第 1 到 86 筆結果,共 86 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2024 | Recent progress in undoped group-IV heterostructures for quantum technologies | Tai, Chia Tse; JIUN-YUN LI | Materials for Quantum Technology | |||
2 | 2024 | A Hyperbolic Micromagnet for Multiple Spin Qubits with Fast Rabi Oscillations and High Addressability | Chang, Che Hao; Li, Yu Cheng; Wu, Yu Jui; Liao, Chen Yao; Lin, Min Jui; Tsao, Hung Yu; JIUN-YUN LI | IEEE Electron Device Letters | |||
3 | 2023 | High-quality GeSn thin-film resonant cavities for short-wave infrared applications | Wu, Jheng Ying; Wang, Yu Fu; Liu, Chia You; Kuo, Shin Chun; Chen, Tzu Hsuan; JIUN-YUN LI ; Huang, Chin Ya; CHIEN-HAO LIU ; Yang, Jung Yen; Chang, Chun Chieh; TZU-HSUAN CHANG | Journal of Vacuum Science and Technology B | 0 | 0 | |
4 | 2023 | A Thru-Reflect-Series-Resistance (TRS) Calibration for Cryogenic Device Characterization in 40-nm CMOS Technology | Chen, Yi Ting; Huang, Ian; Lin, Min Jui; Chuang, Shu Yan; Ho, Hua Ling; Hsu, Kai Syang; Lin, Pin Yu; Chen, Sih Ying; LIANG-HUNG LU; SHIH-YUAN CHEN; JIUN-YUN LI ; JUN-CHAU CHIEN | IEEE MTT-S International Microwave Symposium Digest | 0 | 0 | |
5 | 2023 | Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques | Hong, TC; Lu, WH; Wang, YH; JIUN-YUN LI ; Lee, YJ; Chao, TS | IEEE TRANSACTIONS ON ELECTRON DEVICES | 0 | 0 | |
6 | 2022 | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure | Wang, Xuejing; Lin, Yung Chen; Tai, Chia Tse; Lee, Seok Woo; Lu, Tzu Ming; Shin, Sun Hae Ra; Addamane, Sadhvikas J.; Sheehan, Chris; JIUN-YUN LI ; Kim, Yerim; Yoo, Jinkyoung | APL Materials | 0 | 0 | |
7 | 2022 | Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes | Liu, Chia You; Tien, Kai Ying; Chiu, Po Yuan; Wu, Yu Jui; Chuang, Yen; Kao, Hsiang Shun; JIUN-YUN LI | Advanced Materials | 1 | 0 | |
8 | 2022 | Effective out-of-plane g factor in strained-Ge/SiGe quantum dots | Miller, Andrew J.; Hardy, Will J.; Luhman, Dwight R.; Brickson, Mitchell; Baczewski, Andrew; Liu, Chia You; JIUN-YUN LI ; Lilly, Michael P.; Lu, Tzu Ming | Physical Review B | 1 | 1 | |
9 | 2022 | Cryogenic Si/SiGe Heterostructure Flash Memory Devices | Hou, Wei Chih; Hsu, Nai Wen; Wang, Tz Ming; Liu, Chia You; Kao, Hsiang Shun; MIIN-JANG CHEN ; JIUN-YUN LI | ACS Applied Electronic Materials | 0 | 0 | |
10 | 2022 | Si Metal-Oxide-Semiconductor and Si/SiGe Heterostructure Quantum Dots | Wu, Yu Jui; Chiang, Chih Ying; Tsao, Hung Yu; Li, Tsung Ying; Wang, Tz Ming; Lin, Min Jui; Liu, Chia You; Yeh, Ching Chen; Yang, Cheng Hsueh; CHI-TE LIANG ; JIUN-YUN LI | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 0 | 0 | |
11 | 2022 | Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure | Hsu N.-W; Hou W.-C; Chen Y.-Y; Wu Y.-J; Kao H.-S; Harris C.T; Lu T.-M; Li J.-Y.; JIUN-YUN LI | IEEE Transactions on Electron Devices | 2 | 1 | |
12 | 2022 | First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications | Chang S.-W.; Lu T.-H.; Yang C.-Y.; Yeh C.-J.; Huang M.-K; Meng C.-F.; Chen P.-J.; Chang T.-H.; Chang Y.-S.; Jhu J.-W.; Hong T.-C.; Ke C.-C.; Yu X.-R.; Lu W.-H.; Baig M.A.; Cho T.-C.; Sung P.-J.; Su C.-J.; Hsueh F.-K.; Chen B.-Y.; Hu H.-H.; Wu C.-T.; Lin K.-L.; Ma W.C.-Y.; Lu D.D.; Kao K.-H.; Lee Y.-J.; Lin C.-L.; Huang K.-P.; Chen K.-M.; Li Y.; Samukawa S.; Chao T.-S.; Huang G.-W.; Wu W.-F.; Lee W.-H.; JIUN-YUN LI ; Shieh J.-M.; Tarng J.-H.; Wang Y.-H.; Yeh W.-K. | IEEE Transactions on Electron Devices | 9 | 6 | |
13 | 2021 | Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation | Chuang Y; Liu C.-Y; Kao H.-S; Tien K.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | ACS Applied Electronic Materials | 10 | 8 | |
14 | 2021 | High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls | Hou W.-C; Shih P.-C; Wu B.B.-R; HAO-HSIUNG LIN ; JIUN-YUN LI | IEEE Transactions on Electron Devices | 2 | 1 | |
15 | 2021 | High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures | Liu C.-Y; Chuang Y; Tai C.-T; Kao H.-S; Tien K.-Y; Li J.-Y.; JIUN-YUN LI | LEOS Summer Topical Meeting | 1 | 0 | |
16 | 2021 | Electron-spin-resonance meanderlines for effective spin control in Si quantum dots for large-scale qubit applications | Chang Y.-C; Huang I; Chen C.-Y; Lin M.-J; SHIH-YUAN CHEN ; JIUN-YUN LI | Applied Physics Letters | 0 | 0 | |
17 | 2021 | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | Chuang Y; Liu C.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | IEEE Electron Device Letters | 13 | 11 | |
18 | 2021 | Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure | Chen D et al.; Cai S; Hsu N.-W; Huang S.-H; Chuang Y; Nielsen E; JIUN-YUN LI ; CHEE-WEE LIU ; Lu T.M; Laroche D. | Applied Physics Letters | 0 | 1 | |
19 | 2021 | Si Cryo-CMOS and quantum dots for quantum computing applications | Wu, Yu-Jui; Chiang, Chih-Ying; Tsao, Hung-Yu; Lin, Min-Jui; Hsieh, Pu-Jia; Yeh, Ching-Chen; Syong, Wei-Ren; Hsu, Kai-Syang; CHI-TE LIANG ; Chen, Jeng-Chung; JIUN-YUN LI | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 0 | 0 | |
20 | 2021 | First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications | Chang S.-W; Lu T.-H; Yang C.-Y; Yeh C.-J; Huang M.-K; Meng C.-F; Chen P.-J; Chang T.-H; Chang Y.-S; Jhu J.-W; Hong T.-Z; Ke C.-C; Yu X.-R; Lu W.-H; Baig M.A; Cho T.-C; Sung P.-J; Su C.-J; Hsueh F.-K; Chen B.-Y; Hu H.-H; Wu C.-T; Lin K.-L; Ma W.C.-Y; Lu D.-D; Kao K.-H; Lee Y.-J; Lin C.-L; Huang K.-P; Chen K.-M; Li Y; Samukawa S; Chao T.-S; Huang G.-W; Wu W.-F; Lee W.-H; JIUN-YUN LI ; Shieh J.-M; Tarng J.-H; Wang Y.-H; Yeh W.-K. | Technical Digest - International Electron Devices Meeting, IEDM | 3 | 0 | |
21 | 2021 | Strain Effects on Rashba Spin-Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures | Tai C.-T.; Chiu P.-Y.; Liu C.-Y.; Kao H.-S.; Harris C.T.; Lu T.-M.; Hsieh C.-T.; Chang S.-W.; JIUN-YUN LI | Advanced Materials | 14 | 11 | |
22 | 2021 | Multi-bit cryogenic flash memory on Si/SiGe and Ge/GeSi heterostructures | Hou W.-C.; Hsu N.-W.; Kao H.-S.; JIUN-YUN LI | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 2 | 0 | |
23 | 2020 | Post-growth modulation doping by ion implantation | Chiu P.-Y.; Lidsky D.; Chuang Y.; Su Y.-H.; JIUN-YUN LI ; Harris C.T.; Lu T.M.. | Applied Physics Letters | 1 | 1 | |
24 | 2020 | QATG: Automatic Test Generation for Quantum Circuits | Wu C.-H; Hsieh C.-Y; JIUN-YUN LI | Proceedings - International Test Conference | 1 | 0 | |
25 | 2020 | First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT) | Hong T.-Z.; Chang W.-H.; Agarwal A.; Huang Y.-T.; Yang C.-Y.; Chu T.-Y.; Chao H.-Y.; Chuang Y.; Chung S.-T.; Lin J.-H.; Luo S.-M.; Tsai C.-J.; Li M.-J.; Yu X.-R.; Lin N.-C.; Cho T.-C.; Sung P.-J.; Su C.-J.; Luo G.-L.; Hsueh F.-K.; Lin K.-L.; Ishii H.; Irisawa T.; Maeda T.; Wu C.-T.; Ma W.C.-Y.; Lu D.-D.; Kao K.-H.; Lee Y.-J.; Chen H.J.-H.; Lin C.-L.; Chuang R.W.; Huang K.-P.; Samukawa S.; Li Y.-M.; Tarng J.-H.; Chao T.-S.; Miura M.; Huang G.-W.; Wu W.-F.; JIUN-YUN LI ; Shieh J.-M.; Wang Y.-H.; Yeh W.-K. | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
26 | 2020 | Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure | Liu, X.; Lu, T.-M.; Harris, C.T.; Lu, F.-L.; Liu, C.-Y.; JIUN-YUN LI ; CHEE-WEE LIU ; Du, Rui-Rui | Physical Review B | 1 | 0 | |
27 | 2020 | 3D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers | Su, Chunjung; Huang, Minkun; Lee, K. S.; VITA PI-HO HU ; Huang, Y. F.; Zheng, B. C.; Yao, C. H.; Lin, Neichih; Kao, Kuo-Hsing Hsing; Hong, Tzu Chieh; Sung, Pojung; Wu, Chienting; Yu, Tungyuan; Lin, Kun–Lin; Tseng, Y. C.; Lin, C. L.; Lee, Yaojen; Chao, Tiensheng; JIUN-YUN LI ; Wu, Wenfa; Shieh, Jiaming; Wang, Yeong-Her; Yeh, Wenkuan | Technical Digest - International Electron Devices Meeting, IEDM | 5 | 0 | |
28 | 2019 | A High I<inf>ON</inf>/I<inf>OFF</inf> Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation | Liu, J.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
29 | 2019 | Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications | Sung, P.-J.; Chang, C.-Y.; Chen, L.-Y.; Kao, K.-H.; Su, C.-J.; Liao, T.-H.; Fang, C.-C.; Wang, C.-J.; Hong, T.-C.; Jao, C.-Y.; Hsu, H.-S.; Luo, S.-X.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Huang, Y.-M.; Hou, F.-J.; Luo, G.-L.; Huang, Y.-C.; Shen, Y.-L.; Ma, W.C.-Y.; Huang, K.-P.; Lin, K.-L.; Samukawa, S.; Li, Y.; Huang, G.-W.; Lee, Y.-J.; Li, J.-Y.; Wu, W.-F.; Shieh, J.-M.; Chao, T.-S.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
30 | 2019 | High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing | Liu, J.-Y.; Chiu, P.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
31 | 2019 | Single and double hole quantum dots in strained Ge/SiGe quantum wells | W. Hardy; C. Harris; Yi-Hsin Su; Yen Chuang; J. Moussa; L. N. Maurer; JIUN-YUN LI ; T. M. Lu; D. R. Luhman | Nanotechnology | 24 | 22 | |
32 | 2019 | Light-Induced Activation of Adaptive Junction for Efficient Solar-Driven Oxygen Evolution: In Situ Unraveling the Interfacial Metal–Silicon Junction | Tung, C.-W.; Kuo, T.-R.; Hsu, C.-S.; Chuang, Y.; Chen, H.-C.; Chang, C.-K.; Chien, C.-Y.; Lu, Y.-J.; Chan, T.-S.; Lee, J.-F.; Li, J.-Y.; JIUN-YUN LI ; HAO MING CHEN | Advanced Energy Materials | 30 | 32 | |
33 | 2019 | Fabrication of omega-gated negative capacitance finfets and SRAM | Sung, P.-J.; Su, C.-J.; Lu, D.D.; Luo, S.-X.; Kao, K.-H.; Ciou, J.-Y.; Jao, C.-Y.; Hsu, H.-S.; Wang, C.-J.; Hong, T.-C.; Liao, T.-H.; Fang, C.-C.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Ma, W.C.-Y.; Huang, K.-P.; Lee, Y.-J.; Chao, T.-S.; Li, J.-Y.; Wu, W.-F.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | 3 | 0 | |
34 | 2019 | Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits | Hardy, W.J.; Su, Y.-H.; Chuang, Y.; Maurer, L.N.; Brickson, M.; Baczewski, A.; JIUN-YUN LI ; Lu, T.-M.; Luhman, D.R. | ECS Transactions | 2 | 0 | |
