第 1 到 22 筆結果,共 22 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
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1 | 2019 | A High I<inf>ON</inf>/I<inf>OFF</inf> Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation | Liu, J.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
2 | 2019 | Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications | Sung, P.-J.; Chang, C.-Y.; Chen, L.-Y.; Kao, K.-H.; Su, C.-J.; Liao, T.-H.; Fang, C.-C.; Wang, C.-J.; Hong, T.-C.; Jao, C.-Y.; Hsu, H.-S.; Luo, S.-X.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Huang, Y.-M.; Hou, F.-J.; Luo, G.-L.; Huang, Y.-C.; Shen, Y.-L.; Ma, W.C.-Y.; Huang, K.-P.; Lin, K.-L.; Samukawa, S.; Li, Y.; Huang, G.-W.; Lee, Y.-J.; Li, J.-Y.; Wu, W.-F.; Shieh, J.-M.; Chao, T.-S.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
3 | 2019 | High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing | Liu, J.-Y.; Chiu, P.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
4 | 2019 | Light-Induced Activation of Adaptive Junction for Efficient Solar-Driven Oxygen Evolution: In Situ Unraveling the Interfacial Metal–Silicon Junction | Tung, C.-W.; Kuo, T.-R.; Hsu, C.-S.; Chuang, Y.; Chen, H.-C.; Chang, C.-K.; Chien, C.-Y.; Lu, Y.-J.; Chan, T.-S.; Lee, J.-F.; Li, J.-Y.; JIUN-YUN LI ; HAO MING CHEN | Advanced Energy Materials | 30 | 32 | |
5 | 2019 | Fabrication of omega-gated negative capacitance finfets and SRAM | Sung, P.-J.; Su, C.-J.; Lu, D.D.; Luo, S.-X.; Kao, K.-H.; Ciou, J.-Y.; Jao, C.-Y.; Hsu, H.-S.; Wang, C.-J.; Hong, T.-C.; Liao, T.-H.; Fang, C.-C.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Ma, W.C.-Y.; Huang, K.-P.; Lee, Y.-J.; Chao, T.-S.; Li, J.-Y.; Wu, W.-F.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | 3 | 0 | |
6 | 2017 | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Lee, Y.-J.; Hong, T.-C.; Hsueh, F.-K.; Sung, P.-J.; Chen, C.-Y.; Chuang, S.-S.; Cho, T.-C.; Noda, S.; Tsou, Y.-C.; Kao, K.-H.; Wu, C.-T.; Yu, T.-Y.; Jian, Y.-L.; Su, C.-J.; Huang, Y.-M.; Huang, W.-H.; Chen, B.-Y.; Chen, M.-C.; Huang, K.-P.; Li, J.-Y.; Chen, M.-J.; Li, Y.; Samukawa, S.; Wu, W.-F.; Huang, G.-W.; Shieh, J.-M.; Tseng, T.-Y.; Chao, T.-S.; Wang, Y.-H.; MIIN-JANG CHEN ; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
7 | 2017 | A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade | Shih, P.-C.; Huang, H.-C.; Wang, C.-A.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
8 | 2017 | GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant | Chuang, Y.; Huang, H.-C.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
9 | 2014 | Integrated widely tunable quantum cascade lasers with super-structure gratings | Guo, D.; Chen, X.; Li, J.-Y.; Cheng, L.; Worchesky, T.; Choa, F.-S.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
10 | 2013 | Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 18 | 18 | |
11 | 2013 | Implant isolation of silicon two-dimensional electron gases at 4.2 K | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Electron Device Letters | 1 | 2 | |
12 | 2013 | The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Transactions on Electron Devices | 7 | 7 | |
13 | 2013 | Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
14 | 2012 | The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 5 | 6 | |
15 | 2012 | Heat dissipation consideration of high-power mid-infrared quantum cascade laser arrays | Chen, X.; Cheng, L.; Guo, D.; Li, J.-Y.; Choa, F.-S.; JIUN-YUN LI | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 | |||
16 | 2012 | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
17 | 2012 | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
18 | 2010 | Quasi-continuous-wave operations of quantum cascade lasers | Chen, X.; Cheng, L.; Guo, D.; Choa, F.-S.; Worchesky, T.; Li, J.-Y.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 2 | 0 | |
19 | 2010 | Low-threshold current short-cavity quantum cascade lasers | Chen, X.; Cheng, L.; Guo, D.; Choa, F.-S.; Worchesky, T.; Li, J.-Y.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 2 | 0 | |
20 | 2009 | Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | Device Research Conference | 5 | 0 | |
21 | 2005 | Polarization splitter with variable TE-TM mode converter using Zn and Ni codiffused LