Results 1-262 of 262 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12021Transient Current Enhancement in MIS Tunnel Diodes with Lateral Electric Field Induced by Designed High-Low Oxide LayersHuang S.-W; Hwu J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices00
22021Energy-Saving Logic Gates Utilizing Coupling Phenomenon between MIS(p) Tunneling DiodesChen J.H; Chen K.C; Hwu J.G.; JENN-GWO HWU IEEE Transactions on Electron Devices00
32021Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate EdgeLin J.-Y; Hwu J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices21
42021Role of Schottky barrier height modulation on the reverse bias current behavior of MIS(P) tunnel diodesChen K.-C; Lin K.-W; Hwu J.-G.; JENN-GWO HWU IEEE Access11
52021Capacitance analysis of transient behavior improved metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gateHuang S.-W; Hwu J.-G.; JENN-GWO HWU IEEE Journal of the Electron Devices Society00
62021Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage with Biased Inner GateHuang C.-Y; Hwu J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices00
72020金氧半穿隧二極體之耦合效應陳冠竹; 胡振國; JENN-GWO HWU 真空科技
82020Ultra-Low Subthreshold Swing in Gated MIS(p) Tunnel Diodes with Engineered Oxide Local Thinning LayersChiang, T.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices22
92020Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate FringeLin, K.-W.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices11
102020Coupling sensitivity in concentric metal-insulator-semiconductor tunnel diodes by controlling the lateral injection electronsChen, K.-C.; Hwu, J.-G.; JENN-GWO HWU AIP Advances11
112020Edge-Etched Al<inf>2</inf>O<inf>3</inf>Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode SensorChen, B.-J.; Hwu, J.-G.; JENN-GWO HWU IEEE Journal of the Electron Devices Society00
122020Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) StructureYang, Y.-C.; Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology44
132020Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling ElectrodeHsu, T.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices00
142019Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ringLi, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices11
152019Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel TransistorYang, C.-F.; Chen, B.-J.; Chen, W.-C.; Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices44
162019Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gateChen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Nanotechnology22
172019Effect of oxide thickness on the two-state characteristics in MIS(p) tunnel diode with ultrathin metal surrounded gateCheng, C.-F.; Yang, Y.-C.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology23
182018Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operationChen Y.-H; Hwu J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices21
192017Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion levelHou, W.-T.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology54
202015The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide filmsLiao, C.-S.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions00
212014Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 LayerChen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU Ecs Journal of Solid State Science and Technology89
222014Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitorChen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU Applied Physics A: Materials Science and Processing 11
232014Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array applicationTseng, P.-H.; Tian, W.-C.; Pan, S.C.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Nanotechnology 22
242014Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxideTseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU Thin Solid Films 11
252014Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodesLin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 66
262014Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diodeLin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology 1514
272014Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layerPang, C.-S.; Hwu, J.-G.; JENN-GWO HWU Nanoscale Research Letters 46
282014Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex cornerTseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology 11
292014Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectricsPang, C.-S.; Hwu, J.-G.; JENN-GWO HWU AIP Advances 76
302014Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiodeLin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 3128
312014Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxidesLu, H.-W.; Hwu, J.-G.; JENN-GWO HWU Applied Physics A: Materials Science and Processing 1113
322014Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensorsLin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 1413
332014Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substratesTseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU Solid-State Electronics 44
342013Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidationTseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 00
352013Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature responseLin, C.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 55
362013Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodizationChen, T.-Y.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology 76
372013Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectricsLin, C.-C.; Hwu, J.-G.; JENN-GWO HWU Nanoscale 1313
382013Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layersLee, C.-W.; Hwu, J.-G.; JENN-GWO HWU AIP Advances 11
392013Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU ECS Journal of Solid State Science and Technology 1110
402013Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layerChen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 30