35 | 2019 | First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications | Chang, S.-W.; Li, J.-H.; Huang, M.-K.; Huang, Y.-C.; Huang, S.-T.; Wang, H.-C.; Huang, Y.-J.; Wang, J.-Y.; Yu, L.-W.; Huang, Y.-F.; Hsueh, F.-K.; Sung, P.-J.; Wu, C.-T.; Ma, W.C.-Y.; Kao, K.-H.; Lee, Y.-J.; Lin, C.-L.; Chuang, R.W.; Huang, K.-P.; Samukawa, S.; Li, Y.; Lee, W.-H.; Chu, T.-Y.; Chao, T.-S.; Huang, G.-W.; Wu, W.-F.; JIUN-YUN LI ; Shieh, J.-M.; Yeh, W.-K.; Wang, Y.-H.; Lu, D.D.; Wang, C.-J.; Lin, N.-C.; Su, C.-J.; Lo, S.-H.; Huang, H.-F. | Technical Digest - International Electron Devices Meeting, IEDM | 41 | 0 | |
36 | 2019 | Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening | Su, Y.-H.; Chou, K.-Y.; Chuang, Y.; Lu, T.-M.; JIUN-YUN LI | Journal of Applied Physics | 9 | 10 | |
37 | 2018 | Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices | E. Bussmann; J. K. Gamble; J. C. Koepke; D. Laroche; S. H. Huang; Y. Chuang; Jiun-Yun Li; CHEE-WEE LIU ; B. S. Swartzentruber; M. P. Lilly; M. S. Carroll; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Physical Review Materials | 2 | 1 | |
38 | 2018 | High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing | Tzu-Hung Liu; Yen Chuang; Po-Yuan Chiu; Chia-You Liu; Cheng-Hong Shen; Guang-Li Lou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 19 | 15 | |
39 | 2018 | Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime | Chou C.-T.; Jacobson N.T.; Moussa J.E.; Baczewski A.D.; Chuang Yen; Liu C.-Y.; JIUN-YUN LI ; Lu T.M. | Nanoscale | 15 | 9 | |
40 | 2018 | Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime | Chung-Tao Chou; N. T. Jacobson; J. E. Moussa; A. D. Baczewski; Yen Chuang; Chia-You Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Nanoscale | |||
41 | 2018 | 客座總編輯-2025年,臺灣農業轉捩點 | 盧虎生 | 豐年雜誌 | 0 | 0 | |
42 | 2018 | Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure | Kuan-Yu Chou; Nai-Wen Hsu; Yi-Hsin Su; Chung-Tao Chou; Po-Yuan Chiu; Yen Chuang; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | Applied Physics Letters | 8 | 7 | |
43 | 2017 | A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current | Pao-Chuan Shih; Wei-Chih Hou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 31 | 30 | |
44 | 2017 | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Lee, Y.-J.; Hong, T.-C.; Hsueh, F.-K.; Sung, P.-J.; Chen, C.-Y.; Chuang, S.-S.; Cho, T.-C.; Noda, S.; Tsou, Y.-C.; Kao, K.-H.; Wu, C.-T.; Yu, T.-Y.; Jian, Y.-L.; Su, C.-J.; Huang, Y.-M.; Huang, W.-H.; Chen, B.-Y.; Chen, M.-C.; Huang, K.-P.; Li, J.-Y.; Chen, M.-J.; Li, Y.; Samukawa, S.; Wu, W.-F.; Huang, G.-W.; Shieh, J.-M.; Tseng, T.-Y.; Chao, T.-S.; Wang, Y.-H.; MIIN-JANG CHEN ; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
45 | 2017 | Effective g factor of low-density two-dimensional holes in a Ge quantum well | T. M. Lu; C. T. Harris; S. –H. Huang; Y. Chuang; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 15 | 11 | |
46 | 2017 | Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures | Yi-Hsin Su; Yen Chuang; Chia-You Liu; JIUN-YUN LI ; Lu, Tzu-Ming | Physical Review Materials | 23 | 17 | |
47 | 2017 | Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system | T. M. Lu; L. A. Tracy; D. Laroche; S. –H. Huang; Y. Chuang; Y. –H Su; JIUN-YUN LI ; CHEE-WEE LIU | Scientific Reports | 9 | 7 | |
