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Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12023Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor depositionFeng, Zhe Chuan; HAO-HSIUNG LIN ; Xin, Bin; Tsai, Shi Jane; Saravade, Vishal; Yiin, Jeffrey; Klein, Benjamin; Ferguson, Ian T.Vacuum32
22022 MayBulk InAsN films grown by plasma-assisted gas source molecular beam epitaxyShih, Ding-Kang; Lin, Hao-Hsiung ; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R.IEEE International Conference On Indium Phosphide and Related Materials, 2001.00
32021High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa SidewallsHou W.-C; Shih P.-C; Wu B.B.-R; HAO-HSIUNG LIN ; JIUN-YUN LI IEEE Transactions on Electron Devices21
42021Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substratesWang B; HAO-HSIUNG LIN Superlattices and Microstructures76
52021Assessment of intrinsic and doped defects in Bridgman grown Cd1-xZnxTe alloysTalwar D.N; Becla P; Lin H.-H; Chuan Feng Z.; HAO-HSIUNG LIN Materials Science and Engineering B: Solid-State Materials for Advanced Technology33
62020Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayersTalwar D.N; Lin H.-H; Chuan Feng Z.; HAO-HSIUNG LIN Materials Science and Engineering B: Solid-State Materials for Advanced Technology87
72020A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning ExcitationChu, C.-H.; Mao, M.-H.; Lin, Y.-R.; MING-HUA MAO ; HAO-HSIUNG LIN Scientific Reports23
82020Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayersTalwar D.N; Lin H.-H; Feng Z.C.; HAO-HSIUNG LIN Materials Chemistry and Physics22
92019Surface/structural characteristics and band alignments of thin Ga <inf>2</inf> O <inf>3</inf> films grown on sapphire by pulse laser depositionYang, H.; Qian, Y.; Zhang, C.; Wuu, D.-S.; Talwar, D.N.; Lin, H.-H.; Lee, J.-F.; Wan, L.; He, K.; Feng, Z.C.; HAO-HSIUNG LIN Applied Surface Science5450
102019A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire DevicesChu, C.-H.; Mao, M.-H.; Yang, C.-W.; MING-HUA MAO ; HAO-HSIUNG LIN Scientific reports44
112019Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor depositionLin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu; HAO-HSIUNG LIN Journal of Crystal Growth44
122018Selective area growth of InAs nanowires from SiO<inf>2</inf>/Si(1?1?1) templates direct-written by focused helium ion beam technologyYang, C.-W.; Chen, W.-C.; Chou, C.; Lin, H.-H.; HAO-HSIUNG LIN Journal of Crystal Growth54
132018First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAs<inf>x</inf>P<inf>y</inf>Sb<inf>1-x-y</inf> systemRobouch, B.V.; Lin, H.-H.; Valeev, R.G.; Trigub, A.L.; Omar, J.; Kisiel, A.; Marcelli, A.; HAO-HSIUNG LIN Journal of Alloys and Compounds22
142018A single nano-void precisely positioned in SiO<inf>2</inf>/Si substrate by focused helium ion beam techniqueYang, C.-W.; Chou, C.; Chen, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN Vacuum11
152018Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line methodXinyou Liu; Yen-Cheng Ko; Chieh Chou; Hao-Hsiung Lin; HAO-HSIUNG LIN International Electron Devices & Materials Symposium IEDMS2018
162018Optical and structural characteristics of Bridgman grown cubic Zn<inf>1-x</inf>Mn<inf>x</inf>Te alloysTalwar, D.N.; Becla, P.; Lin, H.-H.; Feng, Z.C.; HAO-HSIUNG LIN Materials Chemistry and Physics11
172018Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetectorHao-Kai Hsieh; Chieh Chou; Hao-Hsiung Lin; Jiunn-Jye Luo; Shao-Yi Li; HAO-HSIUNG LIN 2018 7th International Symposium on Next Generation Electronics10
182018Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilmsTalwar, D.N.; Wan, L.; Tin, C.-C.; Feng, Z.C.; HAO-HSIUNG LIN Applied Surface Science65
192018Reactive-Ion Etching of Bismuth Thin Film Using CHF3Yen-Cheng Ko; Ding-Lun Wu; Che-Wei Yang; Hao-Hsiung Lin; HAO-HSIUNG LIN International Electron Devices & Materials Symposium IEDMS2018
202018Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, rutherford backscattering, grazing incidence X-ray diffraction and Variable Angle Spectroscopic EllipsometryLuo, X.; Li, Y.; Yang, H.; Liang, Y.; He, K.; Sun, W.; Yao, S.; Lu, X.; Wan, L.; Feng, Z.; HAO-HSIUNG LIN Crystals5254
212018Synchrotron radiation X-Ray absorption spectroscopy and spectroscopic ellipsometry studies of insb thin films on GaAs grown by metalorganic chemical vapor depositionQian, Y.; Liang, Y.; Luo, X.; He, K.; Sun, W.; Talwar, D.N.; Chan, T.-S.; Ferguson, I.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN Advances in Materials Science and Engineering56
222017One-dimensional nanostructure growth on graphene and devices thereofHAO-HSIUNG LIN 
232017Growth direction control of InAs nanowires on (0 0 1) Si substrate with SiO<inf>2</inf>/Si nano-trenchChen, W.-C.; Chen, L.-H.; Lin, Y.-T.; HAO-HSIUNG LIN Journal of Crystal Growth00
242017Partially polycrystalline GaN1-xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gapWu, H.-M.; Lin, K.-I.; Liu, Y.-X.; Cheng, Y.-C.; HAO-HSIUNG LIN Japanese Journal of Applied Physics11
252016X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVDXin, J.; Chang, C.M.; Hsueh, C.-H.; Lee, J.-F.; Chen, J.-M.; Lin, H.-H.; Lu, N.; Ferguson, I.T.; Guan, Y.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN 2016 5th International Symposium on Next-Generation Electronics, ISNE 201610
262016Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaPWu, H.-M.; Tsai, S.-J.; Ho, H.-I.; Lin, H.-H.; HAO-HSIUNG LIN Journal of Applied Physics33
272016Structure of GaAsN alloy within miscibility gapWu, H.-M.; Lin, K.-I.; Lin, H.-H.; HAO-HSIUNG LIN 2016 5th International Symposium on Next-Generation Electronics, ISNE 201600
282016Indium and nitrogen K-edge X-ray absorption spectroscopy of In <inf>x</inf> Ga <inf>1-x</inf> NLi, X.; Chang, C.M.; Hsueh, C.-H.; Lee, Z.-F.; Chen, J.-M.; Lin, H.-H.; Wang, X.; Dietz, N.; Guan, Y.-J.; Feng, Z.C.; HAO-HSIUNG LIN 2016 5th International Symposium on Next-Generation Electronics, ISNE 201600
292016Raman scattering in InP <inf>1-x</inf> Sb <inf>x</inf> alloys grown on InAs substrate by gas source MBEChang, C.-M.; Tsai, C.-Y.; Lin, H.-H.; HAO-HSIUNG LIN 2016 5th International Symposium on Next-Generation Electronics, ISNE 201600
302016Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxyYang, C.-W.; Chen, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN 2016 5th International Symposium on Next-Generation Electronics, ISNE 201600
312016Structural properties of InAs nanowires on (001) SiChen, W.-C.; Chen, L.-H.; Lin, Y.-T.; Lin, H.-H.; HAO-HSIUNG LIN 2016 5th International Symposium on Next-Generation Electronics, ISNE 201600
322016Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxyXin, B.; Zhang, Y.-M.; Wu, H.-M.; Feng, Z.C.; Lin, H.-H.; Jia, R.-X.; HAO-HSIUNG LIN Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films42
332015Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniquesH. P. Hsu; J. D. Wu; Y. J. Lin; Y. S. Huang; Y. R. Lin; HAO-HSIUNG LIN Japanese Journal of Applied Physics 11
342015A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVDXin, B.; Jia, R.-X.; Hu, J.-C.; Tsai, C.-Y.; Lin, H.-H.; Zhang, Y.-M.; HAO-HSIUNG LIN Applied Surface Science1914
352015Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diodeYang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN Microelectronics Journal00
362015Effect of Focused Ion Beam Imaging on the Crystallinity of InAsChen, W.-C.; Huang, T.-H.; Chen, K.-C.; Lin, H.-H.; HAO-HSIUNG LIN Microscopy and Microanalysis00
372015InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μmLin, Y.-C.; Mao, M.-H.; Wu, C.-J.; Lin, H.-H.; MING-HUA MAO ; HAO-HSIUNG LIN Optics Letters 33
382014Photoluminescence and Raman scattering of degenerate InNF. W. Pranoto,; C. Y. Tsai,; Y. C. Liao,; L. C. Chen,; K. H. Chen,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN OPTIC 2014, optics and photonics Taiwan, international conference 2014 
392014Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layerT. H. Huang,; W. C. Chen,; K. C. Chen,; H. H. Lin,; HAO-HSIUNG LIN OPTIC 2014, optics and photonics Taiwan, international conference 2014 
402014Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrateC. Y. Tsai,; B. Xin,; Z. C. Feng,; Y. M. Zhang,; R. X. Jia,; H. H. Lin,; HAO-HSIUNG LIN OPTIC 2014, optics and photonics Taiwan, international conference 2014 
412014X-ray absorption near edge structure of silicon in indium arsenideM. C. Liu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN OPTIC 2014, optics and photonics Taiwan, international conference 2014 
422014Effect of focued ion beam imaging process on the crystallinity of InAsT. H. Huang; W. C. Chen; K. C. Chen; H. H. Lin; HAO-HSIUNG LIN IEDMS 2014, international electron devices and materials symposium 
432014Study of twin defects in (111)B GaAsSb by X-ray diffractionS. C. Chen,; Y. H. Lin,; H. H. Lin,; HAO-HSIUNG LIN IEDMS 2014, international electron devices and materials symposium 
442014Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavityY. C. Lin,; M. H. Mao,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN MIOMD 2014 infrared optoelectronics: materials and devices 
452014Band discontinuity in InAsPSb alloy systemC. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN MIOMD 2014 infrared optoelectronics: materials and devices 
462014Structural properties of GaAsSb grown on (111)B GaAsY. H. Lin,; S. C. Chen,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN 21th Symposium on nano device technology 
472014Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structureC. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN 21th Symposium on nano device technology 
482014Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopyH. P. Hsu; P. H. Wu; J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; K. K. Tiong; HAO-HSIUNG LIN Japanese Journal of Applied Physics 00
492014Ordering InGaP epilayer grown on Ge substrateH. M. Wu,; S. J. Tsai,; Y. C. Chang,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN Thin Solid Films 54
502014All-optical switching in a GaAs microdisk resonatorLin, Y.-C.; Mao, M.-H.; Lin, Y.-R.; Lin, H.-H.; Lin, C.-A.; MING-HUA MAO ; LON A. WANG ; HAO-HSIUNG LIN 2014 IEEE Photonics Conference, IPC 201400
512014All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber couplingLin, Y.-C.; Mao, M.-H.; Lin, Y.-R.; Lin, H.-H.; Lin, C.-A.; MING-HUA MAO ; HAO-HSIUNG LIN ; LON A. WANG Optics Letters1514
522013Properties of Variable Al Content of AlGaN Layers Grown by MOCVDC. X. Wang,; F. D. Li,; S. C. Wang,; M. Zhu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN OPTIC 2013, optics and photonics Taiwan, international conference 2013 
