| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1 | 2008 | 超薄絕緣層新穎製程開發及其在矽金氧半元件之應用 (新制多年期第1年) | 胡振國 | | | | |
2 | 1996 | 複合式半導體微型壓力感測計之研究(總計畫) | 呂學士 ; 胡振國 ; 張培仁 | | | | |
3 | 1995 | 複合式半導體微型壓力感測器之研究\─複合式半導體微型壓力感測器之研究:子計畫一-壓力感測器用之矽金氧半場效電晶體放大器製作及穩定 | 胡振國 | | | | |
4 | 2003 | 總計畫─矽新型元件及模組技術研發(2/3) | 胡振國 | | | | |
5 | 2008 | 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(3/3) | 胡振國 | | | | |
6 | 2005 | 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(1/3) | 胡振國 | | | | |
7 | 2004 | 矽新型元件及模組技術研發─總計畫(3/3) | 胡振國 | | | | |
8 | 2004 | 矽新型元件及模組技術研發─子計畫一:超薄膜層氧化技術在矽元件之應用(3/3) | 胡振國 | | | | |
9 | 2003 | 矽新型元件及模組技術研發(2/3)─子計畫一:超薄膜層氧化技術在矽元件之應用 | 胡振國 | | | | |
10 | 2002 | 矽新型元件及模組技術研發(1/3)─總計畫 | 胡振國 | | | | |
11 | 2002 | 矽新型元件及模組技術研發(1/3)─子計畫一:超薄膜層氧化技術在矽元件之應用 | 胡振國 | | | | |
12 | 2001 | 液相氧化及輻射技術在超薄閘極氧化層製程之應用 | 胡振國 | | | | |
13 | 1991 | 抗輻射金氧半元件製程及電路輻射穩定度研究 | 胡振國 | | | | |
14 | 1993 | 抗輻射快速熱再氧化氮化氧化層製程之研究 | 胡振國 | | | | |
15 | 2005 | 快速熱製程氧化層之均勻度與應力效應研究(3/3) | 胡振國 | | | | |
16 | 2003 | 快速熱製程氧化層之均勻度與應力效應研究(1/3) | 胡振國 | | | | |
17 | 2004 | 快速熱製程氧化層之均勻度與應力效應研究 (2/3) | 胡振國 | | | | |
18 | 1999 | 快速熱氧化層製程對厚度均勻度及電特性影響之研究 | 胡振國 | | | | |
19 | 2002 | 快速熱機台設備及製程研發(3/3)總計畫 | 胡振國 | | | | |
20 | 2002 | 快速熱機台設備及製程研發(3/3)子計畫一:快速熱重覆脈衝加熱製程系統之研究(3/3) | 胡振國 | | | | |
21 | 2001 | 快速熱機台設備及製程研發(2/3)─總計畫 | 胡振國 | | | | |
22 | 2001 | 快速熱機台設備及製程研發(2/3)─子計畫一:快速熱重覆脈衝加熱製程系統之研究 | 胡振國 | | | | |
23 | 2000 | 快速熱機台設備及製程研發(1/3)─總計畫 | 胡振國 | | | | |
24 | 2000 | 快速熱機台設備及製程研發(1/3)─子計畫一:快速熱重覆脈衝加熱製程系統之研究 | 胡振國 | | | | |
25 | 1996 | 快速熱技術在矽金氧半元件制程之應用 | 胡振國 | | | | |
26 | 2008 | 微電子工程學門研究發展及推動規劃(3/3) | 胡振國 | | | | |
27 | 2008 | 微電子工程學門研究發展及推動規劃(2/3) | 胡振國 | | | | |
28 | 1999 | 參加1998國際電子元件材料會議 | 胡振國 | | | | |
29 | 1999 | ─半導體關鍵設備研發-總計畫(III) | 胡振國 | | | | |
30 | 1997 | 半導體關鍵設備研發─子計畫一:快速熱處理機台自動化研究(I) | 胡振國 | | | | |
31 | 1999 | 半導體關鍵設備研發(III)─子計畫一:快速熱處理機台自動化研究 | 胡振國 | | | | |
32 | 1998 | 半導體關鍵設備研發(II)─子計畫一:快速熱處理機台自動化研究 | 胡振國 | | | | |
33 | 1998 | 半導體工程人才培育計畫─子計畫二:矽金氧半光電元件製作(3/3) | 胡振國 | | | | |
34 | 1997 | 半導體工程人才培育計畫─半導體工程人才培育計畫:子計畫二:矽金氧半光電元件製作(II) | 胡振國 | | | | |
35 | 1996 | 半導體工程人才培育計畫─半導體工程人才培育計畫:子計畫二:矽金氧半光電元件製作 | 胡振國 | | | | |
36 | 1991 | 光纖通訊用元件之輻射穩定度研究 | 胡振國 | | | | |
37 | 2008 | 先進CMOS元件及製程研究-總計畫(3/3) | 胡振國 | | | | |
38 | 2008 | 先進CMOS元件及製程研究-總計畫(2/3) | 胡振國 | | | | |
39 | 2008 | 先進CMOS元件及製程研究-子計畫一:適用於低溫基板製程之高品質絕緣膜形成技術(3/3) | 胡振國 | | | | |
40 | 2008 | 先進CMOS元件及製程研究-子計畫一:適用於低溫基板製程之高品質絕緣膜形成技術(2/3) | 胡振國 | | | | |
41 | 2000 | 低漏流高穩定性超薄閘極氧化層製程研究 | 胡振國 | | | | |
42 | 1998 | 低溫預成長再高溫快速熱處理備製薄閘極氧化層 | 胡振國 | | | | |
43 | 1997 | 以液相沉積法將雜質含入矽氧化層技術之研發 | 胡振國 | | | | |
44 | 1995 | 以快速熱程序生長及退火薄閘極氧化層 | 胡振國 | | | | |
45 | 1994 | 以含氮氧化矽閘極製程製作高穩定度矽金氧半元件 | 胡振國 | | | | |
46 | 1989 | A Study of the Radiation Effect on Tantalum Oxide Films | Hwu, Jenn-Gwo | | | | |
47 | 1990 | A Study of the Leakage Property of Thin Gate Oxides | Hwu, Jenn-Gwo | | | | |
48 | 1987 | Studies of the Radiation-Hardening CMOS Processes | Hwu, Jenn-Gwo ; Lee, Si-Chen ; Wang, Way-Seen | | | | |
49 | 1991 | Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits | Hwu, Jenn-Gwo | | | | |
50 | 1994 | Stable Si MOS Devices with Oxynitride Gate Dielectrics | Hwu, Jenn-Gwo | | | | |
51 | 1991 | Radiation Reliability of Devices Used in Optical Fiber Communication | Hwu, Jenn-Gwo | | | | |
52 | 1992 | Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
53 | 1995 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, K. C.; Hwu, Jenn-Gwo | | | | |
54 | 1993 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, G. C.; Hwu, Jenn-Gwo | | | | |
55 | 1993 | Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides | Hwu, Jenn-Gwo | | | | |
56 | 1987 | Interface Properties of Al/Ta205/Si02/Si (P) Capacitor | Hwu, Jenn-Gwo ; Wang, Way-Seen | | | | |
57 | 1991 | Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments | Chang-Liao, K. S.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
58 | 1990 | Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments | 胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo | | | | |
59 | 1990 | Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments | Hwu, Jenn-Gwo | | | | |
60 | 1992 | Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing | 胡振國 ; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
61 | 1995 | Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides | 胡振國 ; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo | | | | |
62 | 1993 | Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
63 | 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | | | | |
64 | 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
65 | 1993 | Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
66 | 1991 | Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | | | | |
67 | 1989 | Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors | Hwu, Jenn-Gwo | | | | |
68 | 1989 | Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior | 胡振國 ; Lin, S. T. ; Hwu, Jenn-Gwo | | | | |
69 | 1986 | Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor | Hwu, Jenn-Gwo | | | | |
70 | 1993 | Electrical Analysis of Wirings in Thin-Film Packaging (I) | Hwu, Jenn-Gwo ; Wu, Ruey-Beei | | | | |
71 | 1987 | The Effect of Postoxidation Cooling Ambient on Si02 Property | Hwu, Jenn-Gwo | | | | |
72 | 1999 | The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides | Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo ; Wung, Tzong-Shyan | IEEE Transactions on Semiconductor Manufacturing | | | |
73 | 1994 | Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
74 | 1992 | Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
75 | 1994 | Design and Fabrication of Basic Silicon MOS Digital Ciruits | Hwu, Jenn-Gwo | | | | |
76 | 1989 | Comparison Between Charge-Temperature and Bias-Temperature Agings | Hwu, Jenn-Gwo | | | | |
77 | 1990 | Characterization Si02 by DC Resistance Measurement Tehcnique | Hwu, Jenn-Gwo | | | | |
78 | 1995 | Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
79 | 1993 | Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
80 | 1992 | Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides | Hwu, Jenn-Gwo | | | | |
81 | 1994 | Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics | Lee, K. C.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
82 | 1987 | Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |