第 1 到 5 筆結果,共 5 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2021 | Energy-Saving Logic Gates Utilizing Coupling Phenomenon between MIS(p) Tunneling Diodes | Chen J.H; Chen K.C; Hwu J.G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
2 | 2021 | Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge | Lin J.-Y; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
3 | 2021 | Role of Schottky barrier height modulation on the reverse bias current behavior of MIS(P) tunnel diodes | Chen K.-C; Lin K.-W; JENN-GWO HWU | IEEE Access | 2 | 2 | |
4 | 2021 | Capacitance analysis of transient behavior improved metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate | Huang S.-W; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
5 | 2021 | Transient Current Enhancement in MIS Tunnel Diodes with Lateral Electric Field Induced by Designed High-Low Oxide Layers | Huang S.-W; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 4 |