412013Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effectLu, H.-W.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 110
422011Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensationLin, C.-C.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 00
432011Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrateChiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 00
442011Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etchingWang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU International NanoElectronics Conference, INEC 00
452011Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxidesChen, K.-M.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 55
462011Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensationLin, C.-C.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Device and Materials Reliability 1212
472011Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxidesChang, S.-J.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 1412
482011Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitorLu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 20
492011Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxideChen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 00
502011Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrateChiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 23
512010Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxidesCheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology00
522010Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structureChen, C.-H.; Hwu, J.-G.; JENN-GWO HWU Microelectronic Engineering 22
532010Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization techniqueWang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU 15th OptoElectronics and Communications Conference, OECC2010 
542010Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensorsWang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 98
552010Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k materialCheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU Applied Physics Letters 2523
562009Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensorsWang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU ECS Transactions 10
572009Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization methodChuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU Microelectronic Engineering 42
582009Effect of tensile stress on mos capacitors with ultra-thin gate oxideChen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU International Journal of Electrical Engineering 
592009Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistorsTseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU IEEE International Reliability Physics Symposium10
602009Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectricsChen, C.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 2020
612009Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputteringChang, C.-H.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 1918
622009Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxideChang, C.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Device and Materials Reliability 99
632009Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acidYang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 11
642009Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization techniqueWang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 119
652009Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion regionCheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU ECS Transactions 30
662009Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxidesCheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 3533
672008超薄絕緣層新穎製程開發及其在矽金氧半元件之應用 (新制多年期第1年)胡振國 
682008微電子工程學門研究發展及推動規劃(2/3)胡振國 
692008先進CMOS元件及製程研究-子計畫一:適用於低溫基板製程之高品質絕緣膜形成技術(2/3)胡振國 
702008先進CMOS元件及製程研究-子計畫一:適用於低溫基板製程之高品質絕緣膜形成技術(3/3)胡振國 
712008矽金氧半超薄閘極絕緣層製程研發及新型元件應用(3/3)胡振國 
722008先進CMOS元件及製程研究-總計畫(3/3)胡振國 
732008微電子工程學門研究發展及推動規劃(3/3)胡振國 
742008先進CMOS元件及製程研究-總計畫(2/3)胡振國 
752008Effect of strain-temperature stress on MOS structure with ultra-thin gate oxideLin, C.-N.; Yang, Y.-L.; Chen, W.-T.; Lin, S.-C.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU Microelectronic Engineering 77
762008Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stressesTseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 1110
772008Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization methodChuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 10
782008Shallow level trap formation in SiO2 induced by high field and thermal stressesLin, H.-P.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 21
792008Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization systemWang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 32
802007Effects of electrostatic discharge high-field current impulse on oxide breakdownJENN-GWO HWU Journal of Applied Physics 108
812007Analysis of constitution and characteristics of lateral nonuniformity effects of MOS devices using QM-based Terman methodJENN-GWO HWU IEEE Transactions on Electron Devices 1010
822007Reliability of low-temperature-processing hafnium oxide gate dielectrics prepared by cost-effective nitric acid oxidation techniqueJENN-GWO HWU IEEE Transactions on Device and Materials Reliability 99
832007Oxide-trapped charges induced by electrostatic discharge impulse stressJENN-GWO HWU IEEE Transactions on Electron Devices 107
842007Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memoryJENN-GWO HWU IEEE Transactions on Electron Devices 11
852007Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidationJENN-GWO HWU Applied Physics Letters 1010
862006Enhancement in ultrathin oxide growth by thermal-induced tensile stressHung, C.-J.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Device and Materials Reliability 00
