Results 1-1 of 1 (Search time: 0.01 seconds).
Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link | |
---|---|---|---|---|---|---|---|
1 | 2020 | High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer | Luo Y.J; Sanyal I; Tzeng W.-C; Ho Y.-L; Chang Y.-C; Hsu C.-C; Chyi J.-I; CHAO-HSIN WU | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 |