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第 1 到 481 筆結果，共 481 筆。

	公開日期	標題	作者	來源出版物	scopus	WOS
1	2024	Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation	Liu, Yuan Ming; Chiu, Jih Chao; Chen, Yu Ciao; Fan, Yu Cheng; Ma, Rong Wei; Yen, Chia Chun; Chen, Tsang Long; Chou, Cheng Hsu; CHEE-WEE LIU	Semiconductor Science and Technology
2	2023	Effects of shear strain on HZO ferroelectric orthorhombic phases	Chen, Yun Wen; CHEE-WEE LIU	Applied Physics Letters	0	0
3	2023	First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff<-7μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C	Chiu, Jih Chao; Sarkar, Eknath; Liu, Yuan Ming; Chen, Yu Ciao; Fan, Yu Cheng; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	0	0
4	2023	First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles	Chen, Yu Rui; Liu, Yi Chun; Zhao, Zefu; Hsieh, Wan Hsuan; Lee, Jia Yang; Tu, Chien Te; Huang, Bo Wei; Wang, Jer Fu; Chueh, Shee Jier; Xing, Yifan; Chen, Guan Hua; Chou, Hung Chun; Woo, Dong Soo; Lee, M. H.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	0	0
5	2023	Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2P<inf>r</inf>= 84 μC/cm<sup>2</sup>and Endurance > 1E11	Zhao, Zefu; Chen, Yu Rui; Chen, Yun Wen; Hsieh, Wan Hsuan; Wang, Jer Fu; Lee, Jia Yang; Xing, Yifan; Chen, Guan Hua; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	0	0
6	2023	First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels	Tu, Chien Te; Hsieh, Wan Hsuan; Chen, Yu Rui; Huang, Bo Wei; Liao, Yu Tsung; WEI-JEN CHEN; Liu, Yi Chun; Cheng, Chun Yi; Chou, Hung Chun; Lu, Hao Yi; Hsin, Cheng Hsien; He, Geng Min; Woo, Dong Soo; Chueh, Shee Jier; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM
7	2023	Extremely High-κ Hf<inf>0.2</inf>Zr<inf>0.8</inf>O<inf>2</inf>Gate Stacks Integrated into Ge<inf>0.95</inf>Si<inf>0.05</inf>Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at V<inf>OV</inf>=V<inf>DS</inf>=0.5V	Liu, Yi Chun; Chen, Yu Rui; Chen, Yun Wen; Lin, Hsin Cheng; Hsieh, Wan Hsuan; Tu, Chien Te; Huang, Bo Wei; WEI-JEN CHEN; Cheng, Chun Yi; Chueh, Shee Jier; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	0	0
8	2022	First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation	Tu, Chien Te; Liu, Yi Chun; Huang, Bo Wei; Chen, Yu Rui; Hsieh, Wan Hsuan; Tsai, Chung En; Chueh, Shee Jier; Cheng, Chun Yi; Ma, Yichen; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	1	0
9	2022	RF Performance Optimization of Stacked Si Nanosheet nFETs	Lin H.-C; Chou T; Chiu K.-Y; Chung C.-C; Tsen C.-J; CHEE-WEE LIU	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022	2	0
10	2022	Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs	Lee M.-X; Chiu J.-C; Li S.-L; Sarkar E; Chen Y.-C; Yen C.-C; Chen T.-L; Chou C.-H; CHEE-WEE LIU	IEEE Journal of the Electron Devices Society	1	1
11	2022	6 Stacked Ge0.95Si0.05nGAAFETs without Parasitic Channels by Wet Etching	Cheng C.-Y; Hsieh W.-H; Huang B.-W; Liu Y.-C; Tu C.-T; Tsai C.-E; Chueh S.-J; Chen G.-H; CHEE-WEE LIU	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022	1	0
12	2022	Boost of orthorhombic population with amorphous SiO2interfacial layer-a DFT study	Chen Y.-W; CHEE-WEE LIU	Semiconductor Science and Technology	3	3
13	2022	Cell Stability and Write Improvement of 2T (Footprint) Stacked SRAM	Chou T; Chung C.-C; Lin H.-C; CHEE-WEE LIU	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022	0	0
14	2022	Electrical Measurements to Detect Liquid Concentration	Yeh C.-H; Lee C.-T; Chiu J.-C; Wu Y.-T; Lin C.-T; Yu C; Chuang T.-S; CHEE-WEE LIU	IEEE Transactions on Semiconductor Manufacturing	25	0
15	2022	Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching	Tu C.-T; Hsieh W.-H; Huang B.-W; Chen Y.-R; Liu Y.-C; Tsai C.-E; Chueh S.-J; CHEE-WEE LIU	IEEE Electron Device Letters	11	10
16	2022	Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching	Huang B.-W; Tsai C.-E; Liu Y.-C; Tu C.-T; Hsieh W.-H; Jan S.-R; Chen Y.-R; Chueh S.-J; Cheng C.-Y; CHEE-WEE LIU	IEEE Transactions on Electron Devices	3	3
17	2022	RF Performance of Stacked Si Nanosheets/Nanowires	Lin H; Chou T; Chiu K; Jan S; Chung C; Tsen C; CHEE-WEE LIU	IEEE Electron Device Letters	0	4
18	2021	First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 ℃	Tsai C.-E; Chen Y.-R; Tu C.-T; Liu Y.-C; Chen J.-Y; CHEE-WEE LIU		0	0
19	2021	Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation	Chen W.-J; Tsou Y.-J; Shih H.-C; Liu P.-C; Liu C.W.; CHEE-WEE LIU	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD	1	0
20	2021	RF Performance of Stacked Si Nanosheet nFETs	Lin H.-C; Chou T; Chung C.-C; Tsen C.-J; Huang B.-W; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	10	6
21	2021	Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier	Chiu J; Li S; Lee M; Yen C; Chen T; Chou C; Liu C.W.; CHEE-WEE LIU	IEEE Journal of the Electron Devices Society	2	2
22	2021	Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system	Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU	Physical Review B	2	1
23	2021	Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching	Tsai C.-E; Liu Y.-C; Tu C.-T; Huang B.-W; Jan S.-R; Chen Y.-R; Chen J.-Y; Chueh S.-J; Cheng C.-Y; Tsen C.-J; Ma Y; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	8	0
24	2021	Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch	Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	4	5
25	2021	First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching	Liu Y.-C; Tu C.-T; Tsai C.-E; Chen Y.-R; Chen J.-Y; Jan S.-R; Huang B.-W; Chueh S.-J; Tsen C.-J; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	3
26	2021	Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching	Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	5	6
27	2021	Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability	Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings	0	0
28	2021	Thermally Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching	Tsou Y.-J; CHEE-WEE LIU et al.	IEEE Transactions on Electron Devices	6	5
29	2021	Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1?xZrxO2 diodes	Hsiang K.-Y; Liao C.-Y; Wang J.-F; Lou Z.-F; Lin C.-Y; Chiang S.-H; Liu C.-W; Hou T.-H; Lee M.-H.; CHEE-WEE LIU	Nanomaterials	4	4
30	2021	Architecture and Optimization of 2T (Footprint) SRAM	Chung C.-C; Lin H.-C; Huang B.-W; Tsen C.-J; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	2	1
31	2021	Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure	Chen D et al.; Cai S; Hsu N.-W; Huang S.-H; Chuang Y; Nielsen E; JIUN-YUN LI ; CHEE-WEE LIU ; Lu T.M; Laroche D.	Applied Physics Letters	0	1
32	2020	Energy preference of uniform polarization switching for HfO2 by first-principle study	Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU	Journal of Physics D: Applied Physics	10	9
33	2020	Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels	Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU	Semiconductor Science and Technology	1	1
34	2020	Infrared Response of Stacked GeSn Transistors	Liu, H.-H.; Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020	0	0
35	2020	Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors	Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	3	2
36	2020	Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition	Tsai, C.-E.; Lu, F.-L.; Liu, Y.-C.; Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	3	3
37	2020	On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges	Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	17	15
38	2020	Metallic state in a strongly interacting spinless two-valley electron system in two dimensions	Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Zhu A.Y.X; Kravchenko S.V.; CHEE-WEE LIU	Physical Review B	8	8
39	2020	First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping	Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	3	0
40	2020	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	2	0
41	2020	Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers	Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; Liu C.W.; CHEE-WEE LIU	Device Research Conference - Conference Digest, DRC	0	0
42	2020	Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells	Shashkin, A.A.; Melnikov, M.Y.; Dolgopolov, V.T.; Radonji?, M.M.; Dobrosavljevi?, V.; Huang, S.-H.; Liu, C.W.; Zhu, A.Y.X.; Kravchenko, S.V.; CHEE-WEE LIU	Physical Review B	6	6
43	2020	Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure	Liu, X.; Lu, T.-M.; Harris, C.T.; Lu, F.-L.; Liu, C.-Y.; JIUN-YUN LI ; CHEE-WEE LIU ; Du, Rui-Rui	Physical Review B	1	0
44	2020	First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels	Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	4	0
45	2020	600 meV Effective Work Function Tuning by Sputtered WNxFilms	Tsai, C.-E.; Huang, C.-H.; Chen, Y.-R.; Tu, C.-T.; Huang, Y.-S.; Liu, C.W.; CHEE-WEE LIU	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020	0	0
46	2020	Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02nGAAFETs	Lin, S.-Y.; Liu, H.-H.; Tu, C.-T.; Huang, Y.-S.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	2	2
47	2020	Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations	Fan, S.-T.; Chen, Y.-W.; Liu, C.W.; CHEE-WEE LIU	Journal of Physics D: Applied Physics	22	24
48	2020	Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2	Fan S.-T; Chen Y.-W; Chen P.-S; Liu C.W.; CHEE-WEE LIU	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020	0	0
49	2020	Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors	Yen C.-C; Tai A.-H; Liu Y.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU	IEEE Journal of the Electron Devices Society	17	17
50	2020	Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry	Chung C.-C; Lin H.-C; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	3	0
51	2019	Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs	Lee M.H; MING-HAN LIAO ; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	12	0
52	2019	Ni, Pt, and Ti stanogermanide formation on Ge<inf>0.92</inf>Sn<inf>0.08</inf>	Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-V.; Lu, F.-L.; Liu, C.W.; Holmes, J.D.; Duffy, R.; CHEE-WEE LIU	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019	0	0
53	2019	Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride	Huang, C.-H.; Tsai, C.-E.; Chen, Y.-R.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	4	2
54	2019	Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance	Chung, C.-C.; Lin, H.H.; Wan, W.K.; Yang, M.-T.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	17	14
55	2019	First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise	Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	6	0
56	2019	First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V	Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	9	0