532013Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporationK. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN Applied Physics Express 1714
542013Raman spectroscopy of GaAsPSb alloysC. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN IEDMS 2013, international electron devices and materials symposium 
552013Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting DiodesC. X. Wang,; Y. T. He,; M. T. Niu,; J. Y. Yao,; E. Jones,; Z. R. Qiu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN IEDMS 2013, international electron devices and materials symposium 
562013Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scatteringB. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN International electron devices and materials symposium 
572013Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrateH. M. Wu,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN TACT 2013 international thin films conference 
582013Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAsY. R. Chen,; H. H. Lin; HAO-HSIUNG LIN 40th international symposium on compound semiconductors (ISCS 2013) 
592013GaAsPSb and its application to heterojunction bipolar transistorsY. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN 40th international symposium on compound semiconductors (ISCS 2013) 
602013Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructureJ. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN Journal of Luminescence 55
612013Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)D. N. Talwar,; T. R. Yang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN Applied Physics Letters 01
622013Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxyY. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN Journal of Physics D: Applied Physics 99
632013Short range structure of dilute nitride GaAsSbNH. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN Physics and Mechanics of New Materials and Their Applications 0
642013Short range structure of dilute nitride GaAsSbNLin, H.-H.; Chiou, C.-L.; Lin, Y.-T.; Ma, T.-C.; Wu, J.-S.; Feng, Z.-C.; HAO-HSIUNG LIN Physics and Mechanics of New Materials and Their Applications0
652012Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAsY. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN Applied Physics Letters 
662012A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cellsH. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN International electron devices and materials symposium 
672012Slanted InAs nanowires gorwn by GSMBEW. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN OPTIC 2012, optics and photonics Taiwan, international conference 2012 
682012Structural properties of InAs nanowires grown by GSMBEW. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN IEDMS 2012, international electron devices and materials symposium 
692012Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solutionS. H. Li; C. J. Wu; H. H. Lin; HAO-HSIUNG LIN IEDMS 2012, international electron devices and materials symposium 
702012Defects probing by temperature dependence Raman scattering of GaAsSbNJ. Wu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN IEDMS 2012, international electron devices and materials symposium 
712012Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopyC. L. Chiou,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN OPTIC 2012
722012Sb-based zincblende alloys with strong structural disorderH. H. Lin; HAO-HSIUNG LIN Indo-Taiwan workshop on nanodevices 
732012Electron transport in a GaPSb filmS. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG ; HAO-HSIUNG LIN Nanoscale Research Letters 55
742012Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAsC. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN ; CHIH-CHUNG YANG Applied Physics Letters 88
752012Short range structure of dilute nitride GaAsSbNH. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications 0
762012MBE growth of InAs nanowires on SiL. H. Chen,; Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN 2012 Taiwan MBE Conference 
772012Structural properties of GaAsSb grown on GaAsY. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN 2012 Taiwan MBE Conference 
782012Study on the lattice structure of InAsPSb grown on GaAsG. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN 2012 Taiwan MBE Conference 
792012Study on the structural properties of InP0.52Sb0.48 on GaAsC. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN 2012 Taiwan MBE Conference 
802012InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junctionY. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN IEEE Electron Device Letters 44
812012Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxyY. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN Thin solid film 34
822012Evidence of nitrogen reorganization in GaAsSbN alloysH. P. Hsu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN Japanese Journal of Applied Physics. 77
832012Short channel effects on gallium nitride/gallium oxide nanowire transistorsYu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO ; HAO-HSIUNG LIN ; LUNG-HAN PENG ; YUH-RENN WU Applied Physics Letters 2019
842012Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor depositionLi, L.; Hong-Liao, C.-J.; Huang, Y.Z.; Chen, C.; Yao, S.; Qiu, Z.; Lin, H.H.; Ferguson, I.T.; Feng, Z.C.; HAO-HSIUNG LIN Proceedings of SPIE - The International Society for Optical Engineering00
852012Structural and electronic properties of GaAs<inf>0.64</inf>P <inf>0.19</inf>Sb<inf>0.17</inf> on GaAsChin, Y.-C.; Chen, J.-Y.; Chen, B.-H.; Tsai, H.-S.; Huang, Y.-S.; Lin, H.-H.; HAO-HSIUNG LIN Applied Physics Letters11
862011X-ray absorption find structures of InPSb alloysC. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN International photonics conference 2011 (IPC2011) 
872011Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxyC. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN 2011 International electron devices and materials symposia 
882011Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxyY. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN 2011 International electron devices and materials symposia 
892011Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffractionF. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN Journal of Physics D: Applied Physics 33
902011Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperaturesY. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN Journal of the Taiwan Institute of Chemical Engineers 76
912011Structural properties of (111)B GaAsSb grown on GaAs substratesY. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN 18th American conference on crystal growth and epitaxy, ACCGE-18 
922011Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAsC. J. Wu; K. T. Chen; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN 38th international symposium on compound semiconductors (ISCS 2011) 
932011Extended X-ray absorption fine structure of InAsPSbC. J. Wu; G. Tsai; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN 23rd international conference on indium phosphide and related materials (IPRM 2011) 
942011Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxyT. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN Journal of Crystal Growth 31
952011Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wellsJ. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics 55
962011Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBEK. J. Cheetham; A. Krier; I. Patel; J. S. Tzeng; HAO-HSIUNG LIN Journal of Physics D: Applied Physics 33
972011Orentation dependent phase separation in GaAsSbY. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN 2011 AVS international plasma workshop on processing and characterization of advanced materials 
982011Optical characterization of GaAs <inf>0.7</inf>Sb <inf>0.3</inf>/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structuresWu, J.D.; Lin, Y.J.; Huang, Y.S.; Lin, Y.R.; Lin, H.H.; HAO-HSIUNG LIN AIP Conference Proceedings00
992010InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxyC. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN 2010 internal conference on optics and photonics in Taiwan 
1002010Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxyY. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN International conference on optics and photonics in Taiwan 
1012010環境光偵測器�L�E��; ���j�v; �L����; ���T��; ������; HAO-HSIUNG LIN 
1022010Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxyH. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN Materials Chemistry and Physics 67
1032010Hetero-epitaxy of InAs on patterened Si (100) substratesY. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN 2010 international electron devices and materials symposia 
1042010Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxyJ. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN 2010 international electron devices and materials symposia 
1052010X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxyC. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN 2010 Micro-optics conference (MOC'10) 
1062010Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum wellC. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X) 
1072010Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBET. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN 16th international conference on crystal growth (ICCG-16) 
1082010Optical properties of As-rich InAsSb/InAsPSb multiple quantum wellC. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2010 
1092010Raman scattering in InAsPSb quaternary alloysJ. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2010 
1102010Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBET. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2010 
1112010Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxyY. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2010 
1122010Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxyS. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2010 
1132010In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistorY. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN IEEE Electron Device Letters 22
1142010Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopyY. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN MBE Taiwan 2010 
1152010The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxyJ. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN 22nd International Conference on Indium Phosphide and Related Materials (IPRM) 00
1162010Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbNY. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN Applied Physics Letters 1212
