第 1 到 5 筆結果,共 5 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2018 | Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices | E. Bussmann; J. K. Gamble; J. C. Koepke; D. Laroche; S. H. Huang; Y. Chuang; Jiun-Yun Li; CHEE-WEE LIU ; B. S. Swartzentruber; M. P. Lilly; M. S. Carroll; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Physical Review Materials | 2 | 1 | |
2 | 2018 | High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing | Tzu-Hung Liu; Yen Chuang; Po-Yuan Chiu; Chia-You Liu; Cheng-Hong Shen; Guang-Li Lou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 19 | 15 | |
3 | 2018 | Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime | Chung-Tao Chou; N. T. Jacobson; J. E. Moussa; A. D. Baczewski; Yen Chuang; Chia-You Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Nanoscale | |||
4 | 2018 | Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure | Kuan-Yu Chou; Nai-Wen Hsu; Yi-Hsin Su; Chung-Tao Chou; Po-Yuan Chiu; Yen Chuang; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | Applied Physics Letters | 8 | 7 | |
5 | 2017 | A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current | Pao-Chuan Shih; Wei-Chih Hou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 31 | 30 |