Publications

All

Articles

Conference Papers

Books & Book Chapters

Patents

Others

Author

Subject

Date issued

327 2000 - 2024
201 1021 - 1999

By type

Fulltext

456 no fulltext
77 with fulltext

Results 1-533 of 533 (Search time: 0.008 seconds).

	Issue Date	Title	Author(s)	Source	scopus	WOS
1	2023	Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition	Feng, Zhe Chuan; HAO-HSIUNG LIN ; Xin, Bin; Tsai, Shi Jane; Saravade, Vishal; Yiin, Jeffrey; Klein, Benjamin; Ferguson, Ian T.	Vacuum	3	2
2	2022 May	Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy	Shih, Ding-Kang; Lin, Hao-Hsiung ; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R.	IEEE International Conference On Indium Phosphide and Related Materials, 2001.	0	0
3	2021	High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls	Hou W.-C; Shih P.-C; Wu B.B.-R; HAO-HSIUNG LIN ; JIUN-YUN LI	IEEE Transactions on Electron Devices	2	1
4	2021	Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates	Wang B; HAO-HSIUNG LIN	Superlattices and Microstructures	7	6
5	2021	Assessment of intrinsic and doped defects in Bridgman grown Cd1-xZnxTe alloys	Talwar D.N; Becla P; Lin H.-H; Chuan Feng Z.; HAO-HSIUNG LIN	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	3	3
6	2020	Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers	Talwar D.N; Lin H.-H; Chuan Feng Z.; HAO-HSIUNG LIN	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	8	7
7	2020	A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning Excitation	Chu, C.-H.; Mao, M.-H.; Lin, Y.-R.; MING-HUA MAO ; HAO-HSIUNG LIN	Scientific Reports	2	3
8	2020	Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers	Talwar D.N; Lin H.-H; Feng Z.C.; HAO-HSIUNG LIN	Materials Chemistry and Physics	2	2
9	2019	Surface/structural characteristics and band alignments of thin Ga <inf>2</inf> O <inf>3</inf> films grown on sapphire by pulse laser deposition	Yang, H.; Qian, Y.; Zhang, C.; Wuu, D.-S.; Talwar, D.N.; Lin, H.-H.; Lee, J.-F.; Wan, L.; He, K.; Feng, Z.C.; HAO-HSIUNG LIN	Applied Surface Science	54	50
10	2019	A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices	Chu, C.-H.; Mao, M.-H.; Yang, C.-W.; MING-HUA MAO ; HAO-HSIUNG LIN	Scientific reports	4	4
11	2019	Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition	Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu; HAO-HSIUNG LIN	Journal of Crystal Growth	4	4
12	2018	Selective area growth of InAs nanowires from SiO<inf>2</inf>/Si(1?1?1) templates direct-written by focused helium ion beam technology	Yang, C.-W.; Chen, W.-C.; Chou, C.; Lin, H.-H.; HAO-HSIUNG LIN	Journal of Crystal Growth	5	4
13	2018	First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAs<inf>x</inf>P<inf>y</inf>Sb<inf>1-x-y</inf> system	Robouch, B.V.; Lin, H.-H.; Valeev, R.G.; Trigub, A.L.; Omar, J.; Kisiel, A.; Marcelli, A.; HAO-HSIUNG LIN	Journal of Alloys and Compounds	2	2
14	2018	A single nano-void precisely positioned in SiO<inf>2</inf>/Si substrate by focused helium ion beam technique	Yang, C.-W.; Chou, C.; Chen, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN	Vacuum	1	1
15	2018	Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line method	Xinyou Liu; Yen-Cheng Ko; Chieh Chou; Hao-Hsiung Lin; HAO-HSIUNG LIN	International Electron Devices & Materials Symposium IEDMS2018
16	2018	Optical and structural characteristics of Bridgman grown cubic Zn<inf>1-x</inf>Mn<inf>x</inf>Te alloys	Talwar, D.N.; Becla, P.; Lin, H.-H.; Feng, Z.C.; HAO-HSIUNG LIN	Materials Chemistry and Physics	1	1
17	2018	Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector	Hao-Kai Hsieh; Chieh Chou; Hao-Hsiung Lin; Jiunn-Jye Luo; Shao-Yi Li; HAO-HSIUNG LIN	2018 7th International Symposium on Next Generation Electronics	1	0
18	2018	Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms	Talwar, D.N.; Wan, L.; Tin, C.-C.; Feng, Z.C.; HAO-HSIUNG LIN	Applied Surface Science	6	5
19	2018	Reactive-Ion Etching of Bismuth Thin Film Using CHF3	Yen-Cheng Ko; Ding-Lun Wu; Che-Wei Yang; Hao-Hsiung Lin; HAO-HSIUNG LIN	International Electron Devices & Materials Symposium IEDMS2018
20	2018	Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, rutherford backscattering, grazing incidence X-ray diffraction and Variable Angle Spectroscopic Ellipsometry	Luo, X.; Li, Y.; Yang, H.; Liang, Y.; He, K.; Sun, W.; Yao, S.; Lu, X.; Wan, L.; Feng, Z.; HAO-HSIUNG LIN	Crystals	52	54
21	2018	Synchrotron radiation X-Ray absorption spectroscopy and spectroscopic ellipsometry studies of insb thin films on GaAs grown by metalorganic chemical vapor deposition	Qian, Y.; Liang, Y.; Luo, X.; He, K.; Sun, W.; Talwar, D.N.; Chan, T.-S.; Ferguson, I.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN	Advances in Materials Science and Engineering	5	6
22	2017	One-dimensional nanostructure growth on graphene and devices thereof	HAO-HSIUNG LIN
23	2017	Growth direction control of InAs nanowires on (0 0 1) Si substrate with SiO<inf>2</inf>/Si nano-trench	Chen, W.-C.; Chen, L.-H.; Lin, Y.-T.; HAO-HSIUNG LIN	Journal of Crystal Growth	0	0
24	2017	Partially polycrystalline GaN1-xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap	Wu, H.-M.; Lin, K.-I.; Liu, Y.-X.; Cheng, Y.-C.; HAO-HSIUNG LIN	Japanese Journal of Applied Physics	1	1
25	2016	X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD	Xin, J.; Chang, C.M.; Hsueh, C.-H.; Lee, J.-F.; Chen, J.-M.; Lin, H.-H.; Lu, N.; Ferguson, I.T.; Guan, Y.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016	1	0
26	2016	Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP	Wu, H.-M.; Tsai, S.-J.; Ho, H.-I.; Lin, H.-H.; HAO-HSIUNG LIN	Journal of Applied Physics	3	3
27	2016	Structure of GaAsN alloy within miscibility gap	Wu, H.-M.; Lin, K.-I.; Lin, H.-H.; HAO-HSIUNG LIN	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016	0	0
28	2016	Indium and nitrogen K-edge X-ray absorption spectroscopy of In <inf>x</inf> Ga <inf>1-x</inf> N	Li, X.; Chang, C.M.; Hsueh, C.-H.; Lee, Z.-F.; Chen, J.-M.; Lin, H.-H.; Wang, X.; Dietz, N.; Guan, Y.-J.; Feng, Z.C.; HAO-HSIUNG LIN	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016	0	0
29	2016	Raman scattering in InP <inf>1-x</inf> Sb <inf>x</inf> alloys grown on InAs substrate by gas source MBE	Chang, C.-M.; Tsai, C.-Y.; Lin, H.-H.; HAO-HSIUNG LIN	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016	0	0
30	2016	Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy	Yang, C.-W.; Chen, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016	0	0
31	2016	Structural properties of InAs nanowires on (001) Si	Chen, W.-C.; Chen, L.-H.; Lin, Y.-T.; Lin, H.-H.; HAO-HSIUNG LIN	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016	0	0
32	2016	Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy	Xin, B.; Zhang, Y.-M.; Wu, H.-M.; Feng, Z.C.; Lin, H.-H.; Jia, R.-X.; HAO-HSIUNG LIN	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	4	2
33	2015	Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques	H. P. Hsu; J. D. Wu; Y. J. Lin; Y. S. Huang; Y. R. Lin; HAO-HSIUNG LIN	Japanese Journal of Applied Physics	1	1
34	2015	A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD	Xin, B.; Jia, R.-X.; Hu, J.-C.; Tsai, C.-Y.; Lin, H.-H.; Zhang, Y.-M.; HAO-HSIUNG LIN	Applied Surface Science	19	14
35	2015	Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode	Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN	Microelectronics Journal	0	0
36	2015	Effect of Focused Ion Beam Imaging on the Crystallinity of InAs	Chen, W.-C.; Huang, T.-H.; Chen, K.-C.; Lin, H.-H.; HAO-HSIUNG LIN	Microscopy and Microanalysis	0	0
37	2015	InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm	Lin, Y.-C.; Mao, M.-H.; Wu, C.-J.; Lin, H.-H.; MING-HUA MAO ; HAO-HSIUNG LIN	Optics Letters	3	3
38	2014	Photoluminescence and Raman scattering of degenerate InN	F. W. Pranoto,; C. Y. Tsai,; Y. C. Liao,; L. C. Chen,; K. H. Chen,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN	OPTIC 2014, optics and photonics Taiwan, international conference 2014
39	2014	Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer	T. H. Huang,; W. C. Chen,; K. C. Chen,; H. H. Lin,; HAO-HSIUNG LIN	OPTIC 2014, optics and photonics Taiwan, international conference 2014
40	2014	Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate	C. Y. Tsai,; B. Xin,; Z. C. Feng,; Y. M. Zhang,; R. X. Jia,; H. H. Lin,; HAO-HSIUNG LIN	OPTIC 2014, optics and photonics Taiwan, international conference 2014
41	2014	X-ray absorption near edge structure of silicon in indium arsenide	M. C. Liu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN	OPTIC 2014, optics and photonics Taiwan, international conference 2014
42	2014	Effect of focued ion beam imaging process on the crystallinity of InAs	T. H. Huang; W. C. Chen; K. C. Chen; H. H. Lin; HAO-HSIUNG LIN	IEDMS 2014, international electron devices and materials symposium
43	2014	Study of twin defects in (111)B GaAsSb by X-ray diffraction	S. C. Chen,; Y. H. Lin,; H. H. Lin,; HAO-HSIUNG LIN	IEDMS 2014, international electron devices and materials symposium
44	2014	Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity	Y. C. Lin,; M. H. Mao,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN	MIOMD 2014 infrared optoelectronics: materials and devices
45	2014	Band discontinuity in InAsPSb alloy system	C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN	MIOMD 2014 infrared optoelectronics: materials and devices
46	2014	Structural properties of GaAsSb grown on (111)B GaAs	Y. H. Lin,; S. C. Chen,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN	21th Symposium on nano device technology
47	2014	Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure	C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN	21th Symposium on nano device technology
48	2014	Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy	H. P. Hsu; P. H. Wu; J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; K. K. Tiong; HAO-HSIUNG LIN	Japanese Journal of Applied Physics	0	0
49	2014	Ordering InGaP epilayer grown on Ge substrate	H. M. Wu,; S. J. Tsai,; Y. C. Chang,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN	Thin Solid Films	5	4
50	2014	All-optical switching in a GaAs microdisk resonator	Lin, Y.-C.; Mao, M.-H.; Lin, Y.-R.; Lin, H.-H.; Lin, C.-A.; MING-HUA MAO ; LON A. WANG ; HAO-HSIUNG LIN	2014 IEEE Photonics Conference, IPC 2014	0	0
51	2014	All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling	Lin, Y.-C.; Mao, M.-H.; Lin, Y.-R.; Lin, H.-H.; Lin, C.-A.; MING-HUA MAO ; HAO-HSIUNG LIN ; LON A. WANG	Optics Letters	15	14
52	2013	Properties of Variable Al Content of AlGaN Layers Grown by MOCVD	C. X. Wang,; F. D. Li,; S. C. Wang,; M. Zhu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN	OPTIC 2013, optics and photonics Taiwan, international conference 2013
53	2013	Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation	K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN	Applied Physics Express	17	14
54	2013	Raman spectroscopy of GaAsPSb alloys	C. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN	IEDMS 2013, international electron devices and materials symposium
55	2013	Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes	C. X. Wang,; Y. T. He,; M. T. Niu,; J. Y. Yao,; E. Jones,; Z. R. Qiu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN	IEDMS 2013, international electron devices and materials symposium
56	2013	Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering	B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN	International electron devices and materials symposium
57	2013	Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate	H. M. Wu,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN	TACT 2013 international thin films conference
58	2013	Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs	Y. R. Chen,; H. H. Lin; HAO-HSIUNG LIN	40th international symposium on compound semiconductors (ISCS 2013)
59	2013	GaAsPSb and its application to heterojunction bipolar transistors	Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN	40th international symposium on compound semiconductors (ISCS 2013)
60	2013	Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure	J. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	Journal of Luminescence	5	5
61	2013	Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)	D. N. Talwar,; T. R. Yang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN	Applied Physics Letters	0	1
62	2013	Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN	Journal of Physics D: Applied Physics	9	9
63	2013	Short range structure of dilute nitride GaAsSbN	H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN	Physics and Mechanics of New Materials and Their Applications	0
64	2013	Short range structure of dilute nitride GaAsSbN	Lin, H.-H.; Chiou, C.-L.; Lin, Y.-T.; Ma, T.-C.; Wu, J.-S.; Feng, Z.-C.; HAO-HSIUNG LIN	Physics and Mechanics of New Materials and Their Applications	0
65	2012	Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs	Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN	Applied Physics Letters
66	2012	A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells	H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN	International electron devices and materials symposium
67	2012	Slanted InAs nanowires gorwn by GSMBE	W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	OPTIC 2012, optics and photonics Taiwan, international conference 2012
68	2012	Structural properties of InAs nanowires grown by GSMBE	W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	IEDMS 2012, international electron devices and materials symposium
69	2012	Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution	S. H. Li; C. J. Wu; H. H. Lin; HAO-HSIUNG LIN	IEDMS 2012, international electron devices and materials symposium
70	2012	Defects probing by temperature dependence Raman scattering of GaAsSbN	J. Wu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	IEDMS 2012, international electron devices and materials symposium
71	2012	Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy	C. L. Chiou,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN	OPTIC 2012
72	2012	Sb-based zincblende alloys with strong structural disorder	H. H. Lin; HAO-HSIUNG LIN	Indo-Taiwan workshop on nanodevices
73	2012	Electron transport in a GaPSb film	S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG ; HAO-HSIUNG LIN	Nanoscale Research Letters	5	5
74	2012	Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs	C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN ; CHIH-CHUNG YANG	Applied Physics Letters	8	8
75	2012	Short range structure of dilute nitride GaAsSbN	H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN	Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications	0
76	2012	MBE growth of InAs nanowires on Si	L. H. Chen,; Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN	2012 Taiwan MBE Conference
77	2012	Structural properties of GaAsSb grown on GaAs	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN	2012 Taiwan MBE Conference
78	2012	Study on the lattice structure of InAsPSb grown on GaAs	G. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN	2012 Taiwan MBE Conference
79	2012	Study on the structural properties of InP0.52Sb0.48 on GaAs	C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN	2012 Taiwan MBE Conference
80	2012	InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction	Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN	IEEE Electron Device Letters	4	4
81	2012	Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN	Thin solid film	3	4
82	2012	Evidence of nitrogen reorganization in GaAsSbN alloys	H. P. Hsu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	Japanese Journal of Applied Physics.	7	7
83	2012	Short channel effects on gallium nitride/gallium oxide nanowire transistors	Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO ; HAO-HSIUNG LIN ; LUNG-HAN PENG ; YUH-RENN WU	Applied Physics Letters	20	19
84	2012	Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition	Li, L.; Hong-Liao, C.-J.; Huang, Y.Z.; Chen, C.; Yao, S.; Qiu, Z.; Lin, H.H.; Ferguson, I.T.; Feng, Z.C.; HAO-HSIUNG LIN	Proceedings of SPIE - The International Society for Optical Engineering	0	0
85	2012	Structural and electronic properties of GaAs<inf>0.64</inf>P <inf>0.19</inf>Sb<inf>0.17</inf> on GaAs	Chin, Y.-C.; Chen, J.-Y.; Chen, B.-H.; Tsai, H.-S.; Huang, Y.-S.; Lin, H.-H.; HAO-HSIUNG LIN	Applied Physics Letters	1	1
86	2011	X-ray absorption find structures of InPSb alloys	C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN	International photonics conference 2011 (IPC2011)
87	2011	Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy	C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN	2011 International electron devices and materials symposia
88	2011	Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy	Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN	2011 International electron devices and materials symposia
89	2011	Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction	F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN	Journal of Physics D: Applied Physics	3	3
90	2011	Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures	Y. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN	Journal of the Taiwan Institute of Chemical Engineers	7	6
91	2011	Structural properties of (111)B GaAsSb grown on GaAs substrates	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN	18th American conference on crystal growth and epitaxy, ACCGE-18
92	2011	Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs	C. J. Wu; K. T. Chen; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN	38th international symposium on compound semiconductors (ISCS 2011)
93	2011	Extended X-ray absorption fine structure of InAsPSb	C. J. Wu; G. Tsai; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN	23rd international conference on indium phosphide and related materials (IPRM 2011)
94	2011	Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy	T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	Journal of Crystal Growth	3	1
95	2011	Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics	5	5
96	2011	Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE	K. J. Cheetham; A. Krier; I. Patel; J. S. Tzeng; HAO-HSIUNG LIN	Journal of Physics D: Applied Physics	3	3
97	2011	Orentation dependent phase separation in GaAsSb	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN	2011 AVS international plasma workshop on processing and characterization of advanced materials
98	2011	Optical characterization of GaAs <inf>0.7</inf>Sb <inf>0.3</inf>/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures	Wu, J.D.; Lin, Y.J.; Huang, Y.S.; Lin, Y.R.; Lin, H.H.; HAO-HSIUNG LIN	AIP Conference Proceedings	0	0
99	2010	InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy	C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN	2010 internal conference on optics and photonics in Taiwan
100	2010	Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy	Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN	International conference on optics and photonics in Taiwan
101	2010	環境光偵測器	�L�E��; ��j�v; �L��; ��T��; ��; HAO-HSIUNG LIN
102	2010	Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy	H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN	Materials Chemistry and Physics	6	7
103	2010	Hetero-epitaxy of InAs on patterened Si (100) substrates	Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN	2010 international electron devices and materials symposia
104	2010	Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy	J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN	2010 international electron devices and materials symposia
105	2010	X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy	C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN	2010 Micro-optics conference (MOC'10)
106	2010	Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X)
107	2010	Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	16th international conference on crystal growth (ICCG-16)
108	2010	Optical properties of As-rich InAsSb/InAsPSb multiple quantum well	C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2010
109	2010	Raman scattering in InAsPSb quaternary alloys	J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2010
110	2010	Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2010
111	2010	Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2010
112	2010	Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy	S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2010
113	2010	In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor	Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN	IEEE Electron Device Letters	2	2
114	2010	Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy	Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN	MBE Taiwan 2010
115	2010	The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN	22nd International Conference on Indium Phosphide and Related Materials (IPRM)	0	0
116	2010	Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN	Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN	Applied Physics Letters	12	12
117	2009	Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	OPT2009
118	2009	Nitrogen atomic rearrangement in thermally annealed GaAsSbN	Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN	OPT2009
119	2009	Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD	Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN	2009 International electron devices and materials symposia
120	2009	Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy	T. C. Ma; H. H. Lin; HAO-HSIUNG LIN	2009 International electron devices and materials symposia
121	2009	A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species	Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN	2009 International electron devices and materials symposia
122	2009	Photoluminescence of InAsSb/InAsPSb quantum well	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	2009 International electron devices and materials symposia
123	2009	Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures	H. H. Lin; HAO-HSIUNG LIN	2009 International electron devices and materials symposia
124	2009	The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells	J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
125	2009	Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	International Journal of Electrical Engineering	0
126	2009	Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN	Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2009
127	2009	Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN	T. C. Ma; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2009
128	2009	InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN
129	2009	GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer	Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN	Electronics Letters	8	7
130	2009	Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures	P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN	Journal of Applied Physics.	9	8
131	2009	Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures	C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN	Applied Physics Letters	9	7
132	2009	Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,	H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN	Physica Status Solidi (A) Applications and Materials Science	0	0
133	2009	Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye	H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN
134	2009	GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer	Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN	Applied Physics Letters	2	2
135	2008	Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction	C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN	International conference on optics and photonics in Taiwan (OPT’08)
136	2008	Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers	Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN	International conference on optics and photonics in Taiwan (OPT’08)
137	2008	Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	2008 International electron devices and materials symposia
138	2008	Band structure of dilute nitride GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN	2008 International electron devices and materials symposia
139	2008	Photoluminescence study of InAsPSb epilayers grown on GaAs substrates	Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	2008 International electron devices and materials symposia
140	2008	Energy gap reduction in GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN	Applied Physics Letters	49	44
141	2008	砷化鎵基含銻化合物半導體材料與元件之研究　（新制多年期第1年）	林浩雄
142	2008	Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance	S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN	Thin Solid Films	11	11
143	2008	Band alignment of InAsSb/InAsPSb quantum wells	C. J. Wu; H. H. Lin; HAO-HSIUNG LIN	9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9)
144	2008	Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics	Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	Applied Physics Letters	28	23
145	2008	Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics	Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9)	28	23
146	2008	Design and fabrication of AlGaAs ambient light detectors	T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN	IEEE Photonics Technology Letters
147	2008	三五族多接面疊接太陽電池之研究	林浩雄
148	2008	中紅外線光電半導體材料與元件的研究　（新制多年期第1年）	林浩雄
149	2008	中紅外線化合物半導體材料與元件(2/2)	林浩雄
150	2008	Photoluminescence of InAs0.04P0.67Sb0.29	Tsai, Gene; Wang, De-Lun; HAO-HSIUNG LIN	Journal of Applied Physics.	6	7
151	2008	Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy	Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN	Journal of Applied Physics.	4	2
152	2008	Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy	H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN	MBE Taiwan 2008
153	2008	Band alignment of InAsSb/InAsPSb quantum well	C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2008
154	2008	Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures	J. R. Lee; C. R. Lu; H. L. Liu; L. W. Sung; HAO-HSIUNG LIN	Physica Status Solidi (C) Current Topics in Solid State Physics	0	0
155	2008	GaAsSbN/GaAs long wavelength PIN detectors	C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	20th International Conference on Indium Phosphide and Related Materials	4	0
156	2008	Origin of the annealing-induced blue-shift in GaAsSbN	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN	20th International Conference on Indium Phosphide and Related Materials	3	0
157	2008	Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells	T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; L. C. Chou; HAO-HSIUNG LIN	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	30	28
158	2008	Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers	Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; HAO-HSIUNG LIN	Journal of Physics and Chemistry of Solids	1	1
159	2008	Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure	K. Y. Chen,; HAO-HSIUNG LINet al.	American Physical Society spring meeting 2008 (APS2008)
160	2008	AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response	Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung	IEEE Photonics Technology Letters	2	2
161	2008	Energy gap reduction in dilute nitride GaAsSbN	Lin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung	Applied Physics Letters	49	44
162	2008	Surface and material characteristics of Ga<inf>2</inf>O<inf>3</inf> thin films on GaAs	Huang, P.-F.; Chen, Y.-T.; Lee, H.Y.; Feng, Z.C.; Lin, H.-H.; Lu, W.; HAO-HSIUNG LIN	Proceedings of SPIE - The International Society for Optical Engineering	3	0
163	2007	高效率多接面疊接太陽電池的新型材料研究	林浩雄
164	2007	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
165	2007	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	OPT2007
166	2007	Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10	I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
167	2007	Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy	L. C. Chou; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
168	2007	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
169	2007	Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors	Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
170	2007	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN	OPT2007
171	2007	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN	OPT2007
172	2007	類人眼之光偵測器	HAO-HSIUNG LIN ; 林浩雄; 馬大鈞; 吳俊逸
173	2007	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2007
174	2007	[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy	L. C. Chou; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2007
175	2007	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma; Y. T. Lin; T. Y. Chen; L. C. Chou; HAO-HSIUNG LIN	2007 IEEE 19th International Conference on Indium Phosphide & Related Materials	1	11
176	2007	Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy	Lee, C. H.; Huang, Y. S.; Wang, J. S.; Chan, C. H.; HAO-HSIUNG LIN	Journal of Applied Physics.	9	10
177	2007	Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN	8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8)
178	2007	InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy	C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN	8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8)
179	2007	GaAsSb/GaAs量子結構與元件(2/2)	林浩雄
180	2007	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN	Journal of Crystal Growth	10	9
181	2007	Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects	Y. C. Wen; L. C. Chou; H. H. Lin; V. Gusev; K. H. Lin; C. K. Sun; HAO-HSIUNG LIN ; CHI-KUANG SUN	Applied Physics Letters	24	24
182	2007	The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures	Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN ; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung ; Liu, Po-Wei	Optics Express	0	0
183	2007	Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy	S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN	Applied Physics Letters	33	32
184	2007	Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN	physica status solidi (a)	2	2
185	2007	Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies	T. T. Chen,; C. L. Cheng,; F. Y. Chang,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN ; YANG-FANG CHEN	Physics Review B	45	47
186	2007	The optical properties of (Mn,Ga)As and (Be,Ga)As	Lee, C.S.; Chang, C.C.; Shih, M.F.; Huang, C.C.; Chang, Y.H.; Lin, H.H.; Ma, T.C.; YUAN-HUEI CHANG ; MING-FENG SHIH ; HAO-HSIUNG LIN	AIP Conference Proceedings	0	0
187	2007	Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures	Wang, J.S.; HAO-HSIUNG LIN ; YANG-FANG CHEN	Nanotechnology	15	13
188	2007	An experimental study on Γ(2) modular symmetry in the quantum Hall system with a small spin splitting	Huang, C.F.; Cheng, H.H.; Yang, Z.P.; Yeh, H.D.; Hsu, C.H.; Hang, D.R.; CHI-TE LIANG ; YUAN-HUEI CHANG ; HAO-HSIUNG LIN	Journal of Physics Condensed Matter	11	11
189	2007	Determination of interband transition dipole moment of InAs/InGaAs quantum dots from modal absorption spectra	Wu, D.-C.; Kao, J.-K.; Mao, M.-H.; Chang, F.Y.; MING-HUA MAO ; HAO-HSIUNG LIN	Conference on Lasers and Electro-Optics, 2007, CLEO 2007	0	0
190	2006	Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy	T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	International electron devices and materials symposia
191	2006	Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy	D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN	OPT2006
192	2006	Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN	OPT2006
193	2006	Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN	OPT 2006
194	2006	Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields	Y. C. Wen; L. C. Chou; H. H. Lin; K. H. Lin; C. Y. Chen; C. K. Sun; HAO-HSIUNG LIN	OPT2006
195	2006	Electric vertically coupled quantum dots grown by molecular beam epitaxy	Y. R. Lin; J. S. Wang; H. H. Lin; HAO-HSIUNG LIN	OPT2006
196	2006	A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN	OPT2006
197	2006	[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy	L. C. Chou; Y. R. Lin; C. T. Wan; H. H. Lin; HAO-HSIUNG LIN	Microelectronics Journal	7	6
198	2006	Effects of thermal annealing on the energy gap of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN	International electron devices and materials symposia
199	2006	Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy	P. W. Liu; G. Tsai; A. Krier; Q. D. Zhuang; M. Stone; HAO-HSIUNG LIN	Applied Physics Letters	13	16
200	2006	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics	Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN ; CHI-KUANG SUN	Journal of Applied Physics	8	8
201	2006	InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	14th international conference on molecular beam epitaxy
202	2006	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	C. S. Lee; F. Y. Chang; D. S. Liu; HAO-HSIUNG LIN	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	2	2
203	2006	Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes	A. Krier; M. Stone; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN	Applied Physics Letters	22	19
204	2006	Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	Hsu, H. P.; Sitarek, P.; Huang, Y. S.; Liu, P.W.; Lin, J.M.; Lin, H. H.; Tiong, K.K.; HAO-HSIUNG LIN	Journal of Physics Condensed Matter	7	6
205	2006	MBE growth of quaternary InAsPSb alloy	H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan 2006 and high K materials workshop
206	2006	GaAsSbN grown on GaAs by gas source molecular beam epitaxy	T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2006 and high K materials workshop
207	2006	Mid-infrared InAsPSb/InAsSb quantum-well light emitter	C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2006 and high K materials workshop
208	2006	InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2006 and high K materials workshop
209	2006	[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy	L. C. Chou; Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN	6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS)	7	6
210	2006	[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy	Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung	Microelectronics Journal
211	2006	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics	Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung ; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang	Journal of Applied Physics
212	2005	Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers	C. R. Lu; H. L. Liu; J. R. Lee; C. H. Wu; L. W. Sung; HAO-HSIUNG LIN	Journal of Physics and Chemistry of Solids	2	2
213	2005	前瞻性量子元件子計畫一：砷銻化鎵/砷化鎵第二型量子井雷射（I）	林浩雄
214	2005	砷銻化銦中紅外線材料與元件(2/2)	林浩雄
215	2005	Performance evaluation of field-enhanced p-channel split-gate flash memory	W. T. Chu; Y. H. Wang; C. T. Hsieh; Y. T. Lin; C. S. Wang; HAO-HSIUNG LIN	IEEE Electron Device Letters	2	2
216	2005	Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN	Applied Physics Letters	3	15
217	2005	前瞻性量子元件	林浩雄
218	2005	砷化銦量子點之光譜研究	林浩雄
219	2005	Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN	OPT2005
220	2005	GaAsSb/GaAs quantum wells grown by MBE	H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2005
221	2005	The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well	G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN	OPT 2005
222	2005	InPSb bulk layers grown by gas source molecular beam epitaxy	G. Tsai; H. H. Lin; HAO-HSIUNG LIN	Mid-infrared optoelectronics: Materials and Devices (MIOMD 7)
223	2005	Numerical simulation on optical properties of GaN/AlN quantum dots	C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN	OPT2005
224	2005	Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN	OPT2005
225	2005	InAs/InGaAs/GaAs coupled quantum-dot laser	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2005
226	2005	Growth of InPSb on InAs inside a miscibility gap using gas source MBE	G. Tsai; H. H. Lin; HAO-HSIUNG LIN	OPT2005
227	2005	Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers	C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN	2005 EDMS
228	2005	Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN	17th Indium Phosphide and Related Materials
229	2005	Study on the band line-up of GaAsSb/GaAs quantum wells	C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN	MBE Taiwan 2005
230	2005	Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications	Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Shih, D.K.; Lin, H.H.; HAO-HSIUNG LIN	Conference Proceedings - International Conference on Indium Phosphide and Related Materials	1	0
231	2004	類人眼光偵測器的模擬與製程最佳化	林浩雄
232	2004	砷銻化鎵第二型量子元件技術	林浩雄
233	2004	Shrinkable triple self-aligned field-enhanced split-gate flash memory	Chu, Wen-Ting; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN	IEEE Transactions on Electron Devices	23	19
234	2004	Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory	Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN	IEEE Electron Device Letters	1	1
235	2004	Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers	M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO ; HAO-HSIUNG LIN	Optical and Quantum Electronics	4	4
236	2004	砷銻化銦中紅外線材料與元件(1/2)	林浩雄
237	2004	High SCR design for one-transistor split-gate full-featured EEPROM	Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN	IEEE Electron Device Letters	4	4
238	2004	Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy	T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; HAO-HSIUNG LIN	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures	16	15
239	2004	Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells	T. T. Chen; W. S. Su; P. W. Liu; HAO-HSIUNG LIN ; YANG-FANG CHEN	Applied Physics Letters	10	7
240	2004	GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes	H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN	MBE Taiwan
241	2004	Growth of InAs quantum dots with light emission at 1.3 m	F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN	MBE Taiwan
242	2004	1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy	P. W. Liu; G. H. Liao; H. H. Lin; HAO-HSIUNG LIN	Electronics Letters.	6	4
243	2004	Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy	Chang, F.Y.; Lee, J.D.; Lin, H.H.; HAO-HSIUNG LIN	Electronics Letters	7	6
244	2004	Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy	C. M. Lai; F. Y. Chang; G. J. Jan; HAO-HSIUNG LIN	Japanese Journal of Applied Physics	0	0
245	2004	MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications	G. Tsai,; H. H. Lin; HAO-HSIUNG LIN	OPT 2004
246	2004	Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers	G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN	2004 IEDMS
247	2004	Study on high-power resonant-cavity light-emitting diodes	L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN	OPT 2004
248	2004	Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm	F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN	2004 IEDMS
249	2004	Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection	C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN	OPT2004
250	2004	1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy	Liu, P.-W.; Liao, G.-H.; HAO-HSIUNG LIN	Electronics Letters	6	4
251	2004	Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations	Hang, D.R.; D. K. Shih; C. F. Huang; W. K. Hung; Y. H. Chang; HAO-HSIUNG LIN ; YANG-FANG CHEN	Physica E: Low-Dimensional Systems and Nanostructures	8	7
252	2003	Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures	Y. M. Chang,; N. A. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN	The 5th Pacific Rim Conference on Lasers and Electro-Optics	0	0
253	2003	PDIC 用光偵測器之量測、模擬與製程最佳化	林浩雄
254	2003	子計畫一：砷銻化鎵第二型量子井的成長與元件技術	林浩雄
255	2003	前瞻性量子元件技術	林浩雄
256	2003	InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers	D.-K. Shih; Y.-H. Lin; K.-H. Chiang; HAO-HSIUNG LIN	The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003	1	0
257	2003	1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties	M.-H. Mao; T.-Y. Wu; F.-Y. Chang; H.-H. Lin; HAO-HSIUNG LIN	The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003.	0	0
258	2003	Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique	M.-H. Mao; D.-M. Yeh; P.-W. Liu; H.-L. Chen; C.-T. Pan; HAO-HSIUNG LIN	The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003	0	0
259	2003	GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser	Lin, Hao-Hsiung ; Liu, Po-Wei; Chen, Jhe-Ren	Optoelectronics	0	0
260	2003	GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser	H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN	Sixth Chinese Optoelectronics Symposium	0	0
261	2003	Temperature dependence of photoreflectance in InAs/GaAs quantum dots	C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN	Applied Physics Letters	18	18
262	2003	Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applications	Shih, D.K.; Lin, Y.H.; HAO-HSIUNG LIN	IEE Proceedings: Optoelectronics	8	8
263	2003	Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells	T. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN ; YANG-FANG CHEN	Journal of Applied Physics	15	15
264	2003	Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy	G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN	Journal of Electronic Materials	7	6
265	2003	Band Gap Reduction in InAsN Alloys	D. K. Shih; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN	Japanese Journal of Applied Physicsic	67	65
266	2003	Resonant-cavity light-emitting diodes with coupled cavity	L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN	Electron devices and materials symposium
267	2003	A study of optical properties of InGaAs/GaAs quantum dots	C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN	Journal of the Korean Physical Society
268	2003	Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells	H. P. Hsu; Y. S. Huang; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN	OPT’03
269	2003	GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers	H. H. Lin,; P. W. Liu,; G. H. Liao,; HAO-HSIUNG LIN	electron devices and materials symposium