48 | 2017 | A Robust Vision-Based Skyline Detection Algorithm Under Different Weather Conditions. | Liu, Yun-Jiun; Chiu, Chung-Cheng; Yang, Jia-Horng; JIUN-YUN LI | IEEE Access | 5 | 3 | |
49 | 2017 | A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade | Shih, P.-C.; Huang, H.-C.; Wang, C.-A.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
50 | 2017 | GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant | Chuang, Y.; Huang, H.-C.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
51 | 2016 | Widely tunable monolithic mid-infrared quantum cascade lasers using super-structure grating reflectors | Dingkai Guo; JIUN-YUN LI ; Liwei Cheng; Xing Chen; Terry Worchesky; Fow-Sen Choa | Photonics | 3 | 0 | |
52 | 2016 | High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential | Lu, T.M.; Laroche, D.; Huang, S.-H.; Chuang, Y.; CHEE-WEE LIU ; JIUN-YUN LI | Scientific Reports | 2 | 2 | |
53 | 2016 | Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure | D. Laroche; S. –H. Huang; Y. Chuang; C. W. Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 20 | 18 | |
54 | 2016 | Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology | JIUN-YUN LI | International Electron Devices Meeting, IEDM | |||
55 | 2015 | Scattering mechanism in shallow undoped Si/SiGe quantum wells | D. Laroche; S. –H. Huang; E. Nielsen; Y. Chuang; Jiun-Yun Li; C. W. Liu; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU | AIP Advances | 24 | 21 | |
56 | 2015 | Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure | Laroche, D.; Huang, S.-H.; Nielsen, E.; CHEE-WEE LIU ; JIUN-YUN LI ; Lu, T.M. | Applied Physics Letters | 7 | 4 | |
57 | 2015 | Enhancement of spin susceptibility of low-density two-dimensional electrons in a high quality Si/SiGe quantum well | JIUN-YUN LI | ||||
58 | 2014 | Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer | C. T. Huang; JIUN-YUN LI ; K. S. Chou; J. C. Sturm | Applied Physics Letters | 10 | 9 | |
59 | 2014 | Integrated widely tunable quantum cascade lasers with super-structure gratings | Guo, D.; Chen, X.; Li, J.-Y.; Cheng, L.; Worchesky, T.; Choa, F.-S.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
60 | 2013 | Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 18 | 18 | |
61 | 2013 | Implant isolation of silicon two-dimensional electron gases at 4.2 K | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Electron Device Letters | 1 | 2 | |
62 | 2013 | The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Transactions on Electron Devices | 7 | 7 | |
63 | 2013 | Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
64 | 2012 | Mincernet: A global research alliance to support the fight against heat stress in rice | Yoshimoto, M.; Fukuoka, M.; Hasegawa, T.; Matsui, T.; Tian, X.; Vijayalakshmi, C.; Singh, M.P.; Myint, T.T.; Weerakoon, W.; Lafarge, T.; Lur, H.S. ; Tarpley, L. | Journal of Agricultural Meteorology | 12 | 0 | |
65 | 2012 | Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating | Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
66 | 2012 | The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 5 | 6 | |
67 | 2012 | Heat dissipation consideration of high-power mid-infrared quantum cascade laser arrays | Chen, X.; Cheng, L.; Guo, D.; Li, J.-Y.; Choa, F.-S.; JIUN-YUN LI | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 | |||
68 | 2012 | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
69 | 2012 | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
70 | 2012 | Surface emitting quantum cascade laser arrays | JIUN-YUN LI | Frontiers in Optics, FIO 2012 | |||
71 | 2011 | Authentication of domestic Taiwan rice varieties based on fingerprinting analysis of microsatellite DNA markers | Chuang, H.-Y.; Lur, H.-S. ; Hwu, K.-K.; Chang, M.-C. | Botanical Studies | 29 | 23 | |
72 | 2010 | Quasi-continuous-wave operations of quantum cascade lasers | Chen, X.; Cheng, L.; Guo, D.; Choa, F.-S.; Worchesky, T.; Li, J.-Y.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 2 | 0 | |
73 | 2010 | Low-threshold current short-cavity quantum cascade lasers | Chen, X.; Cheng, L.; Guo, D.; Choa, F.-S.; Worchesky, T.; Li, J.-Y.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 2 | 0 | |
74 | 2009 | Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | Device Research Conference | 5 | 0 | |
75 | 2005 | Proteomic analysis of the expression of proteins related to rice quality during caryopsis development and the effect of high temperature on expression | Lin, S.-K.; Chang, M.-C.; Tsai, Y.-G.; Lur, H.-S. | Proteomics | 136 | 121 | |
76 | 2005 | Polarization Splitter With Variable TE–TM Mode Converter Using Zn and Ni Codiffused LiNbO3 Waveguides | Hsu, Wen-Hao; Lin, Ko-Chun; Li, Jiun-Yun ; Wu, Yir-Shyuan; Wang, Way-Seen | IEEE Journal of Selected Topics in Quantum Electronics | |||
77 | 2005 | Polarization splitter with variable TE-TM mode converter using Zn and Ni codiffused LiNbO<inf>3</inf> waveguides | Hsu, W.-H.; Lin, K.-C.; Li, J.-Y.; Wu, Y.-S.; Wang, W.-S.; JIUN-YUN LI | IEEE Journal on Selected Topics in Quantum Electronics | 19 | 13 | |
78 | 2004 | Microwave FMR studies on ultrathin Fe/GaAs layer structures | Tsai, C.S.; Li, J.Y.; Chen, M.J.; Yu, C.C.; Liou, Y.; Hung, D.S.; Yao, Y.D.; JIUN-YUN LI ; MIIN-JANG CHEN | Journal of Magnetism and Magnetic Materials | 3 | 3 | |
79 | 2004 | Stimulated emission in a nano-structured silicon pn junction diode using current injection | JIUN-YUN LI | Applied Physics Letters | |||
80 | 2002 | Conjugated and free polyamine levels in normal and aborting maize kernels | Liang, Y.-L.; Lur, H.-S. | Crop Science | 40 | 33 | |
81 | 2001 | A TE-TM mode splitter using annealed proton exchange and zinc/nickel co-diffusion waveguides | Li, Jiun-Yun ; Hsu, Wen-Hao; Wang, Way-Seen | The 4th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2001 | 0 | 0 | |
82 | 2001 | A TE-TM mode splitter using annealed proton exchange and zinc/nickel co-diffusion waveguides | Li, J.-Y.; Hsu, W.-H.; Wang, W.-S.; JIUN-YUN LI | Pacific Rim Conference on Lasers and Electro-Optics, CLEO | |||
83 | 2000 | 新知文摘 | 徐崇仁; 韓玉山; 曾萬年; 周照仁; 陳能敏; 林順福; 盧虎生 ; 蘇裕昌 | 國際農業科技新知 | 0 | 0 | |
84 | 1996 | Physiological responses of different chilling-tolerant Sorghum (Sorghum bicolor L.) lines to low temperature | Kao, Hsiao-Ling; HUU-SHENG LUR ; Chu, Chun | Journal of the Agricultural Association of China | |||
85 | 1995 | Abscisic-Acid and Putrescine Accumulation in Chilling-Tolerant Rice Cultivars | Lee, Tm; HUU-SHENG LUR ; Chu, C. | 40 | |||
86 | 1995 | Sucrose-Starvation-Induced Changes in Polyamine and Abscisic-Acid Levels | Sung, Hi; Liu, Lf; HUU-SHENG LUR ; Kao, Ch |