1172009Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wellsC. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN OPT2009 
1182009Nitrogen atomic rearrangement in thermally annealed GaAsSbNY. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN OPT2009 
1192009Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVDY. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN 2009 International electron devices and materials symposia 
1202009Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxyT. C. Ma; H. H. Lin; HAO-HSIUNG LIN 2009 International electron devices and materials symposia 
1212009A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen speciesY. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN 2009 International electron devices and materials symposia 
1222009Photoluminescence of InAsSb/InAsPSb quantum wellC. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN 2009 International electron devices and materials symposia 
1232009Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucruresH. H. Lin; HAO-HSIUNG LIN 2009 International electron devices and materials symposia 
1242009The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wellsJ. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1252009Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbNS. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN International Journal of Electrical Engineering 0
1262009Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbNY. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2009 
1272009Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbNT. C. Ma; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2009 
1282009InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxyC. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN 
1292009GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layerY. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN Electronics Letters 87
1302009Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structuresP. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN Journal of Applied Physics. 98
1312009Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructuresC. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN Applied Physics Letters 97
1322009Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN Physica Status Solidi (A) Applications and Materials Science 00
1332009Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eyeH. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN 
1342009GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layerY. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN Applied Physics Letters 22
1352008Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunctionC. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN International conference on optics and photonics in Taiwan (OPT’08) 
1362008Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasersY. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN International conference on optics and photonics in Taiwan (OPT’08) 
1372008Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbNS. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN 2008 International electron devices and materials symposia 
1382008Band structure of dilute nitride GaAsSbNY. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN 2008 International electron devices and materials symposia 
1392008Photoluminescence study of InAsPSb epilayers grown on GaAs substratesY. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN 2008 International electron devices and materials symposia 
1402008Energy gap reduction in GaAsSbNY. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN Applied Physics Letters 4944
1412008砷化鎵基含銻化合物半導體材料與元件之研究 (新制多年期第1年)林浩雄 
1422008Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectanceS. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN Thin Solid Films 1111
1432008Band alignment of InAsSb/InAsPSb quantum wellsC. J. Wu; H. H. Lin; HAO-HSIUNG LIN 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) 
1442008Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronicsQ. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN Applied Physics Letters 2823
1452008Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronicsQ. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) 2823
1462008Design and fabrication of AlGaAs ambient light detectorsT. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN IEEE Photonics Technology Letters 
1472008三五族多接面疊接太陽電池之研究林浩雄 
1482008中紅外線光電半導體材料與元件的研究 (新制多年期第1年)林浩雄 
1492008中紅外線化合物半導體材料與元件(2/2)林浩雄 
1502008Photoluminescence of InAs0.04P0.67Sb0.29Tsai, Gene; Wang, De-Lun; HAO-HSIUNG LIN Journal of Applied Physics. 67
1512008Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxyHsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN Journal of Applied Physics. 42
1522008Dilute nitride GaAsSbN grown by gas source molecular beam epitaxyH. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN MBE Taiwan 2008 
1532008Band alignment of InAsSb/InAsPSb quantum wellC. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2008 
1542008Electro-modulation enhancement in the InGaNAs/GaAs quantum well structuresJ. R. Lee; C. R. Lu; H. L. Liu; L. W. Sung; HAO-HSIUNG LIN Physica Status Solidi (C) Current Topics in Solid State Physics 00
1552008GaAsSbN/GaAs long wavelength PIN detectorsC. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN 20th International Conference on Indium Phosphide and Related Materials 40
1562008Origin of the annealing-induced blue-shift in GaAsSbNY. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN 20th International Conference on Indium Phosphide and Related Materials 30
1572008Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wellsT. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; L. C. Chou; HAO-HSIUNG LIN Materials Science and Engineering B: Solid-State Materials for Advanced Technology 3028
1582008Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layersChen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; HAO-HSIUNG LIN Journal of Physics and Chemistry of Solids 11
1592008Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructureK. Y. Chen,; HAO-HSIUNG LINet al. American Physical Society spring meeting 2008 (APS2008) 
1602008AlGaAs Ambient Light Detectors With a Human-Eye Spectral ResponseLin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung IEEE Photonics Technology Letters 22
1612008Energy gap reduction in dilute nitride GaAsSbNLin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung Applied Physics Letters 4944
1622008Surface and material characteristics of Ga<inf>2</inf>O<inf>3</inf> thin films on GaAsHuang, P.-F.; Chen, Y.-T.; Lee, H.Y.; Feng, Z.C.; Lin, H.-H.; Lu, W.; HAO-HSIUNG LIN Proceedings of SPIE - The International Society for Optical Engineering30
1632007高效率多接面疊接太陽電池的新型材料研究林浩雄 
1642007Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5mC. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1652007Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary allyC. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN OPT2007 
1662007Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1672007Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam EpitaxyL. C. Chou; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1682007Effect of thermal annealing on the optical properties of GaAsSbNY. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1692007Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressorsY. R. Lin; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1702007Origin of the annealing-induced blue-shift in GaAsSbN bulk layersY. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN OPT2007 
1712007Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloyG. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN OPT2007 
1722007類人眼之光偵測器HAO-HSIUNG LIN ; 林浩雄; 馬大鈞; 吳俊逸
1732007Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substratesT. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2007 
1742007[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxyL. C. Chou; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2007 
1752007Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxyT. C. Ma; Y. T. Lin; T. Y. Chen; L. C. Chou; HAO-HSIUNG LIN 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials 111
1762007Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopyLee, C. H.; Huang, Y. S.; Wang, J. S.; Chan, C. H.; HAO-HSIUNG LIN Journal of Applied Physics. 910
1772007Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxyG. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) 
1782007InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxyC. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) 
1792007GaAsSb/GaAs量子結構與元件(2/2)林浩雄 
1802007InAsPSb quaternary alloy grown by gas source molecular beam epitaxyG. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN Journal of Crystal Growth 109
1812007Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effectsY. C. Wen; L. C. Chou; H. H. Lin; V. Gusev; K. H. Lin; C. K. Sun; HAO-HSIUNG LIN ; CHI-KUANG SUN Applied Physics Letters 2424
1822007The dependence of terahertz radiation on the built-in electric field in semiconductor microstructuresHwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN ; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung ; Liu, Po-WeiOptics Express 00
1832007Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energyS. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN Applied Physics Letters 3332
1842007Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wellsH. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN physica status solidi (a) 22
1852007Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studiesT. T. Chen,; C. L. Cheng,; F. Y. Chang,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN ; YANG-FANG CHEN Physics Review B4547
1862007The optical properties of (Mn,Ga)As and (Be,Ga)AsLee, C.S.; Chang, C.C.; Shih, M.F.; Huang, C.C.; Chang, Y.H.; Lin, H.H.; Ma, T.C.; YUAN-HUEI CHANG ; MING-FENG SHIH ; HAO-HSIUNG LIN AIP Conference Proceedings00
1872007Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structuresWang, J.S.; HAO-HSIUNG LIN ; YANG-FANG CHEN Nanotechnology 1513
1882007An experimental study on Γ(2) modular symmetry in the quantum Hall system with a small spin splittingHuang, C.F.; Cheng, H.H.; Yang, Z.P.; Yeh, H.D.; Hsu, C.H.; Hang, D.R.; CHI-TE LIANG ; YUAN-HUEI CHANG ; HAO-HSIUNG LIN Journal of Physics Condensed Matter 1111
1892007Determination of interband transition dipole moment of InAs/InGaAs quantum dots from modal absorption spectraWu, D.-C.; Kao, J.-K.; Mao, M.-H.; Chang, F.Y.; MING-HUA MAO ; HAO-HSIUNG LIN Conference on Lasers and Electro-Optics, 2007, CLEO 200700
1902006Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxyT. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN International electron devices and materials symposia 
1912006Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxyD. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN OPT2006 
1922006Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxyY. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN OPT2006 
1932006Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxyT. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN OPT 2006 
1942006Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fieldsY. C. Wen; L. C. Chou; H. H. Lin; K. H. Lin; C. Y. Chen; C. K. Sun; HAO-HSIUNG LIN OPT2006 
1952006Electric vertically coupled quantum dots grown by molecular beam epitaxyY. R. Lin; J. S. Wang; H. H. Lin; HAO-HSIUNG LIN OPT2006 
1962006A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxyJ. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN OPT2006 
1972006[111]B-oriented GaAsSb grown by gas source molecular beam epitaxyL. C. Chou; Y. R. Lin; C. T. Wan; H. H. Lin; HAO-HSIUNG LIN Microelectronics Journal 76
1982006Effects of thermal annealing on the energy gap of GaAsSbNY. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN International electron devices and materials symposia 
1992006Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxyP. W. Liu; G. Tsai; A. Krier; Q. D. Zhuang; M. Stone; HAO-HSIUNG LIN Applied Physics Letters 1316
2002006Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonicsY. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN ; CHI-KUANG SUN Journal of Applied Physics 88
2012006InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxyG. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN 14th international conference on molecular beam epitaxy
2022006InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layerC. S. Lee; F. Y. Chang; D. S. Liu; HAO-HSIUNG LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 22
2032006Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodesA. Krier; M. Stone; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN Applied Physics Letters 2219
2042006Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wellsHsu, H. P.; Sitarek, P.; Huang, Y. S.; Liu, P.W.; Lin, J.M.; Lin, H. H.; Tiong, K.K.; HAO-HSIUNG LIN Journal of Physics Condensed Matter 76
2052006MBE growth of quaternary InAsPSb alloyH. H. Lin; HAO-HSIUNG LIN MBE Taiwan 2006 and high K materials workshop 
2062006GaAsSbN grown on GaAs by gas source molecular beam epitaxyT. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2006 and high K materials workshop 
2072006Mid-infrared InAsPSb/InAsSb quantum-well light emitterC. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2006 and high K materials workshop 
2082006InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxyG. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2006 and high K materials workshop 
2092006[111]B-oriented GaAsSb grown by gas source molecular beam epitaxyL. C. Chou; Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS) 76
2102006[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxyChou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung Microelectronics Journal 
2112006Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonicsWen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung ; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang Journal of Applied Physics 
2122005Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layersC. R. Lu; H. L. Liu; J. R. Lee; C. H. Wu; L. W. Sung; HAO-HSIUNG LIN Journal of Physics and Chemistry of Solids 22
2132005前瞻性量子元件 子計畫一:砷銻化鎵/砷化鎵第二型量子井雷射(I)林浩雄 
2142005砷銻化銦中紅外線材料與元件(2/2)林浩雄 
2152005Performance evaluation of field-enhanced p-channel split-gate flash memoryW. T. Chu; Y. H. Wang; C. T. Hsieh; Y. T. Lin; C. S. Wang; HAO-HSIUNG LIN IEEE Electron Device Letters 22
2162005Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contentsH. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN Applied Physics Letters 315
2172005前瞻性量子元件林浩雄 
2182005砷化銦量子點之光譜研究林浩雄 
2192005Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxyP. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN OPT2005 
2202005GaAsSb/GaAs quantum wells grown by MBEH. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN MBE Taiwan 2005 
2212005The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum wellG. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN OPT 2005 
2222005InPSb bulk layers grown by gas source molecular beam epitaxyG. Tsai; H. H. Lin; HAO-HSIUNG LIN Mid-infrared optoelectronics: Materials and Devices (MIOMD 7) 
2232005Numerical simulation on optical properties of GaN/AlN quantum dotsC. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN OPT2005 
2242005Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wellsH. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN OPT2005 
2252005InAs/InGaAs/GaAs coupled quantum-dot laserC. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2005 
2262005Growth of InPSb on InAs inside a miscibility gap using gas source MBEG. Tsai; H. H. Lin; HAO-HSIUNG LIN OPT2005 
2272005Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasersC. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN 2005 EDMS 
2282005Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contentsH. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN 17th Indium Phosphide and Related Materials 
2292005Study on the band line-up of GaAsSb/GaAs quantum wellsC. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN MBE Taiwan 2005 
2302005Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applicationsSun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Shih, D.K.; Lin, H.H.; HAO-HSIUNG LIN Conference Proceedings - International Conference on Indium Phosphide and Related Materials10
2312004類人眼光偵測器的模擬與製程最佳化林浩雄 
2322004砷銻化鎵第二型量子元件技術林浩雄 
2332004Shrinkable triple self-aligned field-enhanced split-gate flash memoryChu, Wen-Ting; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN IEEE Transactions on Electron Devices 2319
2342004Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memoryChu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN IEEE Electron Device Letters 11
2352004Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasersM.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO ; HAO-HSIUNG LIN Optical and Quantum Electronics 44
2362004砷銻化銦中紅外線材料與元件(1/2)林浩雄 
2372004High SCR design for one-transistor split-gate full-featured EEPROMChu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN IEEE Electron Device Letters44
2382004Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopyT. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; HAO-HSIUNG LIN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 1615
2392004Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wellsT. T. Chen; W. S. Su; P. W. Liu; HAO-HSIUNG LIN ; YANG-FANG CHEN Applied Physics Letters 107
2402004GaAsSb/GaAs type-II quantum wells for long wavelength laser diodesH. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN MBE Taiwan 
2412004Growth of InAs quantum dots with light emission at 1.3 mF. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN MBE Taiwan 
24220041.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxyP. W. Liu; G. H. Liao; H. H. Lin; HAO-HSIUNG LIN Electronics Letters. 64
2432004Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxyChang, F.Y.; Lee, J.D.; Lin, H.H.; HAO-HSIUNG LIN Electronics Letters 76
2442004Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxyC. M. Lai; F. Y. Chang; G. J. Jan; HAO-HSIUNG LIN Japanese Journal of Applied Physics 00
2452004MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applicationsG. Tsai,; H. H. Lin; HAO-HSIUNG LIN OPT 2004 
2462004Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasersG. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN 2004 IEDMS 
2472004Study on high-power resonant-cavity light-emitting diodesL. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN OPT 2004 
2482004Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nmF. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN 2004 IEDMS 
2492004Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injectionC. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN OPT2004 
25020041.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxyLiu, P.-W.; Liao, G.-H.; HAO-HSIUNG LIN Electronics Letters 64
2512004Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillationsHang, D.R.; D. K. Shih; C. F. Huang; W. K. Hung; Y. H. Chang; HAO-HSIUNG LIN ; YANG-FANG CHEN Physica E: Low-Dimensional Systems and Nanostructures87
2522003Observation of coherent interfacial optical phonons in III-V semiconductor nanostrcturesY. M. Chang,; N. A. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN The 5th Pacific Rim Conference on Lasers and Electro-Optics 00
2532003PDIC 用光偵測器之量測、模擬與製程最佳化林浩雄 
2542003子計畫一:砷銻化鎵第二型量子井的成長與元件技術林浩雄 
2552003前瞻性量子元件技術林浩雄 
2562003InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasersD.-K. Shih; Y.-H. Lin; K.-H. Chiang; HAO-HSIUNG LIN The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003 10
25720031.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic propertiesM.-H. Mao; T.-Y. Wu; F.-Y. Chang; H.-H. Lin; HAO-HSIUNG LIN The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. 00
2582003Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning techniqueM.-H. Mao; D.-M. Yeh; P.-W. Liu; H.-L. Chen; C.-T. Pan; HAO-HSIUNG LIN The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003 00
2592003GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laserLin, Hao-Hsiung ; Liu, Po-Wei; Chen, Jhe-RenOptoelectronics 00
2602003GaAsSb/GaAs type-II quantum well and its application on ~1.3m laserH. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN Sixth Chinese Optoelectronics Symposium 00
2612003Temperature dependence of photoreflectance in InAs/GaAs quantum dotsC. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN Applied Physics Letters 1818
2622003Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applicationsShih, D.K.; Lin, Y.H.; HAO-HSIUNG LIN IEE Proceedings: Optoelectronics 88
2632003Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wellsT. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN ; YANG-FANG CHEN Journal of Applied Physics 1515
2642003Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxyG. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN Journal of Electronic Materials 76