872006Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectricsHuang, S.-W.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 2218
882006Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneouslyWang, T.-M.; Chang, C.-H.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 33
892006Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2)Wang, T.-M.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Sensors Journal 88
902006Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidationChuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU Applied Physics Letters 55
912006Impact of strain-temperature stress on ultrathin oxideTung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 44
922005The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injectionJENN-GWO HWU Solid-State Electronics 10
932005Quality improvement and electrical characteristics of high-k films after receiving direct superimposed with alternative current anodic oxidation compensationJENN-GWO HWU ECS Transactions 00
942005Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's methodJENN-GWO HWU ECS Transactions 10
952005Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structureJENN-GWO HWU Journal of Applied Physics 77
962005快速熱製程氧化層之均勻度與應力效應研究(3/3)胡振國 
972005矽金氧半超薄閘極絕緣層製程研發及新型元件應用(1/3)胡振國 
982004Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO TechniqueYang, Yi-Lin; Hwu, Jenn-Gwo IEEE ELECTRON DEVICE LETTERS 
992004快速熱製程氧化層之均勻度與應力效應研究 (2/3)胡振國 
1002004High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealingJENN-GWO HWU IEEE Transactions on Electron Devices 3532
1012004Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidationJENN-GWO HWU IEEE Transactions on Electron Devices 3128
1022004Growth-then-anodization technique for reliable ultrathin gate oxidesJENN-GWO HWU Journal of the Electrochemical Society 42
1032004High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detectionJENN-GWO HWU IEEE Transactions on Electron Devices 2222
1042004Suboxide characteristics in ultrathin oxides grown under novel oxidation processesJENN-GWO HWU Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 45
1052004Quality improvement of ultrathin gate oxide by using thermal growth followed by SF ANO techniqueJENN-GWO HWU IEEE Electron Device Letters 77
1062004Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodizationJENN-GWO HWU Solid-State Electronics 98
1072004Quality improvement in LPCVD silicon nitrides by anodic and rapid thermal oxidationsJENN-GWO HWU Electrochemical and Solid-State Letters 44
1082004Oxide-thickness-dependent suboxide width and its effect on inversion tunneling currentJENN-GWO HWU Journal of the Electrochemical Society 54
1092004矽新型元件及模組技術研發─子計畫一:超薄膜層氧化技術在矽元件之應用(3/3)胡振國 
1102004矽新型元件及模組技術研發─總計畫(3/3)胡振國 
1112003Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection currentJENN-GWO HWU Applied Physics Letters 77
1122003Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealingJENN-GWO HWU IEEE Transactions on Electron Devices 4339
1132003Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric applicationJENN-GWO HWU Journal of the Electrochemical Society 109
1142003Thermal stress at wafer contact points in rapid thermal processing investigated by repeated spike treatment before oxidationJENN-GWO HWU Journal of Applied Physics 22
1152003Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodesJENN-GWO HWU IEEE Electron Device Letters 22
1162003矽新型元件及模組技術研發(2/3)─子計畫一:超薄膜層氧化技術在矽元件之應用胡振國 
1172003快速熱製程氧化層之均勻度與應力效應研究(1/3)胡振國 
1182003總計畫─矽新型元件及模組技術研發(2/3)胡振國 
1192002Reduction in Leakage Current of Low-Temperature Thin-Gate Oxide by Repeated Spike Oxidation TechniqueHong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo IEEE ELECTRON DEVICE LETTERS 
1202002Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation techniqueHong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU IEEE Electron Device Letters 43
1212002Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processingHong, C.-C.; Chen, J.-L.; Hwu, J.-G.; JENN-GWO HWU Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 12
1222002Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flowHong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Semiconductor Manufacturing 33
1232002Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solutionChen, C.-H.; Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of the Electrochemical Society 66
1242002Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealingTing, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 2523
1252002Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxideHong, C.-C.; Chen, W.-R.; Hwu, J.-G.; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
1262002Effect of mechanical stress on characteristics of silicon thermal oxidesYen, J.-Y.; Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
1272002Enhanced thermally induced stress effect on an ultrathin gate oxideSu, J.-L.; Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 78
1282002矽新型元件及模組技術研發(1/3)─總計畫胡振國 
1292002矽新型元件及模組技術研發(1/3)─子計畫一:超薄膜層氧化技術在矽元件之應用胡振國 
1302001Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal annealChen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU Solid-State Electronics 1212
1312001An on-chip temperature sensor by utilizing a MOS tunneling diodeShih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Electron Device Letters 3227
1322001Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stressHong, C.-C.; Hwu, J.-G.; JENN-GWO HWU Applied Physics Letters 1718
1332001Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injectionHuang, C.-H.; Hwu, J.-G.; JENN-GWO HWU Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 33
1342001Stress effect on the kinetics of silicon thermal oxidationYen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 3431
1352001Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stressHuang, C.-H.; Hwu, J.-G.; JENN-GWO HWU Journal of Applied Physics 44
1362001Application of anodization to reoxidize silicon nitride filmLin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 
