| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1 | 2014 | Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer | Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU | Ecs Journal of Solid State Science and Technology | 8 | 9 | |
2 | 2004 | Quality Improvement of Ultrathin Gate
Oxide by Using Thermal Growth
Followed by SF ANO Technique | Yang, Yi-Lin; Hwu, Jenn-Gwo | IEEE ELECTRON DEVICE LETTERS | | | |
3 | 2002 | Reduction in Leakage Current of Low-Temperature
Thin-Gate Oxide by Repeated Spike
Oxidation Technique | Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo | IEEE ELECTRON DEVICE LETTERS | | | |
4 | 2001 | Novel ultra thin gate oxide growth technique by alternating current anodization | Hwu, Jenn-Gwo ; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len | 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001 | 0 | 0 | |
5 | 1999 | The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides | Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo ; Wung, Tzong-Shyan | IEEE Transactions on Semiconductor Manufacturing | | | |
6 | 1998 | Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method | Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
7 | 1998 | Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation | Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering | | | |
8 | 1998 | Application of anodization followed by rapid thermal treatment to thin gate oxide growth | Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
9 | 1997 | Analog maximum, median and minimum circuit | Liu, Shen-Iuan ; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo | Circuits and Systems, 1997. ISCAS '97. | 0 | 0 | |
10 | 1995 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, K. C.; Hwu, Jenn-Gwo | | | | |
11 | 1995 | Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides | 胡振國 ; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo | | | | |
12 | 1995 | Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
13 | 1994 | Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
14 | 1994 | Design and Fabrication of Basic Silicon MOS Digital Ciruits | Hwu, Jenn-Gwo | | | | |
15 | 1994 | Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics | Lee, K. C.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
16 | 1994 | Stable Si MOS Devices with Oxynitride Gate Dielectrics | Hwu, Jenn-Gwo | | | | |
17 | 1994 | Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment | Lu, W. S.; 胡振國 ; Chou, J. S.; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, Si-Chen | 1994 International EDMS | | | |
18 | 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
19 | 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | | | | |
20 | 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo | Proceedings of Electronic Devices and Materials Symposium | | | |
21 | 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
22 | 1993 | Electrical Analysis of Wirings in Thin-Film Packaging (I) | Hwu, Jenn-Gwo ; Wu, Ruey-Beei | | | | |
23 | 1993 | Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides | Hwu, Jenn-Gwo | | | | |
24 | 1993 | Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
25 | 1993 | Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
26 | 1993 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, G. C.; Hwu, Jenn-Gwo | | | | |
27 | 1993 | Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
28 | 1992 | Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
29 | 1992 | Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing | 胡振國 ; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
30 | 1992 | Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides | Hwu, Jenn-Gwo | | | | |
31 | 1992 | Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
32 | 1991 | Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments | Chang-Liao, K. S.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
33 | 1991 | Radiation Reliability of Devices Used in Optical Fiber Communication | Hwu, Jenn-Gwo | | | | |
34 | 1991 | Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits | Hwu, Jenn-Gwo | | | | |
35 | 1991 | Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | | | | |
36 | 1990 | Oxide Resistance Characterization in MOS structures by the Voltage Decay Method | Hwu, Jenn-Gwo ; Ho, I-Hsiu | JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 | 3 | | |
37 | 1990 | Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments | 胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo | | | | |
38 | 1990 | A Study of the Leakage Property of Thin Gate Oxides | Hwu, Jenn-Gwo | | | | |
39 | 1990 | Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
40 | 1990 | Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments | Hwu, Jenn-Gwo | | | | |
41 | 1990 | Characterization Si02 by DC Resistance Measurement Tehcnique | Hwu, Jenn-Gwo | | | | |
42 | 1989 | Comparison Between Charge-Temperature and Bias-Temperature Agings | Hwu, Jenn-Gwo | | | | |
43 | 1989 | Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States | 胡振國 ; Lin, J. J.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of Electronic Devices and Materials Symposium | | | |
44 | 1989 | Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior | 胡振國 ; Lin, S. T. ; Hwu, Jenn-Gwo | | | | |
45 | 1989 | A Study of the Radiation Effect on Tantalum Oxide Films | Hwu, Jenn-Gwo | | | | |
46 | 1989 | Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors | Hwu, Jenn-Gwo | | | | |
47 | 1988 | C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation | Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 13 | |
48 | 1987 | Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide | 胡振國 ; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo ; Wang, Way-Seen | Journal of Applied Physics | | | |
49 | 1987 | Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
50 | 1987 | Studies of the Radiation-Hardening CMOS Processes | Hwu, Jenn-Gwo ; Lee, Si-Chen ; Wang, Way-Seen | | | | |
51 | 1987 | Interface Properties of Al/Ta205/Si02/Si (P) Capacitor | Hwu, Jenn-Gwo ; Wang, Way-Seen | | | | |
52 | 1987 | The Effect of Postoxidation Cooling Ambient on Si02 Property | Hwu, Jenn-Gwo | | | | |
53 | 1986 | Radiation Effects on the Oxide Properties of Silicon MOS Capacitor | 胡振國 ; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔 ; Hwu, Jenn-Gwo ; Wang, Way-Seen; Lee, Si-Chen | Electronic Devices and Materials Symposium | | | |
54 | 1986 | Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor | Hwu, Jenn-Gwo | | | | |
55 | 1985 | The Effect of Charge-Temperature Aging on n-MOSFET | 胡振國 ; Lin, C. M.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of ROC Electronic Devices and Materials Symposium | | | |
56 | 1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
57 | 1982 | Breakdown Voltage of Junction Passivated Power Rectifier | 林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 8th EDMS | | | |