2652003Band Gap Reduction in InAsN AlloysD. K. Shih; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN Japanese Journal of Applied Physicsic 6765
2662003Resonant-cavity light-emitting diodes with coupled cavityL. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN Electron devices and materials symposium 
2672003A study of optical properties of InGaAs/GaAs quantum dotsC. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN Journal of the Korean Physical Society 
2682003Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wellsH. P. Hsu; Y. S. Huang; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN OPT’03 
2692003GaAsSb/GaAs type-II quantum wells for 1.3m diode lasersH. H. Lin,; P. W. Liu,; G. H. Liao,; HAO-HSIUNG LIN electron devices and materials symposium 
27020031.3m GaAsSb/GaAs single quantum well laser diodeG. H. Liao; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN OPT’03 
2712003InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxyF. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN Electron devices and materials symposium 
2722003Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxyG. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN OPT’03 
2732003Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and PhotoreflectanceHwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung ; Chen, Ming-ChingJapanese Journal of Applied Physics 33
2742003Effect of ingaas capping layer on the properties of InAs/InGaAs quantum dots and lasersChang, F.Y.; HAO-HSIUNG LIN ; CHUNG-CHIH WU Applied Physics Letters5447
2752003Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasersSung, L.W.; HAO-HSIUNG LIN Applied Physics Letters 4944
2762003Optical Properties of InAs1–xNx/In0.53Ga0.47As Single Quantum Wells Grown by Gas Source Molecular Beam EpitaxyChen, Guan-Ru; Lin, Hao-Hsiung ; Wang, Jyh-Shyang; Shih, Ding-KangJournal of Electronic Materials 
2772003Optical Studies of InAs/GaAs and Ge/Si Quantum Dot StructuresJan, G.J.; Lai, C.M.; Chang, F.Y.; Perng, Y.H.; Chang, C.W.; Kao, C.H.; Jan, I.C.; Lin, H.H.; HAO-HSIUNG LIN Proceedings of SPIE - The International Society for Optical Engineering00
2782003Femtosecond carrier dynamics in InGaAsN single quantum wellHsieh, C.-L.; Liu, T.-M.; Tien, M.-C.; Sung, L.-W.; Sun, Chi-Kuang ; Lin, Hao-Hsiung CLEO/Pacific Rim 2003 00
2792002Growth and characterization of low-threshold 1.3m GaAsSb quantum well laserP.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society 00
2802002Growth and characterization of low-threshold 1.3μm GaAsSb quantum well laserLiu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society
2812002Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxyLiu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung; Chen, Jhe-Ren; Lin, Hao-Hsiung Electronics Letters 1716
2822002Novel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer LayersLee, Ching-Ting; Lee, Hsin-Ying; Lin, Hao-Hsiung Japanese Journal of Applied Physics00
2832002奈米結構光電元件之研究-子計畫一:含銻化合物半導體光電元件技術之研究林浩雄 
2842002奈米結構光電元件之研究— 總計畫林浩雄 
2852002光纖通訊應用光電元件製作及數值模擬-子計畫四:含氮化 合物半導體的磊晶成長與元件應用林浩雄 
2862002Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBEL. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN Journal of Crystal Growth 1311
2872002GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputsW. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN Electronics Letters 11
2882002Low-threshold ~1.3m GaAsSb quantum well laserP. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN 2002 IEDMS 
2892002Optical characterization on InAs/GaAs quantum dotsC. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN 2002 IEDMS 
2902002Raman scattering characterization of InAsN bulk film on (100) InP substratesD. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN 2002 IEDMS 
29120021.3m InGaAsN quantum well laser grown by plasma assisted gas source MBEL. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN 2002 IEDMS 
29220021.32m InGaAsN quantum well laser grown by plasma assisted GSMBEL. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN OPT’02 
2932002Structural properties and Raman modes of InAsN bulk films on (100) InP substratesD. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN OPT’02 
29420021.3m InAs/InGaAs quantum dot lasers grown by GSMBEF. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN 2002 IEDMS 
2952002Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBESung, Li-Wei; Lin, Hao-Hsiung ; Chia, Chih-TaJournal of Crystal Growth 1311
2962002GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputsWu, Wen-Chieh; Lin, Hao-Hsiung Electronics Letters 
2972002Nitrogen-induced enhancement of the electron effective mass in InN xAs1-xHung, W.K.; Cho, K.S.; Chern, M.Y.; Chen, Y.F.; Shih, D.K.; Lin, H.H.; Lu, C.C.; Yang, T.R.; HAO-HSIUNG LIN ; YANG-FANG CHEN ; MING-YAU CHERN Applied Physics Letters 2721
2982002Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bondsChiu, Y.S.; Ya, M.H.; Su, W.S.; Chen, T.T.; HAO-HSIUNG LIN ; YANG-FANG CHEN Applied Physics Letters 55
2992002Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InPKe, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; YANG-FANG CHEN Applied Physics Letters 87
3002002V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBEL. W. Sung,; H. H. Lin,; C. T. Chia,; HAO-HSIUNG LIN 2001 MRS Fall Meeting 00
3012002Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum wellHang, D.R.; Huang, C.F.; Hung, W.K.; Chang, Y.H.; Chen, J.C.; Yang, H.C.; Chen, Y.F.; Shih, D.K.; Chu, T.Y.; Lin, H.H.; YUAN-HUEI CHANG ; HAO-HSIUNG LIN ; YANG-FANG CHEN Semiconductor Science and Technology 127
3022001(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applicationsS. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN IEEE Transactions on Electron Devicess 
3032001(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power ApplicationsYang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung ; Kuo, Jenn-MingIEEE Transactions on Electron Devices 
3042001InAsN Grown by Plasma-assisted Gas Source MBED. K. Shih,; H. H. Lin,; T. Y. Chu,; T. R. Yang,; HAO-HSIUNG LIN 2001 MRS Fall meeting, Symposium H 
3052001High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETsH. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN IEICE Transactions on Electronics 4
3062001Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxyJ. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 
3072001InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38mDing-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN Electronics Letters3337
3082001Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wellsG. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN Journal of Applied Physics 43
3092001Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wellsC. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN Chinese Journal of Physics 44
3102001以分子束磊晶法成長氮化鎵系列材料(三)林浩雄 
3112001氮砷化銦塊材材料及分子束磊晶成長銻化鎵研究林浩雄 
3122001集總常數補償式高低通平衡至不平衡轉換器HAO-HSIUNG LIN ; 邱煥凱; 林浩雄
3132001背靠背式雙波長半導體雷射元件HAO-HSIUNG LIN ; 洪儒菘; 林浩雄
3142001Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxyChang, Chin-An; HAO-HSIUNG LINet al. Journal of Crystal Growth 22
3152001Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBEL. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN Optics and Photonics Taiwan 1311
3162001Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum WellP. W. Liu; H. H. Lin; HAO-HSIUNG LIN Optics and Photonics Taiwan '01 
3172001On the InAs(N)/InGaAs quantum wellsT. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN 2001 Electronics Devices and Materials Symposia 
3182001Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBED. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN Middle Infrared Coherent Sources MICS’01 International Workshop 
3192001Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum wellM. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN 2001 Electron Devices and Materials Symposia 
3202001Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applicationsYang, S.-C.; Chiu, H.-C.; Chan, Y.-J.; Lin, H.-H.; Kuo, J.-M.; HAO-HSIUNG LIN IEEE Transactions on Electron Devices76
3212001Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wellsChen, Guan-Ru; Lin, Hao-Hsiung ; Wang, Jyh-Shyang; Shih, Ding-KangJournal of Applied Physics 
3222001InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μmShih, Ding-Kang; Lin, Hao-Hsiung ; Lin, Y.H.Electronics Letters 
3232001Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxyWang, Jyh-Shyang; Lin, Hao-Hsiung ; Song, Li-Wei; Chen, Guan-RuJournal of Vacuum Science & Technology2723
3242000以分子束磊晶法成長氮化鎵系列材料(II)林浩雄 
3252000新型光電材料、元件及雷射光源( II) - 子計劃四: 半導體體光電材料及元 件之研究四林浩雄 
3262000Growth and characterization of InAsN alloysWang, Jyh-Shyang; Lin, Hao-Hsiung ; Sung, Li-Wei; Chen, Guan-Ru2000 International Conference on Indium Phosphide and Related Materials00
3272000GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layerLee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung Materials Science and Engineering B 21
3282000Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum wellFan, J.C.; Hung, W.K.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; JEN-CHEN FAN ; YANG-FANG CHEN Physical Review B - Condensed Matter and Materials Physics 2120
3291999Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopyK. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; HAO-HSIUNG LIN Physica B: Condensed Matter 12
3301999Light emission and detection by metal oxide silicon tunneling diodesC. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN 1999 IEDM 00
3311999Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxyJ. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN Journal of Crystal Growth 32
3321999以分子束磊晶法成長氮化鎵系列材料(I)林浩雄 
3331999三五族半導體光電材料及元件之研究(I)林浩雄 
3341999Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxyJ. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN Optics and Photonics/Taiwan'99 
3351999Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxyWang, Jyh-Shyang; Lin, Hao-Hsiung; HAO-HSIUNG LIN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 2423
3361999Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wellsG. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN Optics and Photonics/Taiwan'99 
3371999InAsN quantum wells grown on InP by gas source MBEJ. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN 3rd international conference on mid-infrared optoelectronics materials and devices 
33819991.55m asymmetric coupled quantum well structure for laser-modulator integrationL. W. Sung; J. S. Wang; H. P. Shiao; C. Y. Wang; I. F. Jang; T. T. Shih; Y. K. Tu; H. H. Lin; HAO-HSIUNG LIN 1999 Electron Devices and Materials Symposia 