1372001快速熱機台設備及製程研發(2/3)─子計畫一:快速熱重覆脈衝加熱製程系統之研究胡振國 
1382001快速熱機台設備及製程研發(2/3)─總計畫胡振國 
1392001Improvement in oxide thickness uniformity by repeated spike oxidationHong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Semiconductor Manufacturing 44
1402000Enhancement of silicon oxidation rate due to tensile mechanical stressJENN-GWO HWU Applied Physics Letters 
1412000Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealingJENN-GWO HWU Solid-State Electronics 63
1422000快速熱機台設備及製程研發(1/3)─子計畫一:快速熱重覆脈衝加熱製程系統之研究胡振國 
1431999Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU IEEE Electron Device Letters 33
1441999The effect of patterned susceptor on the thickness uniformity of rapid thermal oxidesLee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU IEEE Transactions on Semiconductor Manufacturing 1210
1451999Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidationYeh, K.-L.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU Solid-State Electronics 54
1461999快速熱氧化層製程對厚度均勻度及電特性影響之研究胡振國 
1471998Rapid thermal postoxidation anneal engineering in thin gate oxides with al gatesChen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Electron Devices 76
1481998Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition methodLee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an 
1491998Application of anodization followed by rapid thermal treatment to thin gate oxide growthJeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an 
1501998Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidationYeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering 
1511998Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving areaLee, K.-C.; Hwu, J.-G.; JENN-GWO HWU Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 54
1521997Analog maximum, median and minimum circuitLiu, Shen-Iuan ; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo Circuits and Systems, 1997. ISCAS '97. 00
1531997Improvement in radiation-hard CMOS logic gates for noise marginJENN-GWO HWU Proceedings - IEEE International Symposium on Circuits and Systems 
1541997Effect of postoxidation annealing on the reliability of rapid thermal thin gate oxidesJENN-GWO HWU IEEE Electron Device Letters 10
1551997Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solutionJENN-GWO HWU Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 40
1561997Analog maximum, median and minimum circuitJENN-GWO HWU Proceedings - IEEE International Symposium on Circuits and Systems 
157199717.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxideJENN-GWO HWU IEEE Electron Device Letters 127
1581997半導體工程人才培育計畫─半導體工程人才培育計畫:子計畫二:矽金氧半光電元件製作(II)胡振國 
1591997New temperature compensation method for Si wafers in rapid thermal processor using separated Si rings as susceptorsJENN-GWO HWU Materials Research Society Symposium - Proceedings 
1601996Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition methodShen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU IEEE Photonics Technology Letters 66
1611996Process control of rapid thermal N2O-annealed thin gate oxidesHuang, Y.-Z.; Lu, W.-S.; Hwu, J.-G.; JENN-GWO HWU Solid-State Electronics 00
1621996Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectricsLee, K.-C.; Hwu, J.-G.; JENN-GWO HWU Applied Surface Science 00
1631996Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal processLu, W.-S.; Hwu, J.-G.; JENN-GWO HWU IEEE Electron Device Letters 119
1641996Thin-gate oxides prepared by pure water anodization followed by rapid thermal densificationJeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU IEEE Electron Device Letters 2523
1651996Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2OJeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU Applied Physics Letters 1110
1661996Rapid thermal post-metallization annealing effect on thin gate oxidesJeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU Applied Surface Science 43
1671996半導體工程人才培育計畫─半導體工程人才培育計畫:子計畫二:矽金氧半光電元件製作胡振國 
1681996快速熱技術在矽金氧半元件制程之應用胡振國 
1691995Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided OxidesJENN-GWO HWU Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an 00
1701995Preparation of fluorinated gate oxides by liquid phase deposition following rapid thermal oxidationJENN-GWO HWU Applied Physics Letters 
1711995Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxidesJENN-GWO HWU Solid State Electronics 24
1721995Rapid thermal post-metallization annealing in thin gate oxidesJENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers 11
1731995A Systematic Study of the Initial Electrical and Radiation Hardness Properties of Reoxidized Nitrided Oxides by Rapid Thermal ProcessingJENN-GWO HWU IEEE Transactions on Nuclear Science 11
1741995複合式半導體微型壓力感測器之研究\─複合式半導體微型壓力感測器之研究:子計畫一-壓力感測器用之矽金氧半場效電晶體放大器製作及穩定胡振國 
1751995Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo 
1761994Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal TreatmentsJENN-GWO HWU IEEE Transactions on Electron Devices 56
1771994Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2OJENN-GWO HWU Applied Physics Letters 44
1781994Effect of starting oxide preparation on electrical properties of reoxidized nitrided and N2O-annealed gate oxidesJENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers 23
1791994Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealingJENN-GWO HWU Japanese Journal of Applied Physics, Part 2: Letters 11
1801994Eliminating the surface inversion layer under the field oxide by low pressure rapid thermal annealingJENN-GWO HWU Journal of the Electrochemical Society 11
1811994Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo 
1821994Stable Si MOS Devices with Oxynitride Gate DielectricsHwu, Jenn-Gwo 
1831994Design and Fabrication of Basic Silicon MOS Digital CiruitsHwu, Jenn-Gwo 
1841994Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides胡振國 ; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo ; Jeng, M. J.
