao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; LiaoMH journal article76
1262011Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelizationLiao, M.H. ; Chang, L.C.Conference Paper00
1272011High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effectHan Liao, M.; MING-HAN LIAO journal article34
1282011The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysisLiao, M.H.; Chen, C.H.; MING-HAN LIAO journal article1816
1292011Si/SiGe hetero-junction solar cell with optimization design and theoretical analysisChang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO conference paper2624
1302011Si/SiGe hetero-junction solar cell with optimization design and theoretical analysisChang, S. T.; Liao, M. H.; Lin, W.-K.; MING-HAN LIAO journal article2624
1312011The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacksChen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO journal article129
1322010The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysisLiao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T.00
1332010Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stressChen, C.-H.; Liao, M.H.; Chiu, F.-C.; Hwang, H.-L.; MING-HAN LIAO journal article00
1342010Strain engineering of nanoscale Si MOS devicesHuang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO journal article44
1352010High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effectLiao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO conference paper00
1362009The dependence of the performance of strained NMOSFETs on channel widthYeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; Liang, M.S.33
1372009Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringChang, Shu-Tong; Liao, Ming-Han; Lee, Chang-Chun; Huang, Jacky; Wang, Wei-Ching; Hsieh, Bing-Fong; MING-HAN LIAO journal article20
1382009Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringChang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; Hsieh, B.-F.; MING-HAN LIAO conference paper20
1392009An investigation about the limitation of strained-Si technologyLiao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO conference paper10
1402009The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronicsLee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO conference paper00
1412008Blue electroluminescence from metal/oxide/6H-SiC tunneling diodesJan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; Liu, C.W.Article22
1422008Superior n-MOSFET performance by optimal stress designLiao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; Liang, M.-S.1512
1432008SiGe/Si quantum-dot infrared photodetectors with δ dopingLin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; Liu, C.W.56
1442008Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistorLiao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO journal article1311
1452008Optimal stress design in p-MOSFET with superior performanceLiao, M.H.; MING-HAN LIAO journal article108
1462008Blue electroluminescence from metal/oxide/6H-SiC tunneling diodesJan, S.-R.; Cheng, T.-H.; Hung, T.-A.; Kuo, P.-S.; Liao, M.H.; Deng, Y.; Liu, C.W.; MING-HAN LIAO journal article22
14720082.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctionsLiao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO journal article2119
1482008Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectorsCheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; Liu, C.W.; MING-HAN LIAO journal article86
1492007Superior n-MOSFET performance by optimal stress designYang, Y.-J.; Liao, M.H. ; Liu, C.W.Yeh, L., Lee, T.-L., Liang, M.-S.10
1502007Electroluminescence from strained SiGe quantum dot light-emitting diodesCheng, T.-H.; Liao, M.H. ; Liu, C.W.Conference Paper00
1512007Electrically pumped Ge laser at room temperatureCheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; Liu, C.W.Conference Paper90
1522007Blue electroluminescence from metal/oxide/6H-SiC tunneling diodesJan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; Liu, C.W.Conference Paper00
1532007The intermixing and strain effects on electroluminescence of SiGe dotsLiao, M.H.; Lee, C.-H.; Hung, T.A.; Liu, C.W.; MING-HAN LIAO journal article2828
1542007Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer DepositionChen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee journal article2523
1552006Promising a-Si:H TFTs with high mechanical reliability for flexible displayLee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H.100
1562006Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodesLiao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W.Conference Paper0
1572006Strained Pt Schottky diodes on n-type Si and GeLiao, M.H. ; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W.0
1582006Electroluminescence from the Ge quantum dot MOS tunneling diodesLiao, M.H. ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; Liu, C.W.Article2826
1592006The process and optoelectronic characterization of Ge-on-insulatorLin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; Liu, C.W.00
1602006Electroluminescence from the Ge quantum dot MOS tunneling diodesLiao, M.H.; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; Liu, C.W.; MING-HAN LIAO journal article2826
1612006Buckling characteristics of SiGe layers on viscous oxideYu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; Liao, M.H.; Liu, C.W.; MING-HAN LIAO journal article22
1622006Infrared emission from Ge metal-insulator-semiconductor tunneling diodesLiao, M.H.; Cheng, T.-H.; Liu, C.W.; MING-HAN LIAO journal article2829
1632005Novel schottky barrier strained germanium PMOSPeng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W.2
16420052 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced featuresLiao, M.H. ; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W.Conference Paper2
1652005Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layersYu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; Liu, C.W.; MING-HAN LIAO journal article1211
1662005Abnormal hole mobility of biaxial strained SiLiao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; MING-HAN LIAO journal article1820
1672005Electroluminescence from metal/oxide/strained-Si tunneling diodesLiao, M.H.; Chen, M.-J.; Chen, T.C.; Wang, P.-L.; Liu, C.W.; MING-HAN LIAO journal article6141
1682004BICMOS devices under mechanical strainLiu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.Conference Paper4
1692004Package-strain-enhanced device and circuit performanceMaikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.21
1701996Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function methodMa, C.-C.; Liao, M.-H.; MING-HAN LIAO journal article55