3391999InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxyJ. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN 1999 Electron Devices and Materials Symposia 
3401999Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectanceYANG-FANG CHEN ; D. Y. Lin; Y. S. Huang; M. C. Chen; HAO-HSIUNG LIN ; JEN-CHEN FAN Journal of Applied Physics 33
3411999Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxyLiu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung Journal of Crystal Growth 32
3421998Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxyChen, Ming-Chin; Liao, M. C.; Lin, Hao-Hsiung Journal of Crystal Growth 44
3431998Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxyChen, M.-C.; Lin, H.-H.; Shie, C.-W.; HAO-HSIUNG LIN Journal of Applied Physics129
3441998光電材料,元件及現象─子計畫四:三五族半導體光電材料及元件之研究林浩雄 
3451998An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistorTsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung Superlattices and Microstructures 77
3461998Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum wellKang, J.U.; Khurgin, J.B.; Yang, C.C.; Lin, H.H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN Applied Physics Letters97
3471998Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopyChan, C.H.; Chen, M.C.; Lin, H.H.; Chen, Y.F.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN Applied Physics Letters2324
3481998Very thin layers of TIP grown on InP using gas source molecular beam epitaxyLiu, J.-S.; Wang, J.-S.; HAO-HSIUNG LIN Journal of Crystal Growth12
3491998Photoconductivity in self-organized InAs quantum dotsFan, J.C.; Lin, Y.J.; Chen, Y.F.; Chen, M.C.; HAO-HSIUNG LIN ; YANG-FANG CHEN Journal of Applied Physics77
3501998Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodesChan, C.H.; Chen, Y.F.; Chen, M.C.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN Journal of Applied Physics99
3511998Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTsKuo, C.W.; Su, Y.K.; Tsia, C.Y.; HAO-HSIUNG LIN Solid-State Electronics76
3521998Very thin layers of TlP grown on InP using gas source molecular beam epitaxyLiu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung Journal of Crystal Growth 
3531998半導體工程人才培育計畫─子計畫一:半導體材料製程量測實驗課程改進研究(3/3)林浩雄 
3541998Temperature dependence of photoreflectance study on InAs/GaAs self-assembled quantum dotsJan, G.J.; Chang, S.M.; Lai, C.M.; Chen, M.C.; Lin, H.H.; HAO-HSIUNG LIN Proceedings of SPIE - The International Society for Optical Engineering00
3551998Room-temperature 2.2-μM InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxyWang, J.-S.; Lin, H.-H.; Sung, L.-W.; HAO-HSIUNG LIN IEEE Journal of Quantum Electronics3033
3561997Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxyChen, Ming-Chin; Lin, Hao-Hsiung 1997 IEEE International Symposium on Compound Semiconductors00
3571997Lumped-Element Compensated High/Low-Pass Balun Design for MMIC Double-Balanced MixerChiou, Wann-Kaeo; Lin, Hao-Hsiung ; Chang, Chi-YangIEEE Microwave and Guided Wave Letters 
3581997A Miniature MMIC Double Doubly Balanced Mixer Using Lumped Dual Balun for High Dynamic Receiver ApplicationChiou, Hwann-Kaeo; Lin, Hao-Hsiung IEEE Microwave and Guided Wave Letters 
3591997Miniature MMIC star double balanced mixer using lumped dual balunChiou, Hwann-Kaeo; Juang, Yu-Ru; Lin, Hao-Hsiung Electronics Letters 1311
3601997Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor. A subpicosecond Raman probeTsen, K.T.; Ferry, D.K.; Wang, J.-S.; Huang, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN Physica Status Solidi (B) Basic Research0
3611997用分子束磊晶法成長夜視材料及光陰極件(III)林浩雄 
3621997半導體工程人材培育計畫─半導體工程人才培育計畫:子計畫一:半導體材料製程量測實驗課程改進研究(II)林浩雄 
3631997Photoreflectance study of barrier-width dependence of above-barrier states in GaAs-AlxGa1-xAs multiple quantum wellsYANG-FANG CHEN ; HAO-HSIUNG LIN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 11
3641997Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistorsTsai, J.-H.; Cheng, S.-Y.; Lour, W.-S.; Liu, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN Semiconductor Science and Technology1313
3651997A miniature MMIC double doubly balanced mixer using lumped dual balun for high dynamic receiver applicationChiou, H.-K.; Lin, H.-H.; HAO-HSIUNG LIN IEEE Microwave and Guided Wave Letters1712
3661997Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknessesDai, Y.T.; Fan, J.C.; Chen, Y.F.; Lin, R.M.; Lee, S.C.; YANG-FANG CHEN ; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics126122
3671997半導體光電現象及應用(II)─子計畫三:磷砷化銦鎵光電材料及元件之研究林浩雄 
3681997Pump-probe studies of carrier capture processes in semiconductor multiple-quantum-well waveguidesJIAN-JANG HUANG ; DING-WEI HUANG ; Chao, Chung-Yen; Li, Jiun-Haw; CHIH-CHUNG YANG ; Chen, Ming-Ching; HAO-HSIUNG LIN IEEE Photonics Technology Letters 00
3691997Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopyHwang, J.S.; Chou, W.Y.; Hung, M.C.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN Journal of Applied Physics1512
3701997Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixerChiou, H.-K.; Lin, H.-H.; Chang, C.-Y.; HAO-HSIUNG LIN IEEE Microwave and Guided Wave Letters450
3711996An unified GSMBE growth model for GaInAsP on InP and GaAsLiu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung Eighth International Conference on Indium Phosphide and Related Materials, 1996. IPRM '9600
3721996Gas source molecular beam epitaxial growth model for Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> on GaAsLiu, J.-S.; Lee, T.-L.; Lin, H.-H.; HAO-HSIUNG LIN Optical and Quantum Electronics11
3731996A study of the dark currents of InSb charge injection devicesSun, T.P.; Liao, R.H.; Wang, C.H.; Hong, H.M.; Chang, H.; Wu, C.W.; Liu, J.S.; Lin, H.H.; HAO-HSIUNG LIN Optical and Quantum Electronics00
3741996On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung Solid-State Electronics 1010
3751996Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxyLee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung Solid-State Electronics 33
3761996Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistorsJang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung ; Huang, Chao-HsingSolid-State Electronics 00
3771996Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductorTsen, K.T.; Ferry, D.K.; Wang, J.-S.; Huang, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN Applied Physics Letters1110
3781996半導體光電現象及應用整合計畫:子計畫三磷砷化銦鎵光電材料及元件之研究林浩雄 
3791996半導體工程人材培育計畫─半導體工程人才培育計畫:子計畫一:半導體材料製程量測實驗課程改進研究林浩雄 
3801996半導體光電現象及應用─半導體光電現象及應用-子計畫三:磷砷化銦鎵光電材料及元件之研究 I林浩雄 
3811996用分子束磊晶法成長夜視材料及光陰極元件(Ⅱ)林浩雄 
3821996Incorporation of group V elements in Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> grown by gas source molecular beam epitaxyLee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN Journal of Electronic Materials33
3831995Balun design for uniplanar broad band double balanced mixerChiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung Electronics Letters 2929
3841995A novel coplanar waveguide series stub matching structure for a broadband amplifierChiou, H.?K.; Chang, C.?Y.; Lin, H.?H.; HAO-HSIUNG LIN Microwave and Optical Technology Letters00
3851995The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxyLee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN Journal of Crystal Growth55
3861995Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTsHuang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung Solid-State Electronics 84
3871995砷化銦鎵異質接面雙極電晶體及其在光接收器上的應用林浩雄 
3881995Birefringence of Passive Multi-Quantum-Well Semiconductor Slab WaveguidesYang, C.C.; Kang, J.; Stegeman, G.I.; Huang, C.-H.; Li, D.-U.; Lin, H.-H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN IEEE Photonics Technology Letters99
3891995Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonanceChen, Y.F.; Dai, Y.T.; Fan, J.C.; Lee, T.L.; JEN-CHEN FAN ; YANG-FANG CHEN ; HAO-HSIUNG LIN Applied Physics Letters1412
3901995氣態源分子束磊晶法選擇成長技術之研究林浩雄 
3911995Erratum: Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance" (Applied Physics Letters (1995) 66 (2543))YANG-FANG CHEN ; Shen, J.L.; Dai, Y.D.; Jan, G.J.; HAO-HSIUNG LIN Applied Physics Letters00
3921995Gas Source MBE Growth of InP Under In-Rich ConditionsLee, T. L.; Liu, J. S.; 林浩雄 ; Lin, Hao-Hsiung 1994 International Electron Devices and Materials Symposium 
3931995Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layersChen, K.L.; Lin, H.H.; Jan, G.J.; Chen, Y.H.; Tseng, P.K.; HAO-HSIUNG LIN Journal of Applied Physics56
3941995Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonanceChen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; YANG-FANG CHEN ; HAO-HSIUNG LIN Applied Physics Letters55
3951994Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs HeterostructuresHwang, J. S.; Tyan, S. L.; Chou, W. Y.; Lee, M. L.; Weybume, D.; Hang, Z.; Lee, T. L.; Chou, W. Y.; Weybume, D.; Hang, Z.; Lin, Hao-Hsiung ; Lee, T. L.Applied Physics Letters 1718
3961994OEIC用高速元件之研究林浩雄 
3971994AlGaAs for Nonlinear Optics at 1550 nmVilleneuve, A.; Aitchison, J. S.; Al-Hemyari, K.; Ironside, C. N.; Yang, C. C.; Lin, C. H.; 林浩雄 ; Stegeman, G. I.; Aitchison, J. S.; Ironside, C. N.; Lin, Hao-Hsiung ; Stegeman, G. I.SPIE's 1993 Quebec International Symposium on Holography, Microstructure, and Laser Technologies
3981994Room-Temperature Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron GasChen, Y.-H.; Hsu, K.-T.; Chen, K.-L.; Jan, G.-J.; HAO-HSIUNG LIN Japanese Journal of Applied Physics1210
3991994P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room TemperatureTsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN IEEE Electron Device Letters4843
4001994OEIC用高速元件之研究Lin, Hao-Hsiung 
4011994Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistorHsu, K.T.; Chen, Y.H.; Chen, K.L.; Chen, H.P.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN Applied Physics Letters2020
4021994Gas source MBE growth of InP under in-rich conditionsLee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN 1994 International Electron Devices and Materials Symposium, EDMS 199400
4031994Effects of conduction band discontinuity and two dimensional electron gas on the DC characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT'sHuang, C.-H.; Lee, T.-L.; Lin, H.-H.; HAO-HSIUNG LIN 1994 International Electron Devices and Materials Symposium, EDMS 199400
4041994Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well WaveguidesYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung IEEE Journal of Quantum Electronics 
4051994砷化銦鎵砷化鎵應變壓電效應之研究林浩雄 