1851994Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate DielectricsLee, K. C.; 胡振國 ; Hwu, Jenn-Gwo 
1861994Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo ; Lu, W. S.
1871994以含氮氧化矽閘極製程製作高穩定度矽金氧半元件胡振國 
1881994Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidationLu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU 1994 International Electron Devices and Materials Symposium, EDMS 199420
1891994Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealingsWu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU 1994 International Electron Devices and Materials Symposium, EDMS 199400
1901994Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo ; Wu, Y. L.; Kuo, K. M.Proceedings of International Electronic Devices and Materials Symposium 
1911994Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing TreatmentLu, W. S.; 胡振國 ; Chou, J. S.; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, Si-Chen 1994 International EDMS
1921993Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides胡振國 ; Lee, G. C.; Hwu, Jenn-Gwo ; Lee, G. C.
1931993Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo ; Jeng, M. J.
1941993Radiation Hard Process for Rapid Thermal Reoxidized Nitrided OxidesHwu, Jenn-Gwo 
1951993Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo ; Lu, W. S.
1961993Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo ; Wu, Y. L.
1971993Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo ; Wu, Y. L.
1981993Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation AnnealJENN-GWO HWU IEEE Electron Device Letters 1211
1991993Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate OxidesJENN-GWO HWU IEEE Transactions on Electron Devices 66
2001993抗輻射快速熱再氧化氮化氧化層製程之研究胡振國 
2011993Aspect ratio design consideration for radiation-hard CMOS invertersJeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation00
2021993Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo ; Wu, Z. Y.Proceedings of Electronic Devices and Materials Symposium 
2031993Electrical Analysis of Wirings in Thin-Film Packaging (I)Hwu, Jenn-Gwo ; Wu, Ruey-Beei 
2041992Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devicesShu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU Applied Physics Letters 1312
2051992Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo 
2061992Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing胡振國 ; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo ; Lin, J. J.
2071992Applications of Rapid Thermal Processing and Radiation Processing on Si Gate OxidesHwu, Jenn-Gwo 
2081992Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay methodLin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 23
2091992Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitorsLin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 11
2101992Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo 
2111992A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital CircuitsChen, C.-C.; Liu, S.-C.; Hsiao, C.-C.; Hwu, J.-G.; JENN-GWO HWU IEEE Transactions on Nuclear Science 1512
2121992Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiationChang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU IEE Proceedings, Part G: Circuits, Devices and Systems 
2131991Effect of oxide resistance on the characterization of interface trap density in MOS structuresLin, J.-J.; Hwu, J.-G.; JENN-GWO HWU Solid State Electronics 11
2141991抗輻射金氧半元件製程及電路輻射穩定度研究胡振國 
2151991Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal TreatmentsChang-Liao, K. S.; 胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo 
2161991Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS CircuitsHwu, Jenn-Gwo 
2171991Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo ; Lin, J. J.
2181991Radiation Reliability of Devices Used in Optical Fiber CommunicationHwu, Jenn-Gwo 
2191991光纖通訊用元件之輻射穩定度研究胡振國 
2201991Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatmentsChang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU Solid State Electronics 100
2211990Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequencyHwu, J.-G.; Lin, S.-T.; HwuJG Circuits, Devices and Systems, IEE Proceedings G 
2221990Oxide Resistance Characterization in MOS structures by the Voltage Decay MethodHwu, Jenn-Gwo ; Ho, I-HsiuJAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 
2231990Improvement of oxide leakage currents in mos structures by postirradiation annealingLin, J.-J.; Hwu, J.-G.; JENN-GWO HWU Japanese Journal of Applied Physics02
2241990Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal TreatmentsJENN-GWO HWU IEEE Electron Device Letters 1113
2251990Oxide resistance characterization in MOS structures by the voltage decay methodJENN-GWO HWU Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 33
2261990Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency C/V techniqueJENN-GWO HWU IEE proceedings. Part G. Electronic circuits and systems 
2271990Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo 
2281990A Study of the Leakage Property of Thin Gate OxidesHwu, Jenn-Gwo 
2291990Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal TreatmentsHwu, Jenn-Gwo 
2301990Characterization Si02 by DC Resistance Measurement TehcniqueHwu, Jenn-Gwo 
2311990Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo Proceedings of International Electronic Devices and Materials Symposium 
2321990Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage techniqueJENN-GWO HWU Journal of Physics and Chemistry of Solids 00
2331990Thin-oxide thickness measurement in ellipsometry by a wafer rotation methodJENN-GWO HWU Solid State Electronics 11
2341989Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS CapacitorsHwu, Jenn-Gwo 
2351989A Study of the Radiation Effect on Tantalum Oxide FilmsHwu, Jenn-Gwo 
2361989Comparison Between Charge-Temperature and Bias-Temperature AgingsHwu, Jenn-Gwo 
2371989Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior胡振國 ; Lin, S. T. ; Hwu, Jenn-Gwo 
2381989Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesHwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU Applied Physics A Solids and Surfaces 00
2391989Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatmentsHwu, J.-G.; Fu, S.-L.; JENN-GWO HWU Solid State Electronics 1822
2401989Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States胡振國 ; Lin, J. J.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-SeenProceedings of Electronic Devices and Materials Symposium 
2411988Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS CapacitorsHwu, J.-G. ; Lee, G. S.; Lee, Si-Chen ; Wang, Way-SeenIEEE Transactions on Nuclear Science 010
2421988C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiationHwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU Journal of the Electrochemical Society 1113
2431988The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambientHwu, J.-G.; Fu, S.-L.; JENN-GWO HWU Applied Physics A Solids and Surfaces 88
2441987Direct Indication of Interface Trap States in an Mos Capacitor From the Peaks of Optical illumination-induced CapacitancesJENN-GWO HWU Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an 00
2451987Clockwise C-V hysteresis phenomena of metal-tantalum-oxide-silicon-oxide- silicon ( p) capacitors due to leakage current through tantalum oxideJENN-GWO HWU Journal of Applied Physics 1716
2461987Constant peak field distribution and voltage dropping in the oxide layer of a MOS capacitor during charge-temperature agingJENN-GWO HWU International Journal of Electronics 00
2471987Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo ; Jeng, M. J.
2481987Interface Properties of Al/Ta205/Si02/Si (P) CapacitorHwu, Jenn-Gwo ; Wang, Way-Seen
2491987The Effect of Postoxidation Cooling Ambient on Si02 PropertyHwu, Jenn-Gwo 
2501987Charge Temperature Effects on Co-60 Irradiated Mos CapacitorsLee, G. S.; 胡振國 ; 李嗣涔 ; 王維新; 胡振國 ; 李嗣涔 ; Wang, Way-SeenThe 13th EDMS
2511987Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide胡振國 ; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo ; Wang, Way-Seen; Tu, Y. K.Journal of Applied Physics 
2521987Studies of the Radiation-Hardening CMOS ProcessesHwu, Jenn-Gwo ; Lee, Si-Chen ; Wang, Way-Seen
2531986Relationship between mobile charges and interface trap states in silicon mos capacitorsHwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an 00
2541986Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature techniqueHwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU Thin Solid Films 86
2551986Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature techniqueHwu, J.G.; Wang, W.S.; JENN-GWO HWU Applied Physics A Solids and Surfaces 109
2561986The effect of postoxidation cooling in oxygen on the interface property of MOS capacitorsHwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU International Journal of Electronics 11
2571986Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS CapacitorHwu, Jenn-Gwo 
2581986Radiation Effects on the Oxide Properties of Silicon MOS Capacitor胡振國 ; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, G. S.; Jeng, M. J.; Wang, Way-Seen; Lee, Si-Chen Electronic Devices and Materials Symposium 
2591985Impurity-related interface trap in an Al/SiO2/Si(P) capacitorJENN-GWO HWU Thin Solid Films 33
2601985The Effect of Charge-Temperature Aging on n-MOSFET胡振國 ; Lin, C. M.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-SeenProceedings of ROC Electronic Devices and Materials Symposium 
2611983The Forward Characterization of 50 Amperes Power RectifierChen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo 9th EDMS 
2621982Breakdown Voltage of Junction Passivated Power Rectifier林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo ; Chiou, Y. L.8th EDMS