57	2019	Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08	Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU	Thin Solid Films	9	7
58	2019	Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs	Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	11	11
59	2019	Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method	Tsou Y.-J; Chiu J.-C; Shih H.-C; Liu C.W.; CHEE-WEE LIU	IEEE Journal on Exploratory Solid-State Computational Devices and Circuits	3	2
60	2019	Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system	Melnikov, M.Y.; Shashkin, A.A.; Dolgopolov, V.T.; Zhu, A.Y.X.; Kravchenko, S.V.; Huang, S.-H.; Liu, C.W.; CHEE-WEE LIU	Physical Review B	21	19
61	2019	Record Low Contact Resistivity (4.4¡?10<sup>-10</sup> £[-cm<sup>2</sup>) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga	Lu, F.-L.; Tsai, C.-E.; Huang, C.-H.; Ye, H.-Y.; Lin, S.-Y.; Liu, C.W.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	3	0
62	2019	First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching	Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	6	0
63	2019	Theoretical calculation of ferroelectric Hf<inf>1-x</inf>ZrxO<inf>2</inf> by first-principle molecular dynamic simulation	Chen, P.-S.; Liu, C.W.; CHEE-WEE LIU	Materials Research Express	7	6
64	2019	Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7	Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Tsou, Y.-J.; Liu, Y.-C.; Tu, C.-T.; Liu, C.W.; CHEE-WEE LIU	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019	2	0
65	2019	Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs	CHEE-WEE LIU ; Lee, M.H.; Liu, C.W. et al.	Technical Digest - International Electron Devices Meeting, IEDM	34	0
66	2019	Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures	Tai A.-H; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	25	24
67	2018	Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well	Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU	Optical Materials Express	5	4
68	2018	Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs	Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU	International Electron Devices Meeting	22	0
69	2018	Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices	E. Bussmann; J. K. Gamble; J. C. Koepke; D. Laroche; S. H. Huang; Y. Chuang; Jiun-Yun Li; CHEE-WEE LIU ; B. S. Swartzentruber; M. P. Lilly; M. S. Carroll; T. M. Lu; JIUN-YUN LI ; 李峻霣	Physical Review Materials	2	1
70	2018	Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition	Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU	Thin Solid Films	9	9
71	2018	BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown.	Chen, Pin-Shiang; Lee, Shou-Chung; Oates, A. S.; Liu, Chee Wee; CHEE-WEE LIU	IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018	1	0
72	2018	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	26	23
73	2018	Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence	Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	5	5
74	2018	Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields	Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU	JETP Letters	3	3
75	2018	Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence	Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018	1	0
76	2018	First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching	Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	9	0
77	2018	Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization.	Luo, Zong-You; Tsou, Ya-Jui; Dong, Yi-Cheng; Lu, Ching; Liu, Chee Wee; CHEE-WEE LIU	Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018	10	0
78	2018	Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation	Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU	Digest of Technical Papers - Symposium on VLSI Technology	5	0
79	2018	Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications	Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	3	3
80	2018	Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices	Bussmann E; CHEE-WEE LIU et al.	Physical Review Materials	2	1
81	2017	Band calculation of lonsdaleite Ge	Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU	Journal of Physics D: Applied Physics	9	7
82	2017	Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys	Lan H.-S; Chang S.T; Liu C.W.; CHEE-WEE LIU	Physical Review B	24	22
83	2017	Indication of band flattening at the Fermi level in a strongly correlated electron system	Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU	Scientific Reports	22	22
84	2017	Process simulation of pulsed laser annealing on epitaxial Ge on Si	Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU	ECS Journal of Solid State Science and Technology	2	2
85	2017	Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack	Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	4	4
86	2017	Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs	Huang Y.-S; CHEE-WEE LIU et al.	Technical Digest - International Electron Devices Meeting, IEDM	6	0
87	2017	Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells	Melnikov M.Y; Dolgopolov V.T; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU	Journal of Applied Physics	10	10
88	2017	Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide	MING-HAN LIAO ; CHEE-WEE LIU	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017	4	0
89	2017	Effective g factor of low-density two-dimensional holes in a Ge quantum well	T. M. Lu; C. T. Harris; S. –H. Huang; Y. Chuang; JIUN-YUN LI ; CHEE-WEE LIU	Applied Physics Letters	15	11
90	2017	Solid solubility limited dopant activation of group III dopants (B, Ga & In) in Ge targeting sub-7nm node low p+ contact resistance	Borland J; Lee Y.-J; Chuang S.-S; Tseng T.-Y; CHEE-WEE LIU ; Huet K; Goodman G; Marino J.	17th International Workshop on Junction Technology, IWJT 2017	4	0
91	2017	High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing	Wong I.-H; Lu F.-L; Huang S.-H; Ye H.-Y; Lu C.-T; Yan J.-Y; Shen Y.-C; Peng Y.-J; Lan H.-S; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	4	0
92	2017	Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system	T. M. Lu; L. A. Tracy; D. Laroche; S. –H. Huang; Y. Chuang; Y. –H Su; JIUN-YUN LI ; CHEE-WEE LIU	Scientific Reports	9	7
93	2017	Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces	Lan H.-S; Liu C.W.; CHEE-WEE LIU	Journal of Physics D: Applied Physics	14	10
94	2017	High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness	Huang Y.-S; CHEE-WEE LIU et al.	IEEE Transactions on Electron Devices	25	23
95	2016	Strained Ge0.91Sn0.09Quantum Well p-MOSFETs	Huang Y.-S; Huang C.-H; Huang C.-H; Lu F.-L; Chang D.-Z; Lin C.-Y; Wong I.-H; Jan S.-R; Lan H.-S; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P; Chu S.S; Kuppurao S.	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016	0	0
96	2016	Low contact resistivity (1.5×10-8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealing	Huang, S.-H.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016	1	0
97	2016	Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation	Luo, S.; Eisler, C.; Wong, T.-H.; Xiao, H.; Lin, C.-E.; Wu, T.-T.; Shen, C.-H.; Shieh, J.-M.; Tsai, C.-C.; Liu, C.-W.; Atwater, H.A.; Goddard, W.A.; Lee, J.-H.; CHEE-WEE LIU ; JIUN-HAW LEE	Acta Materialia	14	13
98	2016	Modeling and simulation of TSV induced keep-out zone using silicon data	Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; CHEE-WEE LIU	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings	0	0
99	2016	Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells	Lin C.-Y; Huang C.-H; Huang S.-H; Chang C.-C; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P.	Applied Physics Letters	11	10
100	2016	Compact modeling and simulation of TSV with experimental verification	Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Liu, C.W.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016	1	0
101	2016	Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se<inf>2</inf> solar modules	Zhu, X.; Cheng, T.-H.; Liu, C.W.; CHEE-WEE LIU	Electronic Materials Letters	0	0
102	2016	The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance	Fan, S.-T.; Yan, J.-Y.; Lai, D.-C.; Liu, C.W.; CHEE-WEE LIU	Solid-State Electronics	8	7
103	2016	Advanced germanium channel transistors (invited)	Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; CHEE-WEE LIU	IEEE 11th International Conference on ASIC, ASICON 2015	0	0
104	2016	Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure	D. Laroche; S. –H. Huang; Y. Chuang; C. W. Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU	Applied Physics Letters	20	18
105	2016	High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential	Lu, T.M.; Laroche, D.; Huang, S.-H.; Chuang, Y.; CHEE-WEE LIU ; JIUN-YUN LI	Scientific Reports	2	2
106	2016	Abnormal threshold voltage shift of amorphous InGaZnO thin-film transistors due to mobile sodium	Lo C; Feng Z.-L; Huang W.-L; CHEE-WEE LIU ; Chen T.-L; Chou C.-H.	IEEE Journal of the Electron Devices Society	7	5
107	2016	Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates	Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	2	0
108	2016	Modeling and simulation of negative capacitance gate on Ge FETs	Liao, Y.-H.; Fan, S.-T.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	4	0
109	2016	Passivation of Al<inf>2</inf>O<inf>3</inf> / TiO<inf>2</inf> on monocrystalline Si with relatively low reflectance	Lu, C.-T.; Huang, Y.-S.; Liu, C.W.; CHEE-WEE LIU	Journal of Physics D: Applied Physics	4	3
110	2015	Reply to 'comment on 'A compact analytic model of the strain field induced by through ilicon vias''	Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	0	0
111	2015	Asymmetric keep-out zone of through-silicon via using 28-nm technology node	Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	3	2
112	2015	The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing	Huang, S.-H.; Lu, F.-L.; Huang, W.-L.; Huang, C.-H.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	36	31
113	2015	Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel	Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; Liu, C.W.; CHEE-WEE LIU	International Symposium on VLSI Technology, Systems, and Applications	0	0
114	2015	Antireflection of nano-sized SiO sphere arrays on crystalline silicon solar cells	Lu, C.-T.; Liu, C.W.; CHEE-WEE LIU	International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD	1	0
115	2015	Scattering mechanism in shallow undoped Si/SiGe quantum wells	D. Laroche; S. –H. Huang; E. Nielsen; Y. Chuang; Jiun-Yun Li; C. W. Liu; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU	AIP Advances	24	21
116	2015	Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si	Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Nanotechnology	25	25
117	2015	Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well	Melnikov, M.Yu.; Shashkin, A.A.; Dolgopolov, V.T.; Huang, S.-H.; Liu, C.W.; Kravchenko, S.V.; CHEE-WEE LIU	Applied Physics Letters	25	21
118	2015	Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure	Laroche, D.; Huang, S.-H.; Nielsen, E.; CHEE-WEE LIU ; JIUN-YUN LI ; Lu, T.M.	Applied Physics Letters	7	4
119	2015	In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement	Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU	International Electron Devices Meeting, IEDM	7	0
120	2015	Enhanced light emission from Ge by GeO<inf>2</inf> micro hemispheres	Chen, Y.-Y.; Yen, C.-C.; Chang, T.-Y.; Liu, C.W.; CHEE-WEE LIU	Solid-State Electronics	0	0
121	2015	Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry	Xie, D.; Qiu, Z.R.; Talwar, D.N.; Liu, Y.; Song, J.-H.; Huang, J.-L.; Mei, T.; Liu, C.W.; Feng, Z.C.; CHEE-WEE LIU	International Journal of Nanotechnology	3	2
122	2014	Gate-all-around Ge FETs	Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU	ECS Transactions	0	0
123	2014	Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors	Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	12	12
124	2014	Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs	Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	20	17
125	2014	Fabrication and characterization of Cu(In,Ga)Se<inf>2</inf> p-channel thin film transistors	Zhu, X.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	3	3
126	2014	Hysteresis reduction by fluorine incorporation into high permittivity tetragonal ZrO<inf>2</inf> on Ge	Chang, H.-C.; Lin, C.-M.; Huang, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	5	3
127	2014	New materials for post-Si computing	Liu, C.W.; \\Ostling, M.; Hannon, J.B.; CHEE-WEE LIU	MRS Bulletin	15	18
128	2014	Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation	Luo, S.; JIUN-HAW LEE ; CHEE-WEE LIU ; Shieh, J. M.; Shen, C. H.; Wu, T. T.; Jang, D. C.; Greer, J. R.	Applied Physics Letters	35	34
129	2014	Toward efficient and omnidirectional n-type si solar cells: Concurrent improvement in optical and electrical characteristics by employing microscale hierarchical structures	Wang, H.-P.; Lin, T.-Y.; Tsai, M.-L.; Tu, W.-C.; Huang, M.-Y.; Liu, C.-W.; Chueh, Y.-L.; He, J.-H.; CHEE-WEE LIU	ACS Nano	51	52
130	2014	Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells	Melnikov, M.Y.; Shashkin, A.A.; Dolgopolov, V.T.; Kravchenko, S.V.; Huang, S.-H.; Liu, C.W.; CHEE-WEE LIU	JETP Letters	14	13
131	2014	The pn junctions of epitaxial germanium on silicon by solid phase doping	Tu, W.-H.; Hsu, S.-H.; Liu, C.-W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	10	9
132	2014	Strain response of monolayer MoS<inf>2</inf> in the ballistic regime	Chang, H.-C.; Chen, P.-S.; Yang, F.-L.; Liu, C.W.; CHEE-WEE LIU	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014	0	0
133	2014	Ge gate-all-around FETs on Si	Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014	1	0
134	2014	Electron ballistic current enhancement of Ge<inf>1-x</inf>Sn<inf>x</inf> FinFETs	Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014	0	0
135	2013	EUV degradation of high performance Ge MOSFETs	Chen, Y.-T.; CHEE-WEE LIU et al.	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013	0	0
136	2013	Above-11%-efficiency organic-inorganic hybrid solar cells with omnidirectional harvesting characteristics by employing hierarchical photon-trapping structures	Wei, W.-R.; Tsai, M.-L.; Ho, S.-T.; Tai, S.-H.; Ho, C.-R.; Tsai, S.-H.; Liu, C.-W.; Chung, R.-J.; He, J.-H.; CHEE-WEE LIU	Nano Letters	163	160
137	2013	Realizing high-efficiency omnidirectional n-type Si solar cells via the hierarchical architecture concept with radial junctions	Wang, H.-P.; CHEE-WEE LIU et al.	ACS Nano	92	90
138	2013	Mobility strain response and low temperature characterization of Ge p-MOSFETs	Wong, I.-H.; Chen, Y.-T.; Ciou, H.-J.; Chen, Y.-S.; Yan, J.-Y.; Liu, C.W.; CHEE-WEE LIU	Device Research Conference, DRC	0	0
139	2013	Electrostatics and ballistic transport studies in junctionless nanowire transistors	Yu, T.-H.; Hsu, E.; Liu, C.-W.; Colinge, J.-P.; Sheu, Y.-M.; Wu, J.; Diaz, C.H.; CHEE-WEE LIU	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD	3	0
140	2013	Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration	Sun, H.Y.; Lien, S.-C.; Qiu, Z.R.; Wang, H.C.; Mei, T.; Liu, C.W.; Feng, Z.C.; CHEE-WEE LIU	Optics Express	20	16
141	2013	Radiation impact of EUV on high-performance Ge MOSFETs	Chen, Y.-T.; Chang, H.-C.; Wong, I.-H.; Sun, H.-C.; Ciou, H.-J.; Yeh, W.-T.; Luo, S.-J.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	2	2
142	2013	Study of MgxZn1-xO alloys (0<x<0.15) by x-ray absorption spectroscopy	Zheng, W.; Feng, Z.C.; Fan-Hsiu, C.; Lee, J.-F.; Zheng, R.S.; Wuu, D.-S.; CHEE-WEE LIU	Advanced Materials Research	6	0
143	2013	Enhanced current drive of double-gate α-IGZO thin-film transistors	Chen, T.-L.; Huang, K.-C.; Lin, H.-Y.; Chou, C.H.; Lin, H.H.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	34	28
144	2013	Modeling and optimization of edge dislocation stressors	Tsai, M.-H.; Jan, S.-R.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU	IEEE Electron Device Letters	3	3
145	2013	GeO<inf>2</inf> passivation for low surface recombination velocity on Ge surface	Chen, Y.-Y.; Chang, H.-C.; Chi, Y.-H.; Huang, C.-H.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	11	11
146	2013	Manganese K- and L3-edge X-ray absorption fine structure study of Zn1-xMnxTe	Zheng, W.; Jang, L.-Y.; Lee, J.-M.; Zheng, R.S.; CHEE-WEE LIU ; Becla, P.; Feng, Z.C.	Advanced Materials Research	3	0
147	2013	3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption	Zheng, W.; Feng, Z.C.; Zheng, R.S.; Jang, L.-Y.; Liu, C.W.; CHEE-WEE LIU	Materials Science Forum	2	0
148	2013	Improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics treated by remote NH <inf>3</inf> plasma	Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Lin, H.-C. ; Kuo, C.-L. ; Lee, M.-H.; CHEE-WEE LIU ; MIIN-JANG CHEN	Applied Surface Science	11	11
149	2013	Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness	Lin, C.-M.; Chang, H.-C.; Wong, I.-H.; Luo, S.-J.; Liu, C.W.; Hu, C.; CHEE-WEE LIU	Applied Physics Letters	19	19
150	2012	A compact analytic model of the strain field induced by through silicon vias	Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	17	16
151	2012	Surface passivation of Cu(In,Ga)Se <inf>2</inf> using atomic layer deposited Al <inf>2</inf>O <inf>3</inf>	Hsu, W.-W.; Chen, J.Y.; Cheng, T.-H.; Lu, S.C.; Ho, W.-S.; Chen, Y.-Y.; Chien, Y.-J.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	92	87
152	2012	4H-SiC wafers studied by X-ray absorption and Raman scattering	Xu, Q.; CHEE-WEE LIU et al.	Materials Science Forum	2	0
153	2012	Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si	Feng, Z.C.; Chen, C.; Xu, Q.; Mendis, S.P.; Jang, L.-Y.; Tin, C.-C.; Lee, K.-Y.; Liu, C.W.; Wu, Z.; KUNG-YEN LEE ; CHEE-WEE LIU	Materials Science Forum	1	0
154	2012	Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers	Talwar, D.N.; Feng, Z.C.; Liu, C.W.; Tin, C.-C.; CHEE-WEE LIU	Semiconductor Science and Technology	9	10
155	2012	Interfacial layer-free ZrO<inf>2</inf> on Ge with 0.39-nm EOT, κ?43, ?2×10<sup>-3</sup> A/cm<sup>2</sup> gate leakage, SS =85 mV/dec, I<inf>on</inf>/I<inf>off</inf> =6×10<sup>5</sup>, and high strain response	Lin, C.-M.; CHEE-WEE LIU et al.	International Electron Devices Meeting, IEDM	16	0
156	2012	Ge out diffusion effect on SiGe nanoring formation	Tu, W.-H.; Huang, S.-H.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	0	0
157	2012	First-principles study of GeO <inf>2</inf>/Ge interfacial traps and oxide defects	Lu, S.-C.; Chang, H.-C.; Chou, T.-P.; Liu, C.; CHEE-WEE LIU	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012	0	0
158	2012	SiGe nanoring formation	Tu, W.-H.; Huang, S.-H.; Liu, C.W.; CHEE-WEE LIU	International Silicon-Germanium Technology and Device Meeting, ISTDM 2012	0	0
159	2012	Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I <inf>on</inf> and nearly defect-free channels	Hsu, S.-H.; CHEE-WEE LIUet al.	International Electron Devices Meeting, IEDM	7	0
160	2012	Germanium gate-all-around pFETs on SOI	Chang, H.-C.; Hsu, S.-H.; Chu, C.-L.; Chen, Y.-T.; Tu, W.-H.; Sung, P.-J.; Luo, G.-Li.; Yin, Y.-C.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	1	0
161	2012	Reabsorption effects of direct band emission of Ge	Chen, Y.-Y.; Nien, Y.-H.; Chi, Y.-H.; Liu, C.W.; CHEE-WEE LIU	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012	0	0
162	2012	Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures	Huang, S.-H.; Lu, T.-M.; Lu, S.-C.; Lee, C.-H.; Liu, C.W.; Tsui, D.C.; CHEE-WEE LIU	Applied Physics Letters	27	26
163	2012	Hybrid CIS/Si near-IR sensor and 16% PV energy-harvesting technology	Shen, C.-H.; CHEE-WEE LIU et al.	International Electron Devices Meeting, IEDM	0	0
164	2012	Planar and 3D Ge FETs	Liu, C.W.; Chang, H.-C.; Lin, C.-M.; Chen, Y.-T.; CHEE-WEE LIU	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology	0	0
165	2012	LDMOS transistor high-frequency performance enhancements by strain	Chen, K.-M.; Huang, G.-W.; Chen, B.-Y.; Chiu, C.-S.; Hsiao, C.-H.; Liao, W.-S.; Chen, M.-Y.; Yang, Y.-C.; Wang, K.-L.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	15	12
166	2012	First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO <inf>2</inf> interface	Chang, H.-C.; Lu, S.-C.; Chou, T.-P.; Lin, C.-M.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	16	15
167	2012	Scanning electron beam induced deposition for conductive tip modification.	Chen, P. L.; Su, James; Shiao, M. H.; Chang, M. N.; Lee, C. H.; CHIH-WEN LIU ; CHEE-WEE LIU	7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, Kyoto, Japan, March 5-8, 2012	6	0
168	2012	Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors	Lu, T.M.; Pan, W.; Tsui, D.C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Physical Review B - Condensed Matter and Materials Physics	20	22
169	2012	Direct and indirect radiative recombination from Ge	Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; Jan, S.-R.; Chen, C.-Y.; Chan, S.T.; Nien, Y.-H.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU	Thin Solid Films	4	4
170	2012	Differential Gene Expression Between the Porcine Morula and Blastocyst	Hsu, C. C.; Lin, E. C.; Chen, S. C.; Huang, S. C.; Liu, B. H.; Yu, Y. H.; Chen, C. C.; Yang, C. C.; Lien, C. Y.; Wang, Y. H.; Liu, C. W.; Mersmann, H. J.; Cheng, W. T. K.; SHIH-TORNG DING ; CHIH-CHUNG YANG ; CHEE-WEE LIU ; EN-CHUNG LIN ; JERRY CHENG-CHE HSU	Reproduction in Domestic Animals	5	6
171	2012	A transition of three to two dimensional Si growth on Ge (100) substrate	Tu, W.-H.; Lee, C.-H.; Chang, H.T.; Lin, B.-H.; Hsu, C.-H.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	4	6
172	2011	Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors	Lu, T.M.; Lee, C.-H.; Huang, S.-H.; Tsui, D.C.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	22	21
173	2011	Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation	Chen, Y.-Y.; Chen, J.Y.; Hsu, R.-J.; Ho, W.S.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU	Journal of the Electrochemical Society	2	2
174	2011	Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates	Chen, Y.-T.; Lan, H.-S.; Hsu, W.; Fu, Y.-C.; Lin, J.-Y.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	10	9
175	2011	Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers	Lan, H.-S.; Chan, S.-T.; Cheng, T.-H.; Chen, C.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	22	20
176	2011	Effect of material physical properties on residual stress measurement by EDM hole-drilling method	Lee, H.T.; Tai, T.Y.; Liu, C.; Hsu, F.C.; Hsu, J.M.; CHEE-WEE LIU	Journal of Engineering Materials and Technology, Transactions of the ASME	5	2
177	2011	Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface	Ho, W.S.; Deng, Y.; Chen, Y.-Y.; Cheng, T.-H.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU	Thin Solid Films	0	0
178	2011	Bifacial CIGS (11% efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs	Hsiao, Y.-J.; Hsueh, T.-J.; Shieh, J.-M.; Yeh, Y.-M.; Wang, C.-C.; Dai, B.-T.; Hsu, W.-W.; Lin, J.-Y.; Shen, C.-H.; Liu, C.W.; Hu, C.; Yang, F.-L.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	8	0
179	2011	Synchrotron radiation X-ray absorption and optical studies of cubic SiC films grown on Si by chemical vapor deposition	Tu, Y.-L.; Huang, Y.-H.; Kong, L.; Lee, K.-Y.; Jang, L.-Y.; Tin, C.-C.; Liu, C.-W.; KUNG-YEN LEE ; CHEE-WEE LIU	Advanced Materials Research	0	0
180	2011	Physical mechanism of HfO<inf>2</inf>-based bipolar resistive random access memory	Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU	International Symposium on VLSI Technology, Systems, and Applications	14	0
181	2011	Influence of defects and interface on radiative transition of Ge	Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU	Applied Physics Letters	17	18
182	2011	High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate	Tang, S.-H.; Chang, E.Y.; Hudait, M.; Maa, J.-S.; Liu, C.-W.; Luo, G.-L.; Trinh, H.-D.; Su, Y.-H.; CHEE-WEE LIU	Applied Physics Letters	33	30
183	2011	A parameterized SPICE macromodel of resistive random access memory and circuit demonstration	Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD	5	0
184	2011	Defect related negative temperature coefficiency of short circuit current of Cu(In, Ga)Se <inf>2</inf> solar cells	Cheng, T.-H.; Chen, J.Y.; Hsu, W.W.; Liu, C.W.; Hsiao, C.Y.; CHIH-WEN LIU ; CHEE-WEE LIU	Conference Record of the IEEE Photovoltaic Specialists Conference	0	0
185	2011	Nearly defect-free Ge gate-all-around FETs on Si substrates	Hsu, S.-H.; CHEE-WEE LIU et al.	International Electron Devices Meeting, IEDM	17	0
186	2011	Electron scattering in Ge metal-oxide-semiconductor field-effect transistors	Lan, H.-S.; Chen, Y.-T.; Hsu, W.; Chang, H.-C.; Lin, J.-Y.; Chang, W.-C.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	13	11
187	2011	Germanium oxide passivation for Ge absorber	Chen, Y.-Y.; Chang, W.-C.; Chan, S.T.; Liu, C.W.; CHEE-WEE LIU	IEEE Photovoltaic Specialists Conference	1	0
188	2011	Recovery of light induced degradation of micromorph solar cells by reverse bias	Sun, H.-C.; Chen, W.-D.; Cheng, T.H.; Yang, Y.-J.; Liu, C.W.; Shih, H.-T.; CHEE-WEE LIU	ECS Transactions	1	0
189	2011	Ion implanted boron emitter N-silicon solar cells with wet oxide passivation	Ho, W.S.; Huang, Y.-H.; Hsu, W.-W.; Chen, Y.-Y.; Chen, Y.-Y.; CHIH-WEN LIU ; CHEE-WEE LIU	Conference Record of the IEEE Photovoltaic Specialists Conference	8	0
190	2011	Voltage linearity improvement of HfO<inf>2</inf>-based metal-insulator- metal capacitors with H<inf>2</inf> O prepulse treatment	Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; Chang, H.-L.; Liu, C.W.; CHEE-WEE LIU	Journal of the Electrochemical Society	4	3
191	2011	Toward an ideal animal model to trace donor cell fates after stem cell therapy: Production of stably labeled multipotent mesenchymal stem cells from bone marrow of transgenic pigs harboring enhanced green fluorescence protein gene	Hsiao F.S.H.; Lian W.S.; Lin S.P. ; Lin C.J.; Lin Y.S.; Cheng E.C.H.; Liu C.W. ; Cheng C.C.; Cheng P.H.; Ding S.T. ; Lee K.H.; Kuo T.F.	Journal of Animal Science	11	9
192	2010	Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure	Lu, T.M.; Lee, C.-H.; Tsui, D.C.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	1	1
193	2010	Enhanced voltage linearity of HfO<inf>2</inf> metal-insulator-metal capacitors by H<inf>2</inf>O prepulsing treatment on bottom electrode	Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	0	0
194	2010	Halo profile engineering to reduce Vt fluctuation in high-K/metal-gate nMOSFET	Chen, W.-Y.; Yu, T.-H.; Ohtou, T.; Sheu, Y.-M.; Wu, J.; Liu, C.; CHEE-WEE LIU	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD	2	0
195	2010	Capacitorless 1T memory cells using channel traps at grain boundaries	Chen, Y.-T.; Sun, H.-C.; Huang, C.-F.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU	IEEE Electron Device Letters	8	8
196	2010	Flexible single-crystalline Ge p-channel thin-film transistors with schottky-barrier source/drain on polyimide substrates	Hsu, W.; Peng, C.-Y.; Lin, C.-M.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	4	3
197	2010	Hexagonal SiGe quantum dots and nanorings on Si(110)	Lee, C.-H.; Liu, C.W.; Chang, H.-T.; Lee, S.W.; CHEE-WEE LIU	Journal of Applied Physics	11	10
198	2010	Insulating halos to boost planar NMOSFET performance	Hsu, W.-W.; Lai, C.-Y.; Liu, C.W.; Ko, C.-H.; Kuan, T.-M.; Wang, T.-J.; Lee, W.-C.; Wann, C.H.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	0	0
199	2010	Competitiveness between direct and indirect radiative transitions of Ge	Cheng, T.-H.; Ko, C.-Y.; Chen, C.-Y.; Peng, K.-L.; Luo, G.-L.; Liu, C.W.; Tseng, H.-H.; CHEE-WEE LIU	Applied Physics Letters	61	53
200	2010	Composition redistribution of self-assembled Ge islands on Si (001) during annealing	Lee, S.W.; Chang, H.T.; Lee, C.H.; Cheng, S.L.; Liu, C.W.; CHEE-WEE LIU	Thin Solid Films	8	7
201	2010	Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on flexible polyimide substrates	Hsu, W.; Lin, C.-M.; Peng, C.-Y.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; Liu, C.W.; CHEE-WEE LIU	International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010	0	0
202	2010	Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions	Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	Thin Solid Films	3	2
203	2010	Ultralow-power complementary metal-oxide-semiconductor inverters constructed on schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors	Ma, R.M.; Peng, R.M.; Wen, X.N.; Dai, L.; Liu, C.; Sun, T.; Xu, W.J.; Qin, G.G.; CHEE-WEE LIU	Journal of Nanoscience and Nanotechnology	0	0
204	2010	Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors	Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	2	3
205	2010	High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response	Fu, Y.-C.; CHEE-WEE LIU et al.	International Electron Devices Meeting, IEDM	12	0
206	2010	Strain-enhanced photoluminescence from Ge direct transition	Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; YUH-RENN WU ; CHEE-WEE LIU ; Tseng, H.-H.	Applied Physics Letters	81	70
207	2010	Stable flexible organic thin film transistor with self-assembled monolayers surface treatment	Liao, C.L.; Chou, C.C.; Liu, C.W.; Chiang, K.Y.; Leu, C.Y.; Ding, J.M.; Hu, J.P.; CHEE-WEE LIU	IDW'10 - Proceedings of the 17th International Display Workshops	0
208	2010	Surface orientation effects on SiGe quantum dots and nanorings formation	Lee, C.-H.; Tu, W.H.; Lin, C.-M.; Chang, H.T.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	0	0
209	2010	Metal-insulator-semiconductor photodetectors	Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	Sensors	148	134
210	2010	Erratum: Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s (Applied Physics Letters (2009) 94 (182102))	Lu, T.M.; Tsui, D.C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	6	8
211	2010	Thermal oxide, Al<inf>2</inf>O<inf>3</inf> and amorphous-Si passivation layers on silicon	Ho, W.S.; Chen, Y.-Y.; Cheng, T.-H.; Chen, J.-Y.; Lu, J.-A.; Huang, P.-L.; Liu, C.W.; CHEE-WEE LIU	IEEE Photovoltaic Specialists Conference	1	0
212	2010	Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer	Hsueh, H.T.; Hsueh, T.J.; Chang, S.J.; Hung, F.Y.; Hsu, C.L.; Weng, W.Y.; Liu, C.W.; Lee, Y.H.; Dai, B.T.; CHEE-WEE LIU	Electrochemical and Solid-State Letters	5	5
213	2010	Extrinsic effects of indirect radiative transition of Ge	Jan, S.-R.; Lee, C.-H.; Cheng, T.-H.; Chen, Y.-Y.; Peng, K.-L.; Chan, S.-T.; Liu, C.W.; Yuji, Y.; Bernd, T.; CHEE-WEE LIU	ECS Transactions	1	0
214	2010	Enhancements of direct band radiative recombination from Ge	Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Chan, S.T.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	0	0
215	2009	A design of 1T memory cells using channel traps for long data retention time	Chen, Y.-T.; Huang, C.-F.; Sun, H.-C.; Wu, T.-Y.; Ku, C.-Y.; Liu, C.W.; Hsu, Y.-C.; Chen, J.-S.; CHEE-WEE LIU	2009 International Semiconductor Device Research Symposium	0	0
216	2009	Luminescent-wavelength tailoring silicon-rich silicon nitride LED	Lin, C.-T.; Liu, C.; GONG-RU LIN ; CHEE-WEE LIU	Chinese Optics Letters	1	1
217	2009	Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide	Hsu, W.-L.; Lin, C.-T.; Cheng, T.-H.; Yen, S.-C.; Liu, C.-W.; Tsai, D.-P.; GONG-RU LIN ; CHEE-WEE LIU	Chinese Optics Letters	3	3
218	2009	Comparison on optimized optical transmission and electrical resistivity between indium tin oxide and gallium doped zinc oxide	Hsu, W.-L.; Meng, F.-S.; Lin, C.-T.; Liu, K.-C.; Cheng, T.-H.; Liu, C.-W.; Huang, J.; Lin, G.-R.; CHEE-WEE LIU	Materials Research Society Symposium
219	2009	Dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors	Huang, C.-F.; Sun, H.-C.; Kuo, P.-S.; Chen, Y.-T.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU	International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA	5	0
220	2009	Effects of applied mechanical uniaxial and biaxial tensile strain on the flatband voltage of (001), (110), and (111) metal-oxide-silicon capacitors	Peng, C.-Y.; Yang, Y.-J.; Fu, Y.-C.; Huang, C.-F.; Chang, S.-T.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	12	10
221	2009	Evolution of composition distribution of Si-capped Ge islands on Si(001)	Lee, S.W.; Lee, C.-H.; Chang, H.T.; Cheng, S.L.; Liu, C.W.; CHEE-WEE LIU	Thin Solid Films	10	10