4061994Effects of Conduction Band Discontinuity and Two Dimentional Electron Gas on the DC Characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT'sHuang, Chang-Hsiu; Lee, T. L.; 林浩雄 ; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung 1994 International Electron Devices and Materials Symposium 
4071994Current Transport in Charge Injection DevicesWu, C. W.; 林浩雄 ; Lin, Hao-Hsiung SPIE International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Application 00
4081994Birefringence of Passive Semiconductor Slab WaveguidesLi, D. U.; Huang, Chang-Hsiu; 張宏鈞 ; 林浩雄 ; Yang, C. C.; Kang, J.; Stegeman, G. L.; Li, D. U.; Huang, Chang-Hsiu; Chang, Hung-Chun ; Lin, Hao-Hsiung ; Kang, J.; Stegeman, G. L.Ultrfast Optics and Applications Conference 
4091994Photoreflectance Characterization of an InAlAs/InGaAs Heterojunction Bipolar TransistorLin, Hao-Hsiung ; Chang, Chien-Cheng; Hsu, K. T.; Chen, Y. H.; Chen, K. L.; Chen, H. P.; ?��???:rp07554; ?��?? Applied Physics Letters 
4101993Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well WaveguidesYang, C. C.; Villeneuve, Alain; Stegeman, George I.; Lin, Cheng Hui; HAO-HSIUNG LIN Optics InfoBase Conference Papers0
4111993Effects of Dispersive Two-Photon Transitions on Femtosecond Pulse Propagation in Multiple Quantum Well WaveguidesYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, Cheng Hui; HAO-HSIUNG LIN Optics InfoBase Conference Papers0
4121993Nonlinear Polarization Switching Near Half the Band Gap in SemiconductorsYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Chiou, I. P; Yang, C. C.; Stegeman, G. I.; Lin, Hao-Hsiung Optics Letters 710
4131993Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well WaveguidesYang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN IEEE Journal of Quantum Electronics2521
4141993High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxyHuang, Chen-Chih; Lin, Hao-Hsiung Solid-State Electronics 10
4151993Effects of dispersive two-photon transitions on femtosecond pulse propagation in semiconductor waveguidesYang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; Yang, C. C.; Villeneuve, A.; CHIH-CHUNG YANG ; 林浩雄 Applied Physics Letters1110
4161993Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase EpitaxyChen, M. K.; Chang, T. C.; 林浩雄 ; Chang, T. C.; Lin, Hao-Hsiung Journal of Applied Physics 35
4171993Injection Current Model of a MOS Diode under Charge-Sharing Mode Readout OperationWu, C.-W.; Lin, H.-H.; HAO-HSIUNG LIN IEEE Transactions on Electron Devices00
4181993Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well WaveguidesYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Villeneuve, A.; Lin, Hao-Hsiung Integrated Photonics Research Topical Meeting 
4191993Dark Current Analysis of InSB MIS CapacitorsWu, C. W.; 林浩雄 ; Lin, Hao-Hsiung 19th EDMS 
4201993砷化銦鋁鎵光偵測器及光接收器之研究林浩雄 
4211993Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InPChen, M. K.; 林浩雄 ; Chen, M. K.; Lin, Hao-Hsiung Journal of Vacuum Science & Technology. B 
4221993砷化鋁鎵異質接面雙極電晶體積體化技術之研究:重點研究群子計劃之二林浩雄 
4231993Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well WaveguideYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung Electronics Letters 
4241993Nonlinear Refractive-Index Near Half the Band Gap in AlGaAsVilleneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung Applied Physics Letters 
4251993Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou OperationWu, C. W.; 林浩雄 ; Lin, Hao-Hsiung IEEE Electronics Device 
4261993Nonlinear refractive-index and two photon-absorption near half the band gap in AlGaAsVilleneuve, A.; Yang, C.C.; Stegeman, G.I.; Lin, C.-H.; HAO-HSIUNG LIN ; CHIH-CHUNG YANG Applied Physics Letters8479
4271993Deep Level Analysis of MBE Grown InAlAs Strained LayersLiu, J. S.; Lee, T. L.; 林浩雄 ; Wu, C. W.; Lin, Hao-Hsiung 19th EDMS 
4281993On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic PhotoreceiverYang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄 ; Tu, Y. K.; Tu, C. H.; Lin, Hao-Hsiung 19th EDMS 
4291993DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar TransitorsHuang, Chang-Hsiu; Lee, T. L.; 林浩雄 ; Lin, Hao-Hsiung The 5th International Conference on InP and Related Material 
4301993Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear SwitchingYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung Conference on Lasers and Electro-Optics
4311993Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their ApplicationsYang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung International Conference on Nonlinear Optical Physics and Applications
4321993Ultrafast All-Optical Polarization Switching Near Half the Band Gap in SemiconductorsYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung Nonlinear Guided-Wave Phenomena
4331993AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam EpitaxyLee, T. L.; Chu, W. D.; 林浩雄 ; Lin, Hao-Hsiung 19th EDMS 
4341993Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling DiodeTu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄 ; Tu, C. H.; Huang, Chang-Hsiu; Lin, Hao-Hsiung 19th EDMS 
4351993On the High Frequency Properties of InGaAs Bipolar TransistorsLin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄 ; Lin, C. H.; Lin, Hao-Hsiung 19th EDMS 
4361993Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar TransistorsHuang, Chang-Hsiu; Lin, C. H.; 林浩雄 ; Huang, Chang-Hsiu; Lin, Hao-Hsiung 19th EDMS 
4371993InAlAs/InGaAs異質接面雙極電晶體之研究林浩雄 
4381993Two-dimensional calculation on the band-to-band tunneling current of iridium antimonide charge injection devicesWu, C.-W.; Lin, H.-H.; HAO-HSIUNG LIN SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation00
4391993Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well WaveguideYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung Integrated Photonics Research Topical Meeting 
4401993Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection DevicesWu, C. W.; 林浩雄 ; Lin, Hao-Hsiung 1993 Symposium on Semiconductor Modeling and Simulation 
4411993Measurements of two-photon absorption coefficient and induced nonlinear refractive-index in GaAs/AlGaAs multiquantum well waveguidesYang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN Electronics Letters1813
4421993Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistorsHuang, Chao-Hsing; Lin, Hao-Hsiung Solid-State Electronics 1111
4431992High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxyLin, Hao-Hsiung ; Huang, Chao-HsingFourth International Conference on Indium Phosphide and Related Materials00
4441992Novel In0·41Ga0·59As/In0·53Ga0·47 as strained emitter heterojunction bipolar transistor grown by molecular beam epitaxyHuang, C.C.; HAO-HSIUNG LIN Electronics Letters01
4451992Studies of Low-Surface 2-KT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar TransistorsWu, Chung Cheng; Ting, Jing-Lung; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung Journal of Applied Physics 
4461992High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam EpitaxyWu, Chung Cheng; Lee, Si-Chen ; Lin, Hao-Hsiung Japanese Journal of Applied Physics 21
4471992Stress-Induced Outdiffusion of Be in P+ GaAs Prepared by Molecular Beam EpitaxyLiu, Biing-Der; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen ; Lin, Hao-Hsiung Journal of Applied Physics 55
4481992生物能場本質之研究林浩雄 ; 李嗣涔 
4491992Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well WaveguidesYang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, Hao-Hsiung Nonlinear Optics:Materials, Fundamentals, and Applications, 2nd Topica Meeting(NONLINEAR OPTICS:MAT) 
4501992氣功態分類及外氣的性質林浩雄 ; 李嗣涔 
4511992Effect to Two-Dimensional Electron Gas on the DC Characteristics of InAlAs/InGaAs Double Heterojunction Bipolar TransistorHuang, Chang-Hsiu; 林浩雄 ; Lin, Hao-Hsiung 1992 International Electron Devices and Materials Symposium 
4521992Current Transport Characteristics of P+/N AlxGa1-XAs Homojunction Diode林浩雄 ; Liu, Y. S.; Lin, Hao-Hsiung Journal of Applied Physics 
4531992Novel CID Emulator for InSb ArrayWu, C. W.; Wu, W. J.; 林浩雄 ; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; Pang, Y. M.; 楊聲震; Wu, C. W.; Lin, Hao-Hsiung ; Liu, Kou-Chen; Sun, Tai-Ping; Yang, Seng-JennSPIE OE/Aerospace sensing symposium
4541992Infrared Detector Using Heavily Be-Doped GaAsShieh, T. H.; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔 ; 林浩雄 ; Shieh, T. H.; Wu, Ming-Yen; Lee, Si-Chen ; Lin, Hao-Hsiung 17th EDMS 
4551992Effect of Hydrogen Passivation on Lightly N-Doped GaAsChen, C. J.; Chang, Y. H.; Chen, T. C.; Li, S. H.; Chen, Y. F.; 林浩雄 ; Chen, T. C.; Li, S. H.; Chen, Y. F.; Lin, Hao-Hsiung 5th International Conference on Shallow Impurity in Semiconductors 
4561992Preparation and Properties of Lattice-Matched InAlAs and InAlGaAs Epilayers on (100) InPLee, T. L.; 林浩雄 ; Lin, Hao-Hsiung 1992 International Electron Devices and Materials Symposium 
4571992InAlAs/InGaAs Heterojunction Bipolar Transistors Grown by Molecular Beam EpitaxyLin, Hao-Hsiung Annual Meeting of the Chinese Physics Association 
4581991砷化鋁鎵異質接面雙極電晶體積體化技術之研究林浩雄 
4591991Two-Dimensional Simulation of the Electric Field Spike of Indium Antimonide Charge Injection DevicesWu, C. W.; 林浩雄 ; Lin, Hao-Hsiung Solid State Electronics 
4601991A Study on the Fabrication of AlGaAs/GaAs Nonabsorption Mirror Laser DiodeCheng, S. J.; 林浩雄 ; Cheng, S. J.; Lin, Hao-Hsiung 17th EDMS 
4611991砷化鋁鎵異質接面雙極電晶體積體化技術之研究 (重點研究群子計畫之二)林浩雄 
4621991Current transport characteristics of P+/N Al<inf>x</inf>Ga<inf>1-x</inf>As homojunction diodesLin, H.-H.; Liu, Y.-S.; HAO-HSIUNG LIN Journal of Applied Physics33
4631991In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam EpitaxChen, M. K.; 李嗣涔 ; 林浩雄 ; Chen, M. K.; Lee, Si-Chen ; Lin, Hao-Hsiung The 17th EDMS 
4641991InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam EpitaxyHuang, Chang-Hsiu; Chen, M. K.; 林浩雄 ; Huang, Chang-Hsiu; Lin, Hao-Hsiung 17th EDMS 
4651991Reactive Ion Etching of GaAs Using CCl2F2 PlasmaHsu, S. M.; 林浩雄 ; Lin, Hao-Hsiung 17th EDMS 
4661991Heavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared DetectorLiu, P. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔 ; 林浩雄 ; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen ; Lin, Hao-Hsiung The 1991 International Conference on Solid State Devices and Materials
4671991Study on the Charge Transient Spectroscopy of Au/Cr/Sio2/N-Insb MIS CapacitorWu, C. W.; 林浩雄 ; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Wu, C. W.; Lin, Hao-Hsiung ; Lin, J. H.; Yang, Seng-Jenn17th EDMS 
4681991AlGaAs/GaAs Heterojunction Bipolar Transistors with High Current Gain Grown by Molecular Beam EpitaxyWu, Chien-Hsing; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung 17th EDMS 
