第 1 到 5 筆結果,共 5 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2009 | Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 4 | 2 | |
2 | 2008 | Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system | Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 3 | 2 | |
3 | 2008 | Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide | Lin, C.-N.; Yang, Y.-L.; Chen, W.-T.; Lin, S.-C.; Chuang, K.-C.; JENN-GWO HWU | Microelectronic Engineering | 7 | 7 | |
4 | 2008 | Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method | Chuang, K.-C.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 0 | |
5 | 2006 | Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation | Chuang, K.-C.; JENN-GWO HWU | Applied Physics Letters | 5 | 5 |