222	2009	The dependence of the performance of strained NMOSFETs on channel width	Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	4	4
223	2009	Single crystalline film on glass for thin film solar cells	Lin, C.-H.; Yang, Y.-J.; Encinas, E.; Chen, W.-Y.; Tsai, J.-J.; Liu, C.W.; CHEE-WEE LIU	Journal of Nanoscience and Nanotechnology	2	2
224	2009	Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film	Hsu, W.-L.; Pai, Y.-H.; Meng, F.-S.; Liu, C.-W.; GONG-RU LIN ; CHEE-WEE LIU	Applied Physics Letters	17	15
225	2009	Comprehensive study of the Raman shifts of strained silicon and germanium	Peng, C.-Y.; Huang, C.-F.; Fu, Y.-C.; YI-HSUAN YANG ; Lai, C.-Y.; Chang, S.-T.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	73	70
226	2009	Electroluminescence from monocrystalline silicon solar cell	Cheng, T.-H.; Kuo, P.-S.; Ko, C.-Y.; Chen, C.-Y.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	13	11
227	2009	Optimization of a saddle-like FinFET by device simulation for sub-50nm DRAM application	Chang, H.-C.; Kuo, P.-S.; Peng, C.-Y.; Chen, Y.-T.; Chen, W.-Y.; Liu, C.W.; CHEE-WEE LIU	2009 International Semiconductor Device Research Symposium, ISDRS '09	2	0
228	2009	Si/ Si<inf>0.2</inf>Ge<inf>0.8</inf> /Si quantum well Schottky barrier diodes	Kuo, P.-S.; Peng, C.-Y.; Lee, C.-H.; Shen, Y.-Y.; Chang, H.-C.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	0	0
229	2009	Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s	Lu, T.M.; Tsui, D.C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	50	53
230	2009	Speedy hydrocarbon pollutants treatment through the cell interaction by a novel strain Rhodococcus: Its fundamental characteristics and applications	Liu, C.W.; Chang, W.N.; Liu, H.-S.; CHEE-WEE LIU	ACS National Meeting
231	2009	Improved SPICE macromodel of phase change random access memory	Chang, H.-L.; Chang, H.-C.; Yang, S.-C.; Tsai, H.-C.; Li, H.-C.; Liu, C.W.; CHEE-WEE LIU	2009 International Symposium on VLSI Design, Automation and Test	9	0
232	2009	Dynamic bias instability of p-channel polycrystalline-silicon thin-film transistors induced by impact ionization	Huang, C.-F.; Sun, H.-C.; Yang, Y.-J.; Chen, Y.-T.; Ku, C.-Y.; Liu, C.W.; Hsu, Y.-J.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU	IEEE Electron Device Letters	14	13
233	2009	A comprehensive study of Ge<inf>1-x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage	Luo, G.-L.; CHEE-WEE LIU et al.	International Electron Devices Meeting, IEDM	3	0
234	2009	Narrow-band metal-oxide-semiconductor photodetector	Ho, W.S.; Lin, C.-H.; Cheng, T.-H.; Hsu, W.W.; Chen, Y.-Y.; Kuo, P.-S.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	9	6
235	2009	Flexible Ge-on-polyimide detectors	Ho, W.S.; Dai, Y.-H.; Deng, Y.; Lin, C.-H.; Chen, Y.-Y.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	23	17
236	2009	SiGe nanorings by ultrahigh vacuum chemical vapor deposition	Lee, C.-H.; Shen, Y.-Y.; Liu, C.W.; Lee, S.W.; Lin, B.-H.; Hsu, C.-H.; CHEE-WEE LIU	Applied Physics Letters	16	13
237	2008	應用於CMOS影像感測器上的透明膜玻璃雷射切割技術	劉致為
238	2008	應用於矽/鍺奈米尺寸堆疊結構之表面與應力研究　（新制多年期第2年）	劉致為
239	2008	應用於矽/鍺奈米尺寸堆疊結構之表面與應力研究　（新制多年期第1年）	劉致為
240	2008	長波長矽鍺金氧半光電元件(3/3)	劉致為
241	2008	先進CMOS元件及製程研究－子計畫四：遷移率增強技術(3/3)	劉致為
242	2008	應用電漿浸沒離子佈植(PIII)與晶圓鍵結技術製造SOI及GOI半導體材料研究(1/3)	劉致為
243	2008	Metal Oxide Semiconductor UV Sensor	Ho, W.S.; Lin, C.-H.; Kuo, P.-S.; Hsu, W.W.; Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; CHEE-WEE LIU	IEEE Sensors	3	0
244	2008	2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions	Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO	Journal of Applied Physics	22	19
245	2008	Investigation of reliability characteristics in NMOS and PMOS FinFETs	Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chakraborty, S.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	30	26
246	2008	Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing	Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU	Applied Surface Science	3	2
247	2008	Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor deposition	Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Surface Science	2	1
248	2008	Superior n-MOSFET performance by optimal stress design	Liao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	15	12
249	2008	Fano interference in the quantum wellquantum dot system	Abramov, A.A.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	International Journal of Nanoscience
250	2008	SiGe/Si quantum-dot infrared photodetectors with δ doping	Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU	IEEE Transactions on Nanotechnology	6	6
251	2008	Carrier gas effects on the SiGe quantum dots formation	Lee, C.-H.; Yu, C.-Y.; Lin, C.M.; Liu, C.W.; Lin, H.; Chang, W.-H.; CHEE-WEE LIU	Applied Surface Science	2	2
252	2008	Comprehensive study of bias temperature instability on polycrystalline silicon thin-film transistors	Huang, C.-F.; Chen, Y.-T.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Lin, K.-C.; Chen, J.-S.; CHEE-WEE LIU	International Conference on Solid-State and Integrated Circuits Technology, ICSICT	3	0
253	2008	Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor	Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO	Applied Physics Letters	13	11
254	2008	Micro-Raman studies on nickel germanides formed on (110) crystalline Ge	Peng, C.-Y.; Huang, C.-F.; Yang, Y.-J.; Liu, C.W.; CHEE-WEE LIU	ECS Transactions	4	0
255	2008	A new NBTI characterization method on polycrystalline silicon thin-film transistors	Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU	IDW '08 - 15th International Display Workshops
256	2008	Polarity change of threshold voltage shifts for n-channel polycrystalline silicon thin-film transistors stressed by negative gate bias	Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU	ECS Transactions	1	0
257	2008	PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiN<inf>x</inf> stressing layer	Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chen, K.-M.; Huang, S.-Y.; Peng, C.-Y.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	28	26
258	2008	Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes	Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	3	3
259	2008	PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer	Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee	IEEE Electron Device Letters
260	2008	Studying the strain effect on silicon atomic wires	Liao, S.-H.; Chang, S.-T.; Huang, H.-C.; Liu, C.-W.; Lin, C.-Y.; CHEE-WEE LIU	Journal of the Korean Physical Society
261	2008	SiGe quantum rings by ultra-high vacuum chemical vapor deposition	Lee, C.-H.; Lin, C.M.; Liu, C.W.; Chang, H.T.; Lee, S.W.; Shushpannikov, P.; Gorodtsov, V.A.; Goldstein, R.V.; CHEE-WEE LIU	ECS Transactions	2	0
262	2008	Logic 90 nm n-channel field effect transistor current and speed enhancements through external mechanical package straining	Liao, W.-S.; Huang, S.-Y.; Tang, M.-C.; Liaw, Y.-G.; Chen, K.-M.; Shih, T.; Tsen, H.-C.; Chung, L.; Liu, C.W.; CHEE-WEE LIU	Japanese Journal of Applied Physics	1	1
263	2008	Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors	Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO	Journal of Applied Physics	8	7
264	2008	Process strain induced by nickel germanide on (100) Ge substrate	Peng, C.-Y.; YI-HSUAN YANG ; Lin, C.-M.; Yang, Y.-J.; Huang, C.-F.; Liu, C.W.; CHEE-WEE LIU	International Conference on Solid-State and Integrated Circuits Technology, ICSICT	3	0
265	2008	Reduction of crosstalk between dual power amplifiers using laser treatment	Chang, H.-L.; Kuo, P.-S.; Hua, W.-C.; Lin, C.-P.; Lin, C.-Y.; Liu, C.W.; CHEE-WEE LIU	IEEE Microwave and Wireless Components Letters	0	0
266	2008	Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors	Huang, C.-F.; Peng, C.-Y.; Yang, Y.-J.; Sun, H.-C.; Chang, H.-C.; Kuo, P.-S.; Chang, H.-L.; Liu, C.-Z.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	63	58
267	2007	先進CMOS元件及製程研究－子計畫四：遷移率增強技術(2/3)	劉致為
268	2007	長波長矽鍺金氧半光電元件(2/3)	劉致為
269	2007	Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition	Chen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee	IEEE Transactions on Electron Devices	33	30
270	2007	Superior n-MOSFET performance by optimal stress design	Yang, Y.-J.; Liao, M.H. ; Liu, C.W.Yeh, L., Lee, T.-L., Liang, M.-S.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU	2007 International Semiconductor Device Research Symposium	1	0
271	2007	Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime	Yang, Y.-J.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	International Symposium on VLSI Technology, Systems, and Applications	2	0
272	2007	Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes	Jan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007	0	0
273	2007	Mobility enhancement technology	Yuan, F.; Liu, C.W.; CHEE-WEE LIU	ICSICT-2006: 8th International Conference on Solid-State and Integrated Circuit Technology	2	0
274	2007	Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si	Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	27	27
275	2007	Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors	Ho, W. S.; Huang, C.-F.; Chang, S. T.; CHEE-WEE LIU ; YAO-JOE YANG	Applied Physics Letters	103	98
276	2007	Dark current reduction of Ge MOS photodetectors by high work function electrodes	Kuo, P.-S.; Fu, Y.-C.; Chang, C.-C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Electronics Letters	6	6
277	2007	Transport mechanism of SiGe dot MOS tunneling diodes	Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	2	2
278	2007	Broadband SiGeSi quantum dot infrared photodetectors	Lin, C.-H.; Yu, C.-Y.; Peng, C.-Y.; Ho, W.S.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	22	21
279	2007	Electrically pumped Ge laser at room temperature	Cheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; CHEE-WEE LIU	International Electron Devices Meeting	9	0
280	2007	The intermixing and strain effects on electroluminescence of SiGe dots	MING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU	Journal of Applied Physics	29	29
281	2007	Ge-on-glass detectors	Lin, C.-H.; Chiang, Y.-T.; Hsu, C.-C.; Lee, C.-H.; Huang, C.-F.; Lai, C.-H.; Cheng, T.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	15	12
282	2007	Novel transport mechanism of SiGe dot MOS tunneling diodes	Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W.; CHEE-WEE LIU	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007	0	0
283	2007	Electroluminescence from strained SiGe quantum dot light-emitting diodes	Cheng, T.-H.; Liao, M.H. ; CHEE-WEE LIU	7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007	0	0
284	2007	Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate	Maikap, S.; Lee, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	Semiconductor Science and Technology	26	26