4691991Current Transport Characteristics Of P+/N-AlxGa1-xAs Homojunction Diode林浩雄 ; Liu, Y. S.; Lin, Hao-Hsiung ; Liu, Y. S.1990 International Electron Devices and Materials Symposium 
4701991Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on InpChen, M. K.; 林浩雄 ; Lin, Hao-Hsiung 17th EDMS 
4711990AlGaAs/GaAs Heterojunction Bipolar TransistorsLin, Hao-Hsiung The 6th RSA/ROC Binational Symposium, Electronic Materials and Devices 
4721990Abrupt Heterointerfaces in Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase EpitaxyChen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Lee, J. H.; Lee, Si-Chen ; Lin, Hao-Hsiung Journal of Applied Physics 
4731990Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistorsWu, C.-C.; Ting, J.-L.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics55
4741990The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar TransistorLee, Si-Chen ; Lin, Hao-Hsiung 1990 International Electron Devices and Materials Symposium 
4751990Two-dimensional simulation on the electric field spike of indium antimonide charge injection devicesWu, Chao-Wen; Lin, Hao-Hsiung Solid-State Electronics 
4761990P-Al0.2Ga0.8As/n-Al0.05Ga0.95As/Au Schottky Collector Heterojunction Bipolar Transistor with a Design of High Bandgap Extrinsic BaseChen, M. C.; 林浩雄 ; Lin, Hao-Hsiung 1990 International Electron Devices and Materials Symposium 
4771990Single and Mulitiple AlGaAs Quantum-Well Structures Grown by Liquid-Phase EpitaxyChen, J. A.; Wang, Cheng-Kun; 林浩雄 ; 王維新; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen Journal of Applied Physics 
4781990雷射二極體技術之研究(四)量子井雷射林浩雄 
4791990Model for Vision Illusion and Its Application to Pattern RepresentationLin, Hao-Hsiung ; Lee, Si-Chen 1989 Telecommunications Symposium
4801990臺大電機系化合物半導體三年研究發展計畫(二)李嗣涔 ; 林浩雄 
4811990Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxyChen, J.-A.; Wang, C.-K.; Lin, H.-H.; Wang, W.-S.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics44
4821989Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Reflective Diffraction CouplerLay, T.-S.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN IEEE Journal of Quantum Electronics10
4831989Abrupt heterointerfaces in Al <inf>0.35</inf> Ga <inf>0.65</inf> As/Al <inf>0.05</inf> Ga <inf>0.95</inf> As/Al <inf>0.35</inf> Ga <inf>0.65</inf> As quantum well structure grown by liquid-phase epitaxyChen, J.-A.; Lee, J.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics53
4841989Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction CouplerLay, T. S.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung IEEE Journal of Quantum Electronics 
4851989Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's)Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung 15th EDMS 
4861989Minority-Carrier Lifetime Measurement Using an Al/SiO2/p-Si MOS Capacitor林浩雄 ; Jih, H. J.; Lin, Hao-Hsiung ; Jih, H. J.15th EDMS 
4871989Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning DesignTing, Jing-Lung; 林浩雄 ; 李嗣涔 ; Ting, Jing-Lung; Lin, Hao-Hsiung ; Lee, Si-Chen 15th EDMS 
4881989Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase EpitaxyChen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Chen, J. A.; Lee, J. H.; Lee, Si-Chen ; Lin, Hao-Hsiung Journal of Appllied Physics 
4891988The hot electron effect in double heterojunction bipolar transistors: Theory and experimentChen, Chung-Zen; Lee, Si-Chen ; Lin, Hao-Hsiung Solid-State Electronics 21
4901988Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase EpitaxyChen, J. A.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung The 1988 International Electronic Devices and Materials Symposium 
4911988The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; 劉志文 ; Chen, S. L.; Lay, J. P.; Lin, Hao-Hsiung Applied Physics Letters 
4921988砷化銦鋁鎵光電元件技術研究林浩雄 
4931987Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane sourceLiu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN Applied Physics Letters99
4941987Transport Theory of the Double Heterojunction Bipolar Transistor Based on Current Balancing ConceptLee, Si-Chen ; Lin, Hao-Hsiung Jouranl of Applied Physics 
4951987The Hot Electron Effect in Double Heterojunction Bipolar Transistors:Theory and ExperimentLee, Si-Chen ; Lin, Hao-Hsiung 13th EDMS 
4961987Determine the Minority Carrier Lifetime in P/N Junction Diode Using the Lag Effect of a CID EmulatorTseng, Y. H.; 林浩雄 ; Tseng, Y. H.; Lin, Hao-Hsiung 17th EDMS 
4971987Design of AlGaAs Double Heterojunction Bipolar TransistorsChen, C. Z.; 李嗣涔 ; 林浩雄 ; Chen, C. Z.; Lee, Si-Chen ; Lin, Hao-Hsiung Journal of Applied Physics 
4981987The Characteristics of Silane Doping of GaAs by MOCVD劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; 劉志文 ; Chen, S. L.; Lin, Hao-Hsiung 13th EDMS 
4991987Engineering on AlGaAs Double Heterojunction Bipolar TransistorsChen, C. Z.; 李嗣涔 ; 林浩雄 ; Chen, C. Z.; Lee, Si-Chen ; Lin, Hao-Hsiung Advanced Semiconductor Processing Technologies 
5001987Design of n-p-n AlGaAs double-heterojunction bipolar transistorsChen, C.-Z.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics43
5011986Current Transport Across the Emitter-Base Potential Spike in AlGaAs/GaA Heterojunction Bipolar Transistors李嗣涔 ; Kau, J. N.; 林浩雄 ; Lee, Si-Chen ; Kau, J. N.; Lin, Hao-Hsiung Journal of Applied Physics 
5021986Determination of Alxga1-XAs Band Gap by Schottky Barrier Spectral Response MeasurementLin, Hao-Hsiung ; Lee, Si-Chen Journal of Chinese Institute Engineers 
5031986Determination of the AlGaAs Bandgap by Spectral Response MeasurementLin, Hao-Hsiung ; Lee, Si-Chen Journal of the Chinese Institute of Engeneers 
5041986Determination of augai-xas bandgap by schottky barrier spectral response measurementLin, H.-H.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an00
5051986New Transport Theory of the Homo and Heterojunction Bipolar Transistors and Its Applications李嗣涔 ; Chen, C. Z.; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung Compound Semiconductor Science & Technology 
5061986Evalution of DX-Center in Sn-Doped AlxGa1-xAsLee, H. C.; Lee, Si-Chen ; Lin, Hao-Hsiung ; Hwang, F. C.The 12th EDMS
5071986Transport theory of the double heterojunction bipolar transistor based on current balancing conceptLee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics4037
5081985Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single-Heterojunction Binolar TransistorsLin, H.-H.; SI-CHEN LEE ; HAO-HSIUNG LIN IEEE Electron Device Letters2929
5091985AlGaAs/GaAs Oxide-Stripe Double-Heterostructure LasersShieh, M. H.; 林浩雄 ; 李嗣涔 ; Chiou, Y. L.; Shieh, M. H.; Lin, Hao-Hsiung ; Lee, Si-Chen ; Chiou, Y. L.Journal of Chinese Institute Engineers 
5101985Super-Gain AlGaAs/GaAs Heterojunction Bipolar Transistors Using an Emitter Edge-Thinning DesignLin, Hao-Hsiung ; Lee, Si-Chen Applied Physics Letters 118117
5111985AlGaAs/GaAs V-Groove Channeled Substrate Buried Heterostructure Laser DiodesChen, J. A.; 李嗣涔 ; 林浩雄 ; Chen, J. A.; Lee, Si-Chen ; Lin, Hao-Hsiung Journal of Chinese Institute Engineers 
5121985The Origin of High Offset Voltage in Heterojunction Bipolar Transistor李嗣涔 ; Kau, J. N.; 林浩雄 ; Lee, Si-Chen ; Kau, J. N.; Lin, Hao-Hsiung Applied Physics Letters 
5131985An AIGaAs/GaAs oxide-stripe double-heterostructure laserShieh, M.-H.; Lin, H.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an00
5141985AIGaAs/GaAs V-groove channeled substrate buried heterostructure laser diodesChen, J.-A.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an00
5151985Theory on the AlGaAs Double Heterojunction TransistorLee, Si-Chen ; Lin, Hao-Hsiung The 11th EDMS
5161985Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single Heterojunction Bipolar TransistorsLin, Hao-Hsiung ; Lee, Si-Chen IEEE Electron Device Letters 
5171985AlGaAs/GaAs Single Heterojunction Bipolar Transistors with a Common Emitter Current Gain of 12,500Lin, Hao-Hsiung ; Lee, Si-Chen 11th EDMS 
5181985Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistorsLee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN Journal of Applied Physics1211
5191984AlGaAs/GaAs Stripe Geometry Double Heterstructure LasersShieh, M. H.; Chen, J. A.; 林浩雄 ; 李嗣涔 ; Chiou, Y. L.; Shieh, M. H.; Chen, J. A.; Lin, Hao-Hsiung ; Lee, Si-Chen ; Chiou, Y. L.Annual Meeting of the Chinese Material Science Association 
5201984Dual Wavelength Photodetector and Its Application on Wavelength-Division Multiplexing TechnologyLin, Hao-Hsiung ; Lee, Si-Chen 1984 International Electronic Devices and Materials Symposium 
5211984Determination of AlGaAs Γ15-Γ1 Band Gap Energy by Schottky Barrier Spectral Response Measurement林浩雄 ; Lin, J. S.; Chiou, H. K.; 李嗣涔 ; Lin, Hao-Hsiung ; Lin, J. S.; Lee, Si-Chen Annual Meeting of the Chinese Material Science Association 
5221984An AlGaAs-GaAs dual Wavelength Photodetector with 500 埃 Resolution李嗣涔 ; 林浩雄 ; Chiou, Y. L.; Lee, Si-Chen ; Lin, Hao-Hsiung Solid State Electronics 
5231984Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistorLee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN Applied Physics Letters6967
5241983The Forward Characterization of 50 Amperes Power RectifierChen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo 9th EDMS 
5251983AlGaAs-GaAs Dual-Wavelength Photodetectors for WDM TechnologiesLee, Si-Chen ; Lin, Hao-Hsiung 9th EDMS 
5261982Breakdown Voltage of Junction Passivated Power Rectifier林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo ; Chiou, Y. L.8th EDMS 
5271981Excess Leakage Current of a Rectifier DiodePai, P. L.; Hwang, C. C.; Chen, M. K.; 林浩雄 ; Chiou, Y. L.; Pai, P. L.; Hwang, C. C.; Chen, M. K.; Lin, Hao-Hsiung ; Chiou, Y. L.7th EDMS 
5281981High Frequency Characteristics of Some Thick Film ComponentsChang, C. Y.; 林浩雄 ; 林浩雄 ; 王維新; 王維新; Chiou, Y. L.; Chang, C. Y.; Lin, Hao-Hsiung ; Lin, Hao-Hsiung ; Wang, Way-Seen; Wang, Way-Seen; Chiou, Y. L.; Chiou, Y. L.7th EDMS
5291980An Improvement on the LPE Process for Growing P-AlGaAs on N-GaAsLin, Hao-Hsiung 6th EDMS 
530MayEffect of deposition method on the density of InAs/InGaAs quantum dotChang, Fu-Yu; Wu, T.C.; Lin, Hao-Hsiung; Lin, Hao-Hsiung International Conference onIndium Phosphide and Related Materials 00
531DecA fully integrated broadband amplifier with 161% 3-dB bandwidthWu, Wen-Chieh; Wang, Huei; Lin, Hao-Hsiung Asia-Pacific Microwave Conference, 2001. APMC 200100
532AprOpposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength OperationFan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung ; Lin, Ching-Fuh Applied Physics Letters 23
533-Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxyTalwar, Devki N.; Lin, Hao-Hsiung; Feng, Zhe Chuan; HAO-HSIUNG LIN Journal of Raman Spectroscopy23