270	2003	1.3m GaAsSb/GaAs single quantum well laser diode	G. H. Liao; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN	OPT’03
271	2003	InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy	F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN	Electron devices and materials symposium
272	2003	Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy	G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN	OPT’03
273	2003	Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance	Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung ; Chen, Ming-Ching	Japanese Journal of Applied Physics	3	3
274	2003	Effect of ingaas capping layer on the properties of InAs/InGaAs quantum dots and lasers	Chang, F.Y.; HAO-HSIUNG LIN ; CHUNG-CHIH WU	Applied Physics Letters	54	47
275	2003	Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers	Sung, L.W.; HAO-HSIUNG LIN	Applied Physics Letters	49	44
276	2003	Optical Properties of InAs1–xNx/In0.53Ga0.47As Single Quantum Wells Grown by Gas Source Molecular Beam Epitaxy	Chen, Guan-Ru; Lin, Hao-Hsiung ; Wang, Jyh-Shyang; Shih, Ding-Kang	Journal of Electronic Materials
277	2003	Optical Studies of InAs/GaAs and Ge/Si Quantum Dot Structures	Jan, G.J.; Lai, C.M.; Chang, F.Y.; Perng, Y.H.; Chang, C.W.; Kao, C.H.; Jan, I.C.; Lin, H.H.; HAO-HSIUNG LIN	Proceedings of SPIE - The International Society for Optical Engineering	0	0
278	2003	Femtosecond carrier dynamics in InGaAsN single quantum well	Hsieh, C.-L.; Liu, T.-M.; Tien, M.-C.; Sung, L.-W.; Sun, Chi-Kuang ; Lin, Hao-Hsiung	CLEO/Pacific Rim 2003	0	0
279	2002	Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser	P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN	The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society	0	0
280	2002	Growth and characterization of low-threshold 1.3μm GaAsSb quantum well laser	Liu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung	The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society
281	2002	Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy	Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung; Chen, Jhe-Ren; Lin, Hao-Hsiung	Electronics Letters	17	16
282	2002	Novel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers	Lee, Ching-Ting; Lee, Hsin-Ying; Lin, Hao-Hsiung	Japanese Journal of Applied Physics	0	0
283	2002	奈米結構光電元件之研究-子計畫一:含銻化合物半導體光電元件技術之研究	林浩雄
284	2002	奈米結構光電元件之研究— 總計畫	林浩雄
285	2002	光纖通訊應用光電元件製作及數值模擬-子計畫四:含氮化合物半導體的磊晶成長與元件應用	林浩雄
286	2002	Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE	L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN	Journal of Crystal Growth	13	11
287	2002	GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs	W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN	Electronics Letters	1	1
288	2002	Low-threshold ~1.3m GaAsSb quantum well laser	P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN	2002 IEDMS
289	2002	Optical characterization on InAs/GaAs quantum dots	C. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN	2002 IEDMS
290	2002	Raman scattering characterization of InAsN bulk film on (100) InP substrates	D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN	2002 IEDMS
291	2002	1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE	L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN	2002 IEDMS
292	2002	1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE	L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN	OPT’02
293	2002	Structural properties and Raman modes of InAsN bulk films on (100) InP substrates	D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN	OPT’02
294	2002	1.3m InAs/InGaAs quantum dot lasers grown by GSMBE	F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN	2002 IEDMS
295	2002	Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE	Sung, Li-Wei; Lin, Hao-Hsiung ; Chia, Chih-Ta	Journal of Crystal Growth	13	11
296	2002	GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs	Wu, Wen-Chieh; Lin, Hao-Hsiung	Electronics Letters
297	2002	Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x	Hung, W.K.; Cho, K.S.; Chern, M.Y.; Chen, Y.F.; Shih, D.K.; Lin, H.H.; Lu, C.C.; Yang, T.R.; HAO-HSIUNG LIN ; YANG-FANG CHEN ; MING-YAU CHERN	Applied Physics Letters	27	21
298	2002	Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds	Chiu, Y.S.; Ya, M.H.; Su, W.S.; Chen, T.T.; HAO-HSIUNG LIN ; YANG-FANG CHEN	Applied Physics Letters	5	5
299	2002	Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP	Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; YANG-FANG CHEN	Applied Physics Letters	8	7
300	2002	V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE	L. W. Sung,; H. H. Lin,; C. T. Chia,; HAO-HSIUNG LIN	2001 MRS Fall Meeting	0	0
301	2002	Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well	Hang, D.R.; Huang, C.F.; Hung, W.K.; Chang, Y.H.; Chen, J.C.; Yang, H.C.; Chen, Y.F.; Shih, D.K.; Chu, T.Y.; Lin, H.H.; YUAN-HUEI CHANG ; HAO-HSIUNG LIN ; YANG-FANG CHEN	Semiconductor Science and Technology	12	7
302	2001	(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications	S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN	IEEE Transactions on Electron Devicess
303	2001	(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power Applications	Yang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung ; Kuo, Jenn-Ming	IEEE Transactions on Electron Devices
304	2001	InAsN Grown by Plasma-assisted Gas Source MBE	D. K. Shih,; H. H. Lin,; T. Y. Chu,; T. R. Yang,; HAO-HSIUNG LIN	2001 MRS Fall meeting, Symposium H
305	2001	High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs	H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN	IEICE Transactions on Electronics		4
306	2001	Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy	J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
307	2001	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m	Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN	Electronics Letters	33	37
308	2001	Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells	G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN	Journal of Applied Physics	4	3
309	2001	Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells	C. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN	Chinese Journal of Physics	4	4
310	2001	以分子束磊晶法成長氮化鎵系列材料（三）	林浩雄
311	2001	氮砷化銦塊材材料及分子束磊晶成長銻化鎵研究	林浩雄
312	2001	集總常數補償式高低通平衡至不平衡轉換器	HAO-HSIUNG LIN ; 邱煥凱; 林浩雄
313	2001	背靠背式雙波長半導體雷射元件	HAO-HSIUNG LIN ; 洪儒菘; 林浩雄
314	2001	Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy	Chang, Chin-An; HAO-HSIUNG LINet al.	Journal of Crystal Growth	2	2
315	2001	Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE	L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN	Optics and Photonics Taiwan	13	11
316	2001	Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well	P. W. Liu; H. H. Lin; HAO-HSIUNG LIN	Optics and Photonics Taiwan '01
317	2001	On the InAs(N)/InGaAs quantum wells	T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN	2001 Electronics Devices and Materials Symposia
318	2001	Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE	D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN	Middle Infrared Coherent Sources MICS’01 International Workshop
319	2001	Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well	M. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN	2001 Electron Devices and Materials Symposia
320	2001	Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications	Yang, S.-C.; Chiu, H.-C.; Chan, Y.-J.; Lin, H.-H.; Kuo, J.-M.; HAO-HSIUNG LIN	IEEE Transactions on Electron Devices	7	6
321	2001	Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells	Chen, Guan-Ru; Lin, Hao-Hsiung ; Wang, Jyh-Shyang; Shih, Ding-Kang	Journal of Applied Physics
322	2001	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm	Shih, Ding-Kang; Lin, Hao-Hsiung ; Lin, Y.H.	Electronics Letters
323	2001	Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy	Wang, Jyh-Shyang; Lin, Hao-Hsiung ; Song, Li-Wei; Chen, Guan-Ru	Journal of Vacuum Science & Technology	27	23
324	2000	以分子束磊晶法成長氮化鎵系列材料(II)	林浩雄
325	2000	新型光電材料、元件及雷射光源( II) - 子計劃四: 半導體體光電材料及元件之研究四	林浩雄
326	2000	Growth and characterization of InAsN alloys	Wang, Jyh-Shyang; Lin, Hao-Hsiung ; Sung, Li-Wei; Chen, Guan-Ru	2000 International Conference on Indium Phosphide and Related Materials	0	0
327	2000	GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer	Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung	Materials Science and Engineering B	2	1
328	2000	Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well	Fan, J.C.; Hung, W.K.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; JEN-CHEN FAN ; YANG-FANG CHEN	Physical Review B - Condensed Matter and Materials Physics	21	20
329	1999	Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy	K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; HAO-HSIUNG LIN	Physica B: Condensed Matter	1	2
330	1999	Light emission and detection by metal oxide silicon tunneling diodes	C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN	1999 IEDM	0	0
331	1999	Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy	J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN	Journal of Crystal Growth	3	2
332	1999	以分子束磊晶法成長氮化鎵系列材料(I)	林浩雄
333	1999	三五族半導體光電材料及元件之研究(I)	林浩雄
334	1999	Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN	Optics and Photonics/Taiwan'99
335	1999	Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy	Wang, Jyh-Shyang; Lin, Hao-Hsiung; HAO-HSIUNG LIN	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures	24	23
336	1999	Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells	G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN	Optics and Photonics/Taiwan'99
337	1999	InAsN quantum wells grown on InP by gas source MBE	J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN	3rd international conference on mid-infrared optoelectronics materials and devices
338	1999	1.55m asymmetric coupled quantum well structure for laser-modulator integration	L. W. Sung; J. S. Wang; H. P. Shiao; C. Y. Wang; I. F. Jang; T. T. Shih; Y. K. Tu; H. H. Lin; HAO-HSIUNG LIN	1999 Electron Devices and Materials Symposia
339	1999	InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN	1999 Electron Devices and Materials Symposia
340	1999	Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance	YANG-FANG CHEN ; D. Y. Lin; Y. S. Huang; M. C. Chen; HAO-HSIUNG LIN ; JEN-CHEN FAN	Journal of Applied Physics	3	3
341	1999	Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy	Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung	Journal of Crystal Growth	3	2
342	1998	Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy	Chen, Ming-Chin; Liao, M. C.; Lin, Hao-Hsiung	Journal of Crystal Growth	4	4
343	1998	Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy	Chen, M.-C.; Lin, H.-H.; Shie, C.-W.; HAO-HSIUNG LIN	Journal of Applied Physics	12	9
344	1998	光電材料,元件及現象─子計畫四：三五族半導體光電材料及元件之研究	林浩雄
345	1998	An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor	Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung	Superlattices and Microstructures	7	7
346	1998	Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum well	Kang, J.U.; Khurgin, J.B.; Yang, C.C.; Lin, H.H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN	Applied Physics Letters	9	7
347	1998	Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy	Chan, C.H.; Chen, M.C.; Lin, H.H.; Chen, Y.F.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN	Applied Physics Letters	23	24
348	1998	Very thin layers of TIP grown on InP using gas source molecular beam epitaxy	Liu, J.-S.; Wang, J.-S.; HAO-HSIUNG LIN	Journal of Crystal Growth	1	2
349	1998	Photoconductivity in self-organized InAs quantum dots	Fan, J.C.; Lin, Y.J.; Chen, Y.F.; Chen, M.C.; HAO-HSIUNG LIN ; YANG-FANG CHEN	Journal of Applied Physics	7	7
350	1998	Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes	Chan, C.H.; Chen, Y.F.; Chen, M.C.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN	Journal of Applied Physics	9	9
351	1998	Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs	Kuo, C.W.; Su, Y.K.; Tsia, C.Y.; HAO-HSIUNG LIN	Solid-State Electronics	7	6
352	1998	Very thin layers of TlP grown on InP using gas source molecular beam epitaxy	Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung	Journal of Crystal Growth
353	1998	半導體工程人才培育計畫─子計畫一:半導體材料製程量測實驗課程改進研究(3/3)	林浩雄
354	1998	Temperature dependence of photoreflectance study on InAs/GaAs self-assembled quantum dots	Jan, G.J.; Chang, S.M.; Lai, C.M.; Chen, M.C.; Lin, H.H.; HAO-HSIUNG LIN	Proceedings of SPIE - The International Society for Optical Engineering	0	0
355	1998	Room-temperature 2.2-μM InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy	Wang, J.-S.; Lin, H.-H.; Sung, L.-W.; HAO-HSIUNG LIN	IEEE Journal of Quantum Electronics	30	33
356	1997	Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy	Chen, Ming-Chin; Lin, Hao-Hsiung	1997 IEEE International Symposium on Compound Semiconductors	0	0
357	1997	Lumped-Element Compensated High/Low-Pass Balun Design for MMIC Double-Balanced Mixer	Chiou, Wann-Kaeo; Lin, Hao-Hsiung ; Chang, Chi-Yang	IEEE Microwave and Guided Wave Letters
358	1997	A Miniature MMIC Double Doubly Balanced Mixer Using Lumped Dual Balun for High Dynamic Receiver Application	Chiou, Hwann-Kaeo; Lin, Hao-Hsiung	IEEE Microwave and Guided Wave Letters
359	1997	Miniature MMIC star double balanced mixer using lumped dual balun	Chiou, Hwann-Kaeo; Juang, Yu-Ru; Lin, Hao-Hsiung	Electronics Letters	13	11
360	1997	Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor. A subpicosecond Raman probe	Tsen, K.T.; Ferry, D.K.; Wang, J.-S.; Huang, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN	Physica Status Solidi (B) Basic Research	0
361	1997	用分子束磊晶法成長夜視材料及光陰極件（III）	林浩雄
362	1997	半導體工程人材培育計畫─半導體工程人才培育計畫:子計畫一:半導體材料製程量測實驗課程改進研究(II)	林浩雄
363	1997	Photoreflectance study of barrier-width dependence of above-barrier states in GaAs-AlxGa1-xAs multiple quantum wells	YANG-FANG CHEN ; HAO-HSIUNG LIN	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	1	1
364	1997	Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors	Tsai, J.-H.; Cheng, S.-Y.; Lour, W.-S.; Liu, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN	Semiconductor Science and Technology	13	13
365	1997	A miniature MMIC double doubly balanced mixer using lumped dual balun for high dynamic receiver application	Chiou, H.-K.; Lin, H.-H.; HAO-HSIUNG LIN	IEEE Microwave and Guided Wave Letters	17	12
366	1997	Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses	Dai, Y.T.; Fan, J.C.; Chen, Y.F.; Lin, R.M.; Lee, S.C.; YANG-FANG CHEN ; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	126	122
367	1997	半導體光電現象及應用（II）─子計畫三：磷砷化銦鎵光電材料及元件之研究	林浩雄
368	1997	Pump-probe studies of carrier capture processes in semiconductor multiple-quantum-well waveguides	JIAN-JANG HUANG ; DING-WEI HUANG ; Chao, Chung-Yen; Li, Jiun-Haw; CHIH-CHUNG YANG ; Chen, Ming-Ching; HAO-HSIUNG LIN	IEEE Photonics Technology Letters	0	0
369	1997	Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy	Hwang, J.S.; Chou, W.Y.; Hung, M.C.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN	Journal of Applied Physics	15	12
370	1997	Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer	Chiou, H.-K.; Lin, H.-H.; Chang, C.-Y.; HAO-HSIUNG LIN	IEEE Microwave and Guided Wave Letters	45	0
371	1996	An unified GSMBE growth model for GaInAsP on InP and GaAs	Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung	Eighth International Conference on Indium Phosphide and Related Materials, 1996. IPRM '96	0	0
372	1996	Gas source molecular beam epitaxial growth model for Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> on GaAs	Liu, J.-S.; Lee, T.-L.; Lin, H.-H.; HAO-HSIUNG LIN	Optical and Quantum Electronics	1	1
373	1996	A study of the dark currents of InSb charge injection devices	Sun, T.P.; Liao, R.H.; Wang, C.H.; Hong, H.M.; Chang, H.; Wu, C.W.; Liu, J.S.; Lin, H.H.; HAO-HSIUNG LIN	Optical and Quantum Electronics	0	0
374	1996	On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)	Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung	Solid-State Electronics	10	10
375	1996	Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy	Lee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung	Solid-State Electronics	3	3
376	1996	Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors	Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung ; Huang, Chao-Hsing	Solid-State Electronics	0	0
377	1996	Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor	Tsen, K.T.; Ferry, D.K.; Wang, J.-S.; Huang, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN	Applied Physics Letters	11	10
378	1996	半導體光電現象及應用整合計畫:子計畫三磷砷化銦鎵光電材料及元件之研究	林浩雄
379	1996	半導體工程人材培育計畫─半導體工程人才培育計畫:子計畫一:半導體材料製程量測實驗課程改進研究	林浩雄
380	1996	半導體光電現象及應用─半導體光電現象及應用-子計畫三:磷砷化銦鎵光電材料及元件之研究 I	林浩雄
381	1996	用分子束磊晶法成長夜視材料及光陰極元件（Ⅱ）	林浩雄
382	1996	Incorporation of group V elements in Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> grown by gas source molecular beam epitaxy	Lee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN	Journal of Electronic Materials	3	3
383	1995	Balun design for uniplanar broad band double balanced mixer	Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung	Electronics Letters	29	29
384	1995	A novel coplanar waveguide series stub matching structure for a broadband amplifier	Chiou, H.?K.; Chang, C.?Y.; Lin, H.?H.; HAO-HSIUNG LIN	Microwave and Optical Technology Letters	0	0
385	1995	The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy	Lee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN	Journal of Crystal Growth	5	5
386	1995	Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs	Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung	Solid-State Electronics	8	4
387	1995	砷化銦鎵異質接面雙極電晶體及其在光接收器上的應用	林浩雄
388	1995	Birefringence of Passive Multi-Quantum-Well Semiconductor Slab Waveguides	Yang, C.C.; Kang, J.; Stegeman, G.I.; Huang, C.-H.; Li, D.-U.; Lin, H.-H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN	IEEE Photonics Technology Letters	9	9
389	1995	Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance	Chen, Y.F.; Dai, Y.T.; Fan, J.C.; Lee, T.L.; JEN-CHEN FAN ; YANG-FANG CHEN ; HAO-HSIUNG LIN	Applied Physics Letters	14	12
390	1995	氣態源分子束磊晶法選擇成長技術之研究	林浩雄
391	1995	Erratum: Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance" (Applied Physics Letters (1995) 66 (2543))	YANG-FANG CHEN ; Shen, J.L.; Dai, Y.D.; Jan, G.J.; HAO-HSIUNG LIN	Applied Physics Letters	0	0
392	1995	Gas Source MBE Growth of InP Under In-Rich Conditions	Lee, T. L.; Liu, J. S.; 林浩雄 ; Lin, Hao-Hsiung	1994 International Electron Devices and Materials Symposium
393	1995	Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers	Chen, K.L.; Lin, H.H.; Jan, G.J.; Chen, Y.H.; Tseng, P.K.; HAO-HSIUNG LIN	Journal of Applied Physics	5	6
394	1995	Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance	Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; YANG-FANG CHEN ; HAO-HSIUNG LIN	Applied Physics Letters	5	5
395	1994	Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures	Hwang, J. S.; Tyan, S. L.; Chou, W. Y.; Lee, M. L.; Weybume, D.; Hang, Z.; Lee, T. L.; Chou, W. Y.; Weybume, D.; Hang, Z.; Lin, Hao-Hsiung ; Lee, T. L.	Applied Physics Letters	17	18
396	1994	ＯＥＩＣ用高速元件之研究	林浩雄
397	1994	AlGaAs for Nonlinear Optics at 1550 nm	Villeneuve, A.; Aitchison, J. S.; Al-Hemyari, K.; Ironside, C. N.; Yang, C. C.; Lin, C. H.; 林浩雄 ; Stegeman, G. I.; Aitchison, J. S.; Ironside, C. N.; Lin, Hao-Hsiung ; Stegeman, G. I.	SPIE's 1993 Quebec International Symposium on Holography, Microstructure, and Laser Technologies
398	1994	Room-Temperature Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas	Chen, Y.-H.; Hsu, K.-T.; Chen, K.-L.; Jan, G.-J.; HAO-HSIUNG LIN	Japanese Journal of Applied Physics	12	10
399	1994	P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature	Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN	IEEE Electron Device Letters	48	43
400	1994	OEIC用高速元件之研究	Lin, Hao-Hsiung
401	1994	Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor	Hsu, K.T.; Chen, Y.H.; Chen, K.L.; Chen, H.P.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN	Applied Physics Letters	20	20
402	1994	Gas source MBE growth of InP under in-rich conditions	Lee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN	1994 International Electron Devices and Materials Symposium, EDMS 1994	0	0
403	1994	Effects of conduction band discontinuity and two dimensional electron gas on the DC characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's	Huang, C.-H.; Lee, T.-L.; Lin, H.-H.; HAO-HSIUNG LIN	1994 International Electron Devices and Materials Symposium, EDMS 1994	0	0
404	1994	Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung	IEEE Journal of Quantum Electronics
405	1994	砷化銦鎵砷化鎵應變壓電效應之研究	林浩雄
406	1994	Effects of Conduction Band Discontinuity and Two Dimentional Electron Gas on the DC Characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's	Huang, Chang-Hsiu; Lee, T. L.; 林浩雄 ; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung	1994 International Electron Devices and Materials Symposium
407	1994	Current Transport in Charge Injection Devices	Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung	SPIE International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Application	0	0
408	1994	Birefringence of Passive Semiconductor Slab Waveguides	Li, D. U.; Huang, Chang-Hsiu; 張宏鈞 ; 林浩雄 ; Yang, C. C.; Kang, J.; Stegeman, G. L.; Li, D. U.; Huang, Chang-Hsiu; Chang, Hung-Chun ; Lin, Hao-Hsiung ; Kang, J.; Stegeman, G. L.	Ultrfast Optics and Applications Conference
409	1994	Photoreflectance Characterization of an InAlAs/InGaAs Heterojunction Bipolar Transistor	Lin, Hao-Hsiung ; Chang, Chien-Cheng; Hsu, K. T.; Chen, Y. H.; Chen, K. L.; Chen, H. P.; ?��???:rp07554; ?��??	Applied Physics Letters
410	1993	Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, Alain; Stegeman, George I.; Lin, Cheng Hui; HAO-HSIUNG LIN	Optics InfoBase Conference Papers	0
411	1993	Effects of Dispersive Two-Photon Transitions on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, Cheng Hui; HAO-HSIUNG LIN	Optics InfoBase Conference Papers	0
412	1993	Nonlinear Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Chiou, I. P; Yang, C. C.; Stegeman, G. I.; Lin, Hao-Hsiung	Optics Letters	7	10
413	1993	Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well Waveguides	Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN	IEEE Journal of Quantum Electronics	25	21
414	1993	High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy	Huang, Chen-Chih; Lin, Hao-Hsiung	Solid-State Electronics	1	0
415	1993	Effects of dispersive two-photon transitions on femtosecond pulse propagation in semiconductor waveguides	Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; Yang, C. C.; Villeneuve, A.; CHIH-CHUNG YANG ; 林浩雄	Applied Physics Letters	11	10
416	1993	Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy	Chen, M. K.; Chang, T. C.; 林浩雄 ; Chang, T. C.; Lin, Hao-Hsiung	Journal of Applied Physics	3	5
417	1993	Injection Current Model of a MOS Diode under Charge-Sharing Mode Readout Operation	Wu, C.-W.; Lin, H.-H.; HAO-HSIUNG LIN	IEEE Transactions on Electron Devices	0	0
418	1993	Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Villeneuve, A.; Lin, Hao-Hsiung	Integrated Photonics Research Topical Meeting
419	1993	Dark Current Analysis of InSB MIS Capacitors	Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung	19th EDMS
420	1993	砷化銦鋁鎵光偵測器及光接收器之研究	林浩雄
421	1993	Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP	Chen, M. K.; 林浩雄 ; Chen, M. K.; Lin, Hao-Hsiung	Journal of Vacuum Science & Technology. B
422	1993	砷化鋁鎵異質接面雙極電晶體積體化技術之研究:重點研究群子計劃之二	林浩雄
423	1993	Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung	Electronics Letters
424	1993	Nonlinear Refractive-Index Near Half the Band Gap in AlGaAs	Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung	Applied Physics Letters
425	1993	Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation	Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung	IEEE Electronics Device
426	1993	Nonlinear refractive-index and two photon-absorption near half the band gap in AlGaAs	Villeneuve, A.; Yang, C.C.; Stegeman, G.I.; Lin, C.-H.; HAO-HSIUNG LIN ; CHIH-CHUNG YANG	Applied Physics Letters	84	79
427	1993	Deep Level Analysis of MBE Grown InAlAs Strained Layers	Liu, J. S.; Lee, T. L.; 林浩雄 ; Wu, C. W.; Lin, Hao-Hsiung	19th EDMS
428	1993	On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver	Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄 ; Tu, Y. K.; Tu, C. H.; Lin, Hao-Hsiung	19th EDMS
429	1993	DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors	Huang, Chang-Hsiu; Lee, T. L.; 林浩雄 ; Lin, Hao-Hsiung	The 5th International Conference on InP and Related Material
430	1993	Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung	Conference on Lasers and Electro-Optics
431	1993	Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications	Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung	International Conference on Nonlinear Optical Physics and Applications
432	1993	Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung	Nonlinear Guided-Wave Phenomena
433	1993	AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy	Lee, T. L.; Chu, W. D.; 林浩雄 ; Lin, Hao-Hsiung	19th EDMS
434	1993	Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode	Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄 ; Tu, C. H.; Huang, Chang-Hsiu; Lin, Hao-Hsiung	19th EDMS
435	1993	On the High Frequency Properties of InGaAs Bipolar Transistors	Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄 ; Lin, C. H.; Lin, Hao-Hsiung	19th EDMS
436	1993	Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors	Huang, Chang-Hsiu; Lin, C. H.; 林浩雄 ; Huang, Chang-Hsiu; Lin, Hao-Hsiung	19th EDMS
437	1993	InAlAs/InGaAs異質接面雙極電晶體之研究	林浩雄
438	1993	Two-dimensional calculation on the band-to-band tunneling current of iridium antimonide charge injection devices	Wu, C.-W.; Lin, H.-H.; HAO-HSIUNG LIN	SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation	0	0
439	1993	Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguide	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung	Integrated Photonics Research Topical Meeting
440	1993	Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices	Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung	1993 Symposium on Semiconductor Modeling and Simulation
441	1993	Measurements of two-photon absorption coefficient and induced nonlinear refractive-index in GaAs/AlGaAs multiquantum well waveguides	Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN	Electronics Letters	18	13
442	1993	Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors	Huang, Chao-Hsing; Lin, Hao-Hsiung	Solid-State Electronics	11	11
443	1992	High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy	Lin, Hao-Hsiung ; Huang, Chao-Hsing	Fourth International Conference on Indium Phosphide and Related Materials	0	0
444	1992	Novel In0·41Ga0·59As/In0·53Ga0·47 as strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy	Huang, C.C.; HAO-HSIUNG LIN	Electronics Letters	0	1
445	1992	Studies of Low-Surface 2-KT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar Transistors	Wu, Chung Cheng; Ting, Jing-Lung; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung	Journal of Applied Physics
446	1992	High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy	Wu, Chung Cheng; Lee, Si-Chen ; Lin, Hao-Hsiung	Japanese Journal of Applied Physics	2	1
447	1992	Stress-Induced Outdiffusion of Be in P+ GaAs Prepared by Molecular Beam Epitaxy	Liu, Biing-Der; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen ; Lin, Hao-Hsiung	Journal of Applied Physics	5	5
448	1992	生物能場本質之研究	林浩雄 ; 李嗣涔
449	1992	Anisotropic Two-Photon Transitions in GaAs/AlGaAs Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, Hao-Hsiung	Nonlinear Optics:Materials, Fundamentals, and Applications, 2nd Topica Meeting(NONLINEAR OPTICS:MAT)
450	1992	氣功態分類及外氣的性質	林浩雄 ; 李嗣涔
451	1992	Effect to Two-Dimensional Electron Gas on the DC Characteristics of InAlAs/InGaAs Double Heterojunction Bipolar Transistor	Huang, Chang-Hsiu; 林浩雄 ; Lin, Hao-Hsiung	1992 International Electron Devices and Materials Symposium
452	1992	Current Transport Characteristics of P+/N AlxGa1-XAs Homojunction Diode	林浩雄 ; Liu, Y. S.; Lin, Hao-Hsiung	Journal of Applied Physics
453	1992	Novel CID Emulator for InSb Array	Wu, C. W.; Wu, W. J.; 林浩雄 ; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; Pang, Y. M.; 楊聲震; Wu, C. W.; Lin, Hao-Hsiung ; Liu, Kou-Chen; Sun, Tai-Ping; Yang, Seng-Jenn	SPIE OE/Aerospace sensing symposium
454	1992	Infrared Detector Using Heavily Be-Doped GaAs	Shieh, T. H.; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔 ; 林浩雄 ; Shieh, T. H.; Wu, Ming-Yen; Lee, Si-Chen ; Lin, Hao-Hsiung	17th EDMS
455	1992	Effect of Hydrogen Passivation on Lightly N-Doped GaAs	Chen, C. J.; Chang, Y. H.; Chen, T. C.; Li, S. H.; Chen, Y. F.; 林浩雄 ; Chen, T. C.; Li, S. H.; Chen, Y. F.; Lin, Hao-Hsiung	5th International Conference on Shallow Impurity in Semiconductors
456	1992	Preparation and Properties of Lattice-Matched InAlAs and InAlGaAs Epilayers on (100) InP	Lee, T. L.; 林浩雄 ; Lin, Hao-Hsiung	1992 International Electron Devices and Materials Symposium
457	1992	InAlAs/InGaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy	Lin, Hao-Hsiung	Annual Meeting of the Chinese Physics Association
458	1991	砷化鋁鎵異質接面雙極電晶體積體化技術之研究	林浩雄
459	1991	Two-Dimensional Simulation of the Electric Field Spike of Indium Antimonide Charge Injection Devices	Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung	Solid State Electronics
460	1991	A Study on the Fabrication of AlGaAs/GaAs Nonabsorption Mirror Laser Diode	Cheng, S. J.; 林浩雄 ; Cheng, S. J.; Lin, Hao-Hsiung	17th EDMS
461	1991	砷化鋁鎵異質接面雙極電晶體積體化技術之研究（重點研究群子計畫之二）	林浩雄
462	1991	Current transport characteristics of P+/N Al<inf>x</inf>Ga<inf>1-x</inf>As homojunction diodes	Lin, H.-H.; Liu, Y.-S.; HAO-HSIUNG LIN	Journal of Applied Physics	3	3
463	1991	In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax	Chen, M. K.; 李嗣涔 ; 林浩雄 ; Chen, M. K.; Lee, Si-Chen ; Lin, Hao-Hsiung	The 17th EDMS
464	1991	InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy	Huang, Chang-Hsiu; Chen, M. K.; 林浩雄 ; Huang, Chang-Hsiu; Lin, Hao-Hsiung	17th EDMS
465	1991	Reactive Ion Etching of GaAs Using CCl2F2 Plasma	Hsu, S. M.; 林浩雄 ; Lin, Hao-Hsiung	17th EDMS
466	1991	Heavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector	Liu, P. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔 ; 林浩雄 ; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen ; Lin, Hao-Hsiung	The 1991 International Conference on Solid State Devices and Materials
467	1991	Study on the Charge Transient Spectroscopy of Au/Cr/Sio2/N-Insb MIS Capacitor	Wu, C. W.; 林浩雄 ; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Wu, C. W.; Lin, Hao-Hsiung ; Lin, J. H.; Yang, Seng-Jenn	17th EDMS
468	1991	AlGaAs/GaAs Heterojunction Bipolar Transistors with High Current Gain Grown by Molecular Beam Epitaxy	Wu, Chien-Hsing; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung	17th EDMS
469	1991	Current Transport Characteristics Of P+/N-AlxGa1-xAs Homojunction Diode	林浩雄 ; Liu, Y. S.; Lin, Hao-Hsiung ; Liu, Y. S.	1990 International Electron Devices and Materials Symposium
470	1991	Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on Inp	Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung	17th EDMS
471	1990	AlGaAs/GaAs Heterojunction Bipolar Transistors	Lin, Hao-Hsiung	The 6th RSA/ROC Binational Symposium, Electronic Materials and Devices
472	1990	Abrupt Heterointerfaces in Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy	Chen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Lee, J. H.; Lee, Si-Chen ; Lin, Hao-Hsiung	Journal of Applied Physics
473	1990	Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors	Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	5	5
474	1990	The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor	Lee, Si-Chen ; Lin, Hao-Hsiung	1990 International Electron Devices and Materials Symposium
475	1990	Two-dimensional simulation on the electric field spike of indium antimonide charge injection devices	Wu, Chao-Wen; Lin, Hao-Hsiung	Solid-State Electronics
476	1990	P-Al0.2Ga0.8As/n-Al0.05Ga0.95As/Au Schottky Collector Heterojunction Bipolar Transistor with a Design of High Bandgap Extrinsic Base	Chen, M. C.; 林浩雄 ; Lin, Hao-Hsiung	1990 International Electron Devices and Materials Symposium
477	1990	Single and Mulitiple AlGaAs Quantum-Well Structures Grown by Liquid-Phase Epitaxy	Chen, J. A.; Wang, Cheng-Kun; 林浩雄 ; 王維新; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen	Journal of Applied Physics
478	1990	雷射二極體技術之研究(四)量子井雷射	林浩雄
479	1990	Model for Vision Illusion and Its Application to Pattern Representation	Lin, Hao-Hsiung ; Lee, Si-Chen	1989 Telecommunications Symposium
480	1990	臺大電機系化合物半導體三年研究發展計畫(二)	李嗣涔 ; 林浩雄
481	1990	Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy	Chen, J.-A.; Wang, C.-K.; Lin, H.-H.; Wang, W.-S.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	4	4
482	1989	Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Reflective Diffraction Coupler	Lay, T.-S.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	IEEE Journal of Quantum Electronics	1	0
483	1989	Abrupt heterointerfaces in Al <inf>0.35</inf> Ga <inf>0.65</inf> As/Al <inf>0.05</inf> Ga <inf>0.95</inf> As/Al <inf>0.35</inf> Ga <inf>0.65</inf> As quantum well structure grown by liquid-phase epitaxy	Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	5	3
484	1989	Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler	Lay, T. S.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung	IEEE Journal of Quantum Electronics
485	1989	Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's)	Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung	15th EDMS
486	1989	Minority-Carrier Lifetime Measurement Using an Al/SiO2/p-Si MOS Capacitor	林浩雄 ; Jih, H. J.; Lin, Hao-Hsiung ; Jih, H. J.	15th EDMS
487	1989	Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design	Ting, Jing-Lung; 林浩雄 ; 李嗣涔 ; Ting, Jing-Lung; Lin, Hao-Hsiung ; Lee, Si-Chen	15th EDMS
488	1989	Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy	Chen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Chen, J. A.; Lee, J. H.; Lee, Si-Chen ; Lin, Hao-Hsiung	Journal of Appllied Physics
489	1988	The hot electron effect in double heterojunction bipolar transistors: Theory and experiment	Chen, Chung-Zen; Lee, Si-Chen ; Lin, Hao-Hsiung	Solid-State Electronics	2	1
490	1988	Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy	Chen, J. A.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung	The 1988 International Electronic Devices and Materials Symposium
491	1988	The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source	劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; 劉志文 ; Chen, S. L.; Lay, J. P.; Lin, Hao-Hsiung	Applied Physics Letters
492	1988	砷化銦鋁鎵光電元件技術研究	林浩雄
493	1987	Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source	Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN	Applied Physics Letters	9	9
494	1987	Transport Theory of the Double Heterojunction Bipolar Transistor Based on Current Balancing Concept	Lee, Si-Chen ; Lin, Hao-Hsiung	Jouranl of Applied Physics
495	1987	The Hot Electron Effect in Double Heterojunction Bipolar Transistors:Theory and Experiment	Lee, Si-Chen ; Lin, Hao-Hsiung	13th EDMS
496	1987	Determine the Minority Carrier Lifetime in P/N Junction Diode Using the Lag Effect of a CID Emulator	Tseng, Y. H.; 林浩雄 ; Tseng, Y. H.; Lin, Hao-Hsiung	17th EDMS
497	1987	Design of AlGaAs Double Heterojunction Bipolar Transistors	Chen, C. Z.; 李嗣涔 ; 林浩雄 ; Chen, C. Z.; Lee, Si-Chen ; Lin, Hao-Hsiung	Journal of Applied Physics
498	1987	The Characteristics of Silane Doping of GaAs by MOCVD	劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; 劉志文 ; Chen, S. L.; Lin, Hao-Hsiung	13th EDMS
499	1987	Engineering on AlGaAs Double Heterojunction Bipolar Transistors	Chen, C. Z.; 李嗣涔 ; 林浩雄 ; Chen, C. Z.; Lee, Si-Chen ; Lin, Hao-Hsiung	Advanced Semiconductor Processing Technologies
500	1987	Design of n-p-n AlGaAs double-heterojunction bipolar transistors	Chen, C.-Z.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	4	3
501	1986	Current Transport Across the Emitter-Base Potential Spike in AlGaAs/GaA Heterojunction Bipolar Transistors	李嗣涔 ; Kau, J. N.; 林浩雄 ; Lee, Si-Chen ; Kau, J. N.; Lin, Hao-Hsiung	Journal of Applied Physics
502	1986	Determination of Alxga1-XAs Band Gap by Schottky Barrier Spectral Response Measurement	Lin, Hao-Hsiung ; Lee, Si-Chen	Journal of Chinese Institute Engineers
503	1986	Determination of the AlGaAs Bandgap by Spectral Response Measurement	Lin, Hao-Hsiung ; Lee, Si-Chen	Journal of the Chinese Institute of Engeneers
504	1986	Determination of augai-xas bandgap by schottky barrier spectral response measurement	Lin, H.-H.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an	0	0
505	1986	New Transport Theory of the Homo and Heterojunction Bipolar Transistors and Its Applications	李嗣涔 ; Chen, C. Z.; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung	Compound Semiconductor Science & Technology
506	1986	Evalution of DX-Center in Sn-Doped AlxGa1-xAs	Lee, H. C.; Lee, Si-Chen ; Lin, Hao-Hsiung ; Hwang, F. C.	The 12th EDMS
507	1986	Transport theory of the double heterojunction bipolar transistor based on current balancing concept	Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	40	37
508	1985	Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single-Heterojunction Binolar Transistors	Lin, H.-H.; SI-CHEN LEE ; HAO-HSIUNG LIN	IEEE Electron Device Letters	29	29
509	1985	AlGaAs/GaAs Oxide-Stripe Double-Heterostructure Lasers	Shieh, M. H.; 林浩雄 ; 李嗣涔 ; Chiou, Y. L.; Shieh, M. H.; Lin, Hao-Hsiung ; Lee, Si-Chen ; Chiou, Y. L.	Journal of Chinese Institute Engineers
510	1985	Super-Gain AlGaAs/GaAs Heterojunction Bipolar Transistors Using an Emitter Edge-Thinning Design	Lin, Hao-Hsiung ; Lee, Si-Chen	Applied Physics Letters	118	117
511	1985	AlGaAs/GaAs V-Groove Channeled Substrate Buried Heterostructure Laser Diodes	Chen, J. A.; 李嗣涔 ; 林浩雄 ; Chen, J. A.; Lee, Si-Chen ; Lin, Hao-Hsiung	Journal of Chinese Institute Engineers
512	1985	The Origin of High Offset Voltage in Heterojunction Bipolar Transistor	李嗣涔 ; Kau, J. N.; 林浩雄 ; Lee, Si-Chen ; Kau, J. N.; Lin, Hao-Hsiung	Applied Physics Letters
513	1985	An AIGaAs/GaAs oxide-stripe double-heterostructure laser	Shieh, M.-H.; Lin, H.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an	0	0
514	1985	AIGaAs/GaAs V-groove channeled substrate buried heterostructure laser diodes	Chen, J.-A.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an	0	0
515	1985	Theory on the AlGaAs Double Heterojunction Transistor	Lee, Si-Chen ; Lin, Hao-Hsiung	The 11th EDMS
516	1985	Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single Heterojunction Bipolar Transistors	Lin, Hao-Hsiung ; Lee, Si-Chen	IEEE Electron Device Letters
517	1985	AlGaAs/GaAs Single Heterojunction Bipolar Transistors with a Common Emitter Current Gain of 12,500	Lin, Hao-Hsiung ; Lee, Si-Chen	11th EDMS
518	1985	Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistors	Lee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN	Journal of Applied Physics	12	11
519	1984	AlGaAs/GaAs Stripe Geometry Double Heterstructure Lasers	Shieh, M. H.; Chen, J. A.; 林浩雄 ; 李嗣涔 ; Chiou, Y. L.; Shieh, M. H.; Chen, J. A.; Lin, Hao-Hsiung ; Lee, Si-Chen ; Chiou, Y. L.	Annual Meeting of the Chinese Material Science Association
520	1984	Dual Wavelength Photodetector and Its Application on Wavelength-Division Multiplexing Technology	Lin, Hao-Hsiung ; Lee, Si-Chen	1984 International Electronic Devices and Materials Symposium
521	1984	Determination of AlGaAs Γ15-Γ1 Band Gap Energy by Schottky Barrier Spectral Response Measurement	林浩雄 ; Lin, J. S.; Chiou, H. K.; 李嗣涔 ; Lin, Hao-Hsiung ; Lin, J. S.; Lee, Si-Chen	Annual Meeting of the Chinese Material Science Association
522	1984	An AlGaAs-GaAs dual Wavelength Photodetector with 500 埃 Resolution	李嗣涔 ; 林浩雄 ; Chiou, Y. L.; Lee, Si-Chen ; Lin, Hao-Hsiung	Solid State Electronics
523	1984	Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor	Lee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN	Applied Physics Letters	69	67
524	1983	The Forward Characterization of 50 Amperes Power Rectifier	Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo	9th EDMS
525	1983	AlGaAs-GaAs Dual-Wavelength Photodetectors for WDM Technologies	Lee, Si-Chen ; Lin, Hao-Hsiung	9th EDMS
526	1982	Breakdown Voltage of Junction Passivated Power Rectifier	林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo ; Chiou, Y. L.	8th EDMS
527	1981	Excess Leakage Current of a Rectifier Diode	Pai, P. L.; Hwang, C. C.; Chen, M. K.; 林浩雄 ; Chiou, Y. L.; Pai, P. L.; Hwang, C. C.; Chen, M. K.; Lin, Hao-Hsiung ; Chiou, Y. L.	7th EDMS
528	1981	High Frequency Characteristics of Some Thick Film Components	Chang, C. Y.; 林浩雄 ; 林浩雄 ; 王維新; 王維新; Chiou, Y. L.; Chang, C. Y.; Lin, Hao-Hsiung ; Lin, Hao-Hsiung ; Wang, Way-Seen; Wang, Way-Seen; Chiou, Y. L.; Chiou, Y. L.	7th EDMS
529	1980	An Improvement on the LPE Process for Growing P-AlGaAs on N-GaAs	Lin, Hao-Hsiung	6th EDMS
530	May	Effect of deposition method on the density of InAs/InGaAs quantum dot	Chang, Fu-Yu; Wu, T.C.; Lin, Hao-Hsiung; Lin, Hao-Hsiung	International Conference onIndium Phosphide and Related Materials	0	0
531	Dec	A fully integrated broadband amplifier with 161% 3-dB bandwidth	Wu, Wen-Chieh; Wang, Huei; Lin, Hao-Hsiung	Asia-Pacific Microwave Conference, 2001. APMC 2001	0	0
532	Apr	Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation	Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung ; Lin, Ching-Fuh	Applied Physics Letters	2	3
533	-	Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy	Talwar, Devki N.; Lin, Hao-Hsiung; Feng, Zhe Chuan; HAO-HSIUNG LIN	Journal of Raman Spectroscopy	2	3

Publications (All) All Articles Conference Papers Books & Book Chapters Patents Others Show/Hide filters

Author

Subject

Date issued

By type

Fulltext

Publications

All

Articles

Conference Papers

Books & Book Chapters

Patents

Others