285	2007	Performance enhancement of the nMOSFET low-noise amplifier by package strain	Hua, W.-C.; Chang, H.-L.; Wang, T.; Lin, C.-Y.; Lin, C.-P.; Lu, S.S.; Meng, C.C.; Liu, C.W.; SHEY-SHI LU ; CHEE-WEE LIU	IEEE Transactions on Electron Devices	1	1
286	2007	Comprehensive study on dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors	Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Chao, C.-W.; Lin, K.-C.; CHEE-WEE LIU	2007 International Semiconductor Device Research Symposium	0	0
287	2006	SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance	Shi, J.-W.; Chiu, P.-H.; Huang, F.-H.; Wu, Y.-S.; Lu, J.-Y.; CHI-KUANG SUN ; CHEE-WEE LIU ; Chen P.-S.	Applied Physics Letters	6	4
288	2006	The interface properties of SiO<inf>2</inf>/strained-si with carbon incorporation surface channel MOSFETs	Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU	Third International SiGe Technology and Device Meeting, ISTDM 2006
289	2006	Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes	Liao, M.H.; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU	Third International SiGe Technology and Device Meeting, ISTDM 2006
290	2006	Strained Pt Schottky diodes on n-type Si and Ge	Liao, M.H.; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W.; CHEE-WEE LIU	Third International SiGe Technology and Device Meeting, ISTDM 2006
291	2006	Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors	Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU	Japanese Journal of Applied Physics Part1	2	2
292	2006	MOS Si/Ge photodetectors	Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	Proceedings of SPIE - The International Society for Optical Engineering	0	0
293	2006	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU	Solid-State Electronics	14	14
294	2006	Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors	Huang, C.-F.; YING-JAY YANG ; Peng, C.-Y.; Yuan, F.; CHEE-WEE LIU	Applied Physics Letters	23	17
295	2006	Differential power combining technique for general power amplifiers using lumped component network	Chang, H.-L.; Lin, P.-T.; Hua, W.-C.; Lin, C.-P.; Lin, C.-Y.; Liu, C.W.; Yang, T.-Y.; Ma, G.-K.; CHEE-WEE LIU	Asia-Pacific Microwave Conference Proceedings, APMC	0	0
296	2006	delta-Doped MOS Ge/Si quantum dot/well infrared photodetector	Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; CHEE-WEE LIU ; CHIEN-CHENG CHANG	Thin Solid Films	16	14
297	2006	A PDMS mold with embedded sensory array for micromolding processes	Luo, R.C.; Lin, C.F.; REN-CHYUAN LUO ; CHEE-WEE LIU	IECON Proceedings (Industrial Electronics Conference)	0	0
298	2006	Strained Pt Schottky diodes on n-type Si and Ge	Liao, M.H.; Kuo, P.-S.; Jan, S.-R.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	29	27
299	2006	Infrared emission from Ge metal-insulator-semiconductor tunneling diodes	MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU	Applied Physics Letters	29	31
300	2006	Low-temperature fabrication and characterization of Ge-on-insulator structures	Yu, C.-Y.; Lee, C.-Y.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	26	23
301	2006	Performance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain	Yuan, Feng; Huang, Ching-Fang; Yu, Ming-Hsin; Liu, Chee Wee	IEEE Transactions on Electron Devices	14	12
302	2006	Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots	Lee, S.W.; Chen, P.S.; Chien, T.Y.; Chen, L.J.; Chia, C.T.; Liu, C.W.; CHEE-WEE LIU	Thin Solid Films	7	8
303	2006	The process and optoelectronic characterization of Ge-on-insulator	Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; CHEE-WEE LIU	ECS Transactions	1	0
304	2006	Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors	Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
305	2006	Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology	Wu, San Lein; Lin, Yu Min; Chang, Shoou Jinn; Lu, Shin Chi; Chen, Pang Shiu; Liu, Chee Wee	IEEE Electron Device Letters	19	16
306	2006	Field-emission properties of self-assembled Si-capped Ge quantum dots	Lee, S.W.; Chueh, Y.L.; Chen, H.C.; Chen, L.J.; Chen, P.S.; Chou, L.J.; Liu, C.W.; CHEE-WEE LIU	Thin Solid Films	3	3
307	2006	Electroluminescence from the Ge quantum dot MOS tunneling diodes	MING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU	IEEE Electron Device Letters	30	29
308	2006	Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs	Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU	Semiconductor Science and Technology	3	2
309	2006	Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si nMOSFETs with HfO<inf>2</inf> gate dielectric	Yeo, C.C.; Cho, B.J.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; CHEE-WEE LIU	Semiconductor Science and Technology	1	1
310	2006	Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate	Yeo, C.C.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; Cho, B.J.; CHEE-WEE LIU	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	0	0
311	2006	Imapct of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-si technology	Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU	Third International SiGe Technology and Device Meeting, ISTDM 2006
312	2006	Buckling characteristics of SiGe layers on viscous oxide	Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU	Journal of Applied Physics	3	3
313	2005	前瞻矽鍺/高介電質/金屬閘極元件及模組技術 – 子計畫四：矽鍺/高介電質/金屬閘極光電元件與模組技術(I)	劉致為
314	2005	前瞻矽鍺/高介電質/金屬閘極元件及模組技術 –總計劃(I)	劉致為
315	2005	Mobility-enhancement technologies	Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee	IEEE Circuits and Devices Magazine	102	0
316	2005	Strained CMOS technology with Ge	Chen, P.S.; Lee, M.H.; Lee, S.W.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU	Proceedings of Electrochemical Society
317	2005	Novel schottky barrier strained germanium PMOS	Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	2005 International Semiconductor Device Research Symposium
318	2005	Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers	Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU	Applied Physics Letters	13	12
319	2005	Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source	Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	Materials Science in Semiconductor Processing	8	12
320	2005	Electroluminescence from metal/oxide/strained-Si tunneling diodes	MING-HAN LIAO ; MIIN-JANG CHEN ; Chen, T. C.; Wang, P. L.; CHEE-WEE LIU	Applied Physics Letters	64	42
321	2005	Threading dislocation induced low frequency noise in strained-Si nMOSFETs	Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	34	31
322	2005	Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stress	Yang, I.-J.; Peng, C.-Y.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	2005 International Semiconductor Device Research Symposium
323	2005	The characteristic of HfO2 on strained SiGe	Chen, T.C.; Lee, L.S.; Lai, W.Z.; Liu, C.W.; CHEE-WEE LIU	Materials Science in Semiconductor Processing	11	11
324	2005	Formation of SiCH <inf>6</inf>-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition	Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	7	8
325	2005	Abnormal hole mobility of biaxial strained Si	MING-HAN LIAO ; Chang, S. T.; Lee, M. H.; Maikap, S.; CHEE-WEE LIU	Journal of Applied Physics	19	20
326	2005	應變矽技術之元件最佳化與缺陷減低(3/3)	劉致為
327	2005	2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features	Liao, M.H.; CHEE-WEE LIU et al.	International Electron Devices Meeting, IEDM
328	2005	Visible photoluminescence from Ge quantum dots	Sun, K.W.; Sue, S.H.; Liu, C.W.; CHEE-WEE LIU	Physica E: Low-Dimensional Systems and Nanostructures	35	33
329	2005	SiGe/Si PMOSFET using graded channel technique	Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU	Materials Science in Semiconductor Processing	8	6
330	2005	Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer	Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	3	4
331	2005	Electron mobility enhancement using ultrathin pure Ge on Si substrate	Yeo, C.C.; Cho, B.J.; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.; CHEE-WEE LIU	IEEE Electron Device Letters	53	41
332	2005	High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control	Hua, Wei-Chun; Lai, Hung-Hui; Lin, Po-Tsung; Liu, Chee Wee; Yang, Tzu-Yi; Ma, Gin-Kou; CHEE-WEE LIU	IEEE Radio Frequency Integrated Circuits Symposium	26	0
333	2005	Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing	Liao, K.F.; Chen, P.S.; Lee, S.W.; Chen, L.J.; Liu, C.W.; CHEE-WEE LIU	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	10	10
334	2004	增強照射均勻度的快熱製程機台反射體之製作與可靠度測試	劉致為
335	2004	奈米電子	劉致為 ; 李敏鴻; 魏拯華
336	2004	Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation	Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU	Solid-State Electronics	6	8
337	2004	MEXTRAM modeling of Si-SiGe HPTs	Yuan, F.; Shi, J.-W.; Pei, Z.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	14	13
338	2004	Performance enhancement of high-speed SiGe-based heterojunction phototransistor with substrate terminal	Shi, J.-W.; Pel, Z.; Yuan, F.; Hsu, Y.-M.; Liu, C.-W.; Lu, S.C.; Tsai, M.-J.; CHEE-WEE LIU	Applied Physics Letters	6	5
339	2004	The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier	Hua, W.-C.; Yang, T.-Y.; Liu, C.W.; CHEE-WEE LIU	Applied Surface Science	3	0
340	2004	The evolution of electroluminescence in Ge quantum-dot diodes with the fold number	Peng, Y.H.; Hsu, C.-H.; CHIEH-HSIUNG KUAN ; CHEE-WEE LIU ; Chen, P.S.; Tsai, M.-J.; Suen, Y.W.	Applied Physics Letters	18	17
341	2004	Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD	Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU	Electrochemical and Solid-State Letters	10	10
342	2004	Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers	Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU	International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
343	2004	Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors	Shi, Jin-Wei; Liu, Yin-Hsin; Liu, Chee-Wee	Journal of Lightwave Technology
344	2004	Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation	Yu C.-Y; Chen T.C; Lee M.H; Huang S.-H; Lee L.S; CHEE-WEE LIU	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA	1
345	2004	Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments	Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU	Applied Surface Science	6	6
346	2004	Mechanically strained Si-SiGe HBTs	Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	15	12
347	2004	應變矽技術之元件最佳化與缺陷減低(2/3)	劉致為
348	2004	Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers	Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.-J.; CHEE-WEE LIU	IEEE Electron Device Letters	34	32
349	2004	Strained Si<inf>1-x</inf>C<inf>x</inf> field effect transistor on SiGe substrate	Chang, S.T.; Lee, M.-H.; Lu, S.C.; Liu, C.W.; CHEE-WEE LIU	Proceedings of Electrochemical Society
350	2004	Package-strain-enhanced device and circuit performance	Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	21	0
351	2004	BICMOS devices under mechanical strain	Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU	Proceedings of the Electrochemical Society
352	2004	The growth of high-quality SiGe films with an intermediate Si layer	Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU	Thin Solid Films	9	7
353	2004	Evidence of SiSiGe heterojunction roughness scattering	Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU	Applied Physics Letters	4	3
354	2004	CMOS optoelectronics	Liu, C.W.; Hsu, B.-C.; CHEE-WEE LIU	Electrochemical Society
355	2004	可供四吋到八吋及破片作晶圓鍵結之快熱製程機台(Ⅱ)	劉致為
356	2004	Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs	Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU	IEEE Electron Device Letters	59	52
357	2004	Mechanically Strained Strained-Si NMOSFETs	Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	24	21
358	2004	矽新型元件及模組技術研發─子計畫二:矽(鍺)CMOS光電技術及光連接應用(3/3)	劉致為
359	2004	Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectors	Shi, J.-W.; Liu, Y.-H.; Liu, C.-W.; CHEE-WEE LIU	Journal of Lightwave Technology	17	14
360	2004	Electrical and optical reliability improvement of HfO<inf>2</inf> gate dielectric by deuterium and hydrogen incorporation	Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU	International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
361	2004	Hole effective mass in strained Si<inf>1-x</inf>C<inf>x</inf> alloys	Lin, C.Y.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	8	6
362	2004	Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer	Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU	Physica Status Solidi (B) Basic Research	4	4
363	2004	Light emission from Al/HfO2/silicon diodes	Chen, T. C.; Lai, W. Z.; Liang, C. Y.; MIIN-JANG CHEN ; Lee, L. S.; CHEE-WEE LIU	Journal of Applied Physics	10	10
364	2004	Electroluminescence evolution of Ge quantum-dot diodes with the fold number	Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHEE-WEE LIU	OSA Trends in Optics and Photonics Series
365	2004	Novel MIS Ge-Si quantum-dot infrared photodetectors	Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN	IEEE Electron Device Letters	21	21
366	2003	MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses	Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; CHEE-WEE LIU	Semiconductor Device Research Symposium, 2003 International	0	0
367	2003	CMOS光電元件	劉致為
368	2003	Mextram modeling of Si/SiGe heterojunction phototransistors	Yuan, F.; Pei, Z.; Shi, J.W.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU	2003 International Semiconductor Device Research Symposium, ISDRS 2003	3	0
369	2003	Strain-induced growth of SiO<inf>2</inf> dots by liquid phase deposition	Liu, C.W.; Hsu, B.-C.; Chen, K.-F.; Lee, M.H.; Shie, C.-R.; Chen, P.-S.; CHEE-WEE LIU	Applied Physics Letters	2	1
370	2003	應變矽技術之元件最佳化與缺陷減低(1/3)	劉致為
371	2003	Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes	Chen, Miin-Jang ; Chang, Jui-Fen; Yen, Jia-Liang; Tsai, Chen S.; Liang, Eih-Zhe; Lin, Ching-Fuh ; CHEE-WEE LIU	Journal of Applied Physics	16	14
372	2003	Analysis on the temperature dependent characteristics of SiGe HBTs	Liang, C.-S.; Pei, Z.; Hsu, Y.-M.; Pan, T.-M.; Liu, Y.-H.; Liu, C.W.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings	0	0
373	2003	Optimal SiGe:C HBT module for BiCMOS applications	Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU	International Symposium on VLSI Technology, Systems, and Applications, Proceedings	3	0
374	2003	用於快熱製程機台的新型多平面反射體設計與製作	劉致為
375	2003	A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor	Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	41	34
376	2003	Reliability Improvement of Rapid Thermal Oxide Using Gas Switching	Lee, Min Hung; Yu, Cheng-Ya; Yuan, Fon; Chen, K.-F.; Lai, Chang-Chi; Liu, Chee Wee	IEEE Transactions on Semiconductor Manufacturing	2	0
377	2003	A high efficient 820 nm MOS Ge quantum dot photodetector	Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	58	47
378	2003	Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate	Chang, S.T.; Liu, Y.H.; Liu, C.W.; CHEE-WEE LIU	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings	3	0
379	2003	Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs	Lee, M.H.; CHEE-WEE LIU et al.	International Electron Devices Meeting
380	2003	矽新型元件及模組技術研發(2/3)─子計畫二:矽(鍺)CMOS光電技術及光連接應用	劉致為
381	2003	可供四吋到八吋及破片作晶圓鍵結之快熱製程機台	劉致為
382	2003	Radiative and nonradiative recombinations in efficient light-emitting metal-oxide-silicon tunneling diodes	Chen, M.-J.; Chang, J.-F.; Liang, E.-Z.; Lin, C.-F.; Liu, C.W.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN	Proceedings of SPIE - The International Society for Optical Engineering	0	0
383	2003	Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity	Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU	2003 International Semiconductor Device Research Symposium, ISDRS 2003	0	0
384	2003	Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method	CHING-FUH LIN ; Su, Ting-Wien; Chung, Peng-Fei; Liang, Eih-Zhe; MIIN-JANG CHEN ; CHEE-WEE LIU	Materials Chemistry and Physics	4	3
385	2003	Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si	Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.; CHEE-WEE LIU	Applied Physics Letters	55	50
386	2003	Growth and electrical characteristics of liquid-phase deposited SiO<inf>2</inf> on Ge	Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; Liu, C.W.; CHEE-WEE LIU	Electrochemical and Solid-State Letters	10	9
387	2003	Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes	Lin, C.-H.; Yuan, F.; Hsu, B.-C.; Liu, C.W.; CHEE-WEE LIU	Solid-State Electronics	4	3
388	2002	矽新型元件及模組技術研發(1/3)─子計畫二:矽(鍺)CMOS光電技術及光連接應用	劉致為
389	2002	快速熱機台設備及製程研發(3/3)─子計畫二超高真空快熱化學沉積反應機台之製作與應用	劉致為
390	2002	奈米技術及產業通識教材(3)奈米電子元件	劉致為 ; 游李興
391	2002	Roughness-enhanced reliability of MOS tunneling diodes	Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W. ; CHEE-WEE LIU	IEEE Electron Device Letters	6	7
392	2002	The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake	Lee, Min-Hung; Chen, Kuan-Fu; Lai, Chang-Chi; Liu, Chee Wee ; Pai, Woei-Wu ; Chen, Miin-Jang ; Lin, Ching-Fuh	Japanese Journal of Applied Physics	10	10
393	2002	Oxide roughness effect on tunneling current of MOS diodes	Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	16	12
394	2002	Energy band structure of strained Si 1-xC x alloys on Si (001) substrate	Chang, S.T.; Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU	Journal of Applied Physics	16	14
395	2002	High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET	Chen, P.S.; Tseng, Y.T.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	2002 Semiconductor Manufacturing Technology Workshop, SMTW 2002	2	0
396	2002	High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity	Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU	International Electron Devices Meeting, IEDM
397	2002	Self-correction two-machine equivalent model for stability control of FACT system using real-time phasor measurements	Yu, C.-S.; CHEE-WEE LIU	IEE Proceedings: Generation, Transmission and Distribution	19	15
398	2002	Photoluminescence and electroluminescence studies on ITO/SiO<inf>2</inf>/Si tunneling diodes for efficient light emission from silicon	Chen, M.-J.; Chang, J.-F.; Tsai, C.S.; Liang, E.-Z.; Lin, C.-F.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN	Proceedings of SPIE - The International Society for Optical Engineering	0	0
399	2002	High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm)	Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU	International Electron Devices Meeting, IEDM
400	2002	The band-edge light emission from the metal-oxide-silicon tunneling diode on (1 1 0) substrates	Chang, S. T.; Chen, K.F.; Shie, C. R.; Liu, C. W.; Chen, Miin-Jang ; Lin, Ching-Fuh; CHING-FUH LIN ; CHEE-WEE LIU	Solid-State Electronics	8	7
401	2002	Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures	Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Liu, C.W.; Mao, M.-H.; Yang, C.-C.; Lin, Y.-S.; Ma, K.-J.; MING-HUA MAO ; CHIH-WEN LIU ; CHIH-CHUNG YANG ; CHEE-WEE LIU	Proceedings of SPIE-The International Society for Optical Engineering	1	0
402	2001	具網路結合功能之半導體製造集結式機台─子計畫二：用於12吋晶圓製造之前段製程技術(3/3)	劉致為
403	2001	Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes	MIIN-JANG CHEN ; CHING-FUH LIN ; Lee, M. H.; Chang, S. T.; CHEE-WEE LIU	Applied Physics Letters	10	10
404	2001	Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact	CHING-FUH LIN ; MIIN-JANG CHEN ; Chang, Shu-Wei; Chung, Peng-Fei; Liang, Eih-Zhe; Su, Ting-Wien; CHEE-WEE LIU	Applied Physics Letters	4	3
405	2001	A PMOS tunneling photodetector	Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	27	20
406	2001	Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation	CHEE-WEE LIU ; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; MIIN-JANG CHEN ; CHING-FUH LIN	Applied Physics Letters	8	8
407	2001	Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes	CHING-FUH LIN ; MIIN-JANG CHEN ; Lee, Ming-Hung; CHEE-WEE LIU	Proceedings of SPIE - The International Society for Optical Engineering	0	0
408	2001	Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes	Lin, C.-H.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	10	8
409	2001	Oxide roughness enhanced reliability of MOS tunneling diodes	Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; Liu, C.W.; CHEE-WEE LIU	2001 International Semiconductor Device Research Symposium, ISDRS 2001	1	0
410	2001	快速熱機台設備及製程研發(2/3)─子計畫二:超高真空快熱化學沉積反應機台之製作與應用	劉致為
411	2001	Optimum Ge profile design for base transit time minimization of SiGe HBT	Chang, S.T.; Liu, C.W.; Lin, C.-H.; CHEE-WEE LIU	Asia-Pacific Microwave Conference Proceedings, APMC
412	2001	An on-line fault estimation in distribution substations using improved cause-effect networks	Chen, W.-H.; Liu, C.-W.; Tsai, M.-S.; CHEE-WEE LIU	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
413	2001	Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs	Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU	2001 International Semiconductor Device Research Symposium, ISDRS 2001	0	0
414	2001	Novel methods to incorporate deuterium in the MOS structures	Lee, M.H.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	7	7
415	2001	Asymmetrical X-ray reflection of SiGeC/Si heterostructures	CHEE-WEE LIU ; Tseng, Y. D.; MING-YAU CHERN	Materials Chemistry and Physics	0	0
416	2001	A novel illuminator design in a rapid thermal processor	Lee, M.H.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Semiconductor Manufacturing	6	0
417	2001	A comprehensive study of inversion current in MOS tunneling diodes	Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	36	35
418	2001	Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures	MIIN-JANG CHEN ; CHING-FUH LIN ; Liu, W. T.; Chang, S. T.; CHEE-WEE LIU	Journal of Applied Physics	13	13
419	2001	Improved optimal aim strategy based multiple TCSC controllers for transient stability control of interconnected power system	Yu, C.-S.; Liu, C.-W.; Jiang, J.-A.; CHEE-WEE LIU	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
420	2001	Novel photodetectors using metal-oxide-silicon tunneling structures	Hsu, B.-C.; Liu, W.T.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU	2001 International Semiconductor Device Research Symposium, ISDRS 2001	0	0
421	2001	Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement	Lin, Ching-Fuh ; Chen, Miin-Jang ; Liang, Eih-Zhe; Liu, W. T.; CHEE-WEE LIU	Applied Physics Letters	3	3
422	2000	快速熱機台設備及製程研發(1/3)─子計畫二:超高真空快熱化學沉積反應機台之製作與應用	劉致為
423	2000	Metal-oxide-semiconductor light-emitting diodes at Si bandgap energy	Chen, Miin-Jang; Lin, Ching-Fuh; Chiu, Jiann Jong; Liu, Cheewee; Chang, Shu-Wei; CHEE-WEE LIU	Conference on Lasers and Electro-Optics Europe
424	2000	Analytic modeling of the subthreshold behavior in MOSFET	Liu, C.W.; Hsieh, T.X.; CHEE-WEE LIU	Solid-State Electronics	6	3
425	2000	Electroluminescence at Si band gap energy based on metal–oxide–silicon structures	CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN ; Lee, M. H.; Lin, I. C.	Journal of Applied Physics	41	0
426	2000	Structural, optical and electrical characteristics of silicon carbon nitride	Chen, L.C.; Wu, C.T.; Wen, C.-Y.; Wu, J.-J.; Liu, W.T.; Liu, C.W.; CHEE-WEE LIU	Materials Research Society Symposium
427	2000	Infrared studies of laser induced oxide on (1 0 0) Si and SiGe layers	CHEE-WEE LIU ; Huang, Y.S.; Chen, C.Y.; Gurtler, S.; CHIH-CHUNG YANG ; Chang, Y.; Chen, L.P.	Materials Chemistry and Physics	2	2
428	2000	Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes	Liu, C.W.; Lee, M.H.; Chen, M.-J.; Lin, I.C.; Lin, C.-F.; CHEE-WEE LIU	Applied Physics Letters
429	2000	Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes	CHEE-WEE LIU ; MIN-HUNG LEE ; MIIN-JANG CHEN ; CHING-FUH LIN ; MING-YAU CHERN	IEEE Electron Device Letters	39	34
430	2000	Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes	CHEE-WEE LIU ; Chang, S. T.; Liu, W. T.; MIIN-JANG CHEN ; CHING-FUH LIN	Applied Physics Letters	23	20
431	2000	Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes	CHEE-WEE LIU ; MIIN-JANG CHEN ; Lin, I. C.; Lee, M. H.; CHING-FUH LIN	Applied Physics Letters	33	33
432	2000	Formation of silicon surface gratings with high-pulse-energy ultraviolet laser	Chen, C.-Y.; Ma, K.-J.; Lin, Y.-S.; Liu, C.-W.; Hsu, C.-W.; Chao, C.-Y.; Gurtler, S.; CHEE-WEE LIU ; CHIH-CHUNG YANG	Journal of Applied Physics	3	3
433	2000	Tunneling induced electroluminescence from metal-oxide-semiconductor structure on silicon	Lin, Ching-Fuh; Liu, Cheewee; Chen, Miin-Jang; Lee, Ming-Hung; Lin, I-Cheng; CHEE-WEE LIU	Proceedings of SPIE - The International Society for Optical Engineering
434	2000	Infrared electroluminescence from metal-oxide-semiconductor structures on silicon	Lin, Ching-Fuh ; Liu, C. W.; Chen, Miin-Jang ; Lee, M. H.; CHEE-WEE LIU	Journal of Physics: Condensed Matter	7	7
435	2000	Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates	CHEE-WEE LIU ; Lee, Min-Hung; Chang, Shu-Tong; MIIN-JANG CHEN ; CHING-FUH LIN	Japanese journal of applied physics	2	1
436	2000	Novel photodetector using MOS tunneling structures	Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; CHEE-WEE LIU	IEEE Electron Device Letters	70	62
437	2000	具網路結合功能之半導體製造集結式機台─子計畫二：用於12吋晶圓製造之前段製程技術(2/3)	劉致為
438	1999	Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition	Liu, C.W.; Tseng, Y.D.; Huang, Y.S.; CHEE-WEE LIU	Applied Physics Letters
439	1999	Modeling and optimization of wafer-level spatial uniformity with the use of rational subgrouping	Guo, Ruey-Shan; Chen, Argon; Liu, Cheewee; Lin, A.; Lan, M.; CHEE-WEE LIU	IEEE International Symposium on Semiconductor Manufacturing Conference
440	1999	具網路結合功能之半導體製造集結式機台─子計畫二：用於12吋晶圓製造之前段製程技術(1/3)	劉致為
441	1999	半導體關鍵設備研發(III)─子計畫二：0.35UM或更高技術之單晶圓化學氣相沉積反應器	劉致為
442	1999	Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition	Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; MING-YAU CHERN ; CHEE-WEE LIU	Journal of Applied Physics	13	15
443	1999	Silicon surface grating formation with high power UV laser	Chen, Cheng-Yen; Chao, Chung-Yen; Gurtler, Steffen; Liu, Chee-Wee; Yang, C.C.; CHEE-WEE LIU	Proceedings of SPIE - The International Society for Optical Engineering
444	1999	Light emission and detection by metal oxide silicon tunneling diodes	Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHEE-WEE LIU	International Electron Devices Meeting, IEDM
445	1998	半導體關鍵設備研發-子計畫二﹕ 0.35:m 或更高技術之單晶圓化學氣相沉積反應器( I )	劉致為
446	1998	以矽晶圓為基礎的長波長紅外線偵測器(新型SiGeC 材料之研究)	劉致為
447	1998	The design of rapid thermal process for large diameter applications [semiconductor wafer processing]	Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU ; CHIH-CHUNG YANG	Semiconductor Manufacturing Technology Workshop	0	0
448	1998	RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications	Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU	Materials Research Society Symposium
449	1998	Valence band properties of relaxed Ge<inf>1-x</inf>C<inf>x</inf> alloys	Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU	Materials Chemistry and Physics	2	3
450	1998	Laser ablated silicon gratings for temperature measurements	Chao, Chung-Yen; Chen, Cheng-Yen; Liu, Chee-Wee; Chang, Yih; Yang, C.C.; CHEE-WEE LIU	Conference on Lasers and Electro-Optics Europe
451	1998	Valence band properties of relaxed Ge1-xCx alloys	Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU	Materials Chemistry and Physics
452	1998	300 Mb/s BiCMOS EPR4 read channel for magnetic hard disks	Leung, M.; CHEE-WEE LIU et al.	IEEE International Solid-State Circuits Conference
453	1997	矽鍺異質電晶體之等效電路粹取與RTP製程模擬	劉致為
454	1997	Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys	Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters
455	1997	半導體關鍵設備研發─子計畫二：0.35um或更高技術之單晶圓化學氣相沉積反應器(I)	劉致為
456	1997	Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition	Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU	Materials Chemistry and Physics
457	1997	Direct writing of silicon gratings with highly coherent ultraviolet laser	Chao, C.-Y.; Chen, C.-Y.; CHEE-WEE LIU ; Chang, Y.; CHIH-CHUNG YANG	Applied Physics Letters	13	12
458	1997	Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition	Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU	Materials Research Society Symposium
459	1997	Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics	Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU	Journal of Applied Physics
460	1997	Hole effective masses in relaxed Si<inf>1-x</inf>C<inf>x</inf> and Si<inf>1-y</inf>Ge<inf>y</inf> alloys	Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU	Applied Physics Letters	12	14
461	1997	Direct writing of silicon gratings with highly coherent ultraviolet laser	Chao, C.-Y.; Chen, C.-Y.; Liu, C.-W.; Chang, Y.; Yang, C.C.; CHEE-WEE LIU	Applied Physics Letters
462	1997	Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition	Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU	Materials Chemistry and Physics	4	4
463	1996	Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates	Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU	Journal of Applied Physics
464	1996	Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition	Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU	Materials Research Society Symposium
465	1996	High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques	Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU	Annual Device Research Conference Digest
466	1996	Si/Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> /Si heterojunction bipolar transistors	Lanzerotti, L.D.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Watanabe, J.K.; Theodore, N.D.; CHEE-WEE LIU	IEEE Electron Device Letters	69	55
467	1995	Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915))	Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU	Applied Physics Letters	0
468	1995	Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915))	Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU	Applied Physics Letters
469	1995	Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)	St. Amour, A.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU	Applied Physics Letters	108	96
470	1995	Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition	Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU	Materials Research Society Symposium
471	1994	Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition	Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU	Materials Research Society Symposium
472	1994	Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition	Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU	Applied Physics Letters	27	25
473	1993	Alloy scattering limited transport of two-dimensional carriers in strained Si<inf>1-x</inf>Ge<inf>x</inf> quantum wells	Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU	Applied Physics Letters	31	29
474	1993	Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition	Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU	Materials Science and Engineering B	0	0
475	1993	Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition	Schwartz, P.V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU	Applied Physics Letters	3	5
476	1993	Symmetric Si/Si<inf>1-x</inf>Ge<inf>x</inf> electron resonant tunneling diodes with an anomalous temperature behavior	Matutinovi?-Krstelj, ?.; Liu, C.W.; Xiao, X.; Sturm, J.C.; CHEE-WEE LIU	Applied Physics Letters	18	0
477	1992	Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells	Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU	Applied Physics Letters	54	54
478	1992	Quantum confinement effects in strained silicon-germanium alloy quantum wells	Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU	Applied Physics Letters	65	69
479	1987	Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source	Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN	Applied Physics Letters	9	9
480	Jun	Coupling effects of dual SiGe power amplifiers for 802.11n MIMO applications	Hua, Wei-Chun; Lin, Po-Tsung; Lin, Chun-Ping; Lin, Che-Yung; Chang, Huan-Lin; Liu, Chee Wee ; Yang, Tzu-Yi; Ma, Gin-Kou	Radio Frequency Integrated Circuits (RFIC) Symposium, 2006	0	0
481	Dec	Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si	CHING-FUH LIN ; MIIN-JANG CHEN ; Liang, Eih-Zhe; Liu, W.T.; Chang, S.T.; CHEE-WEE LIU	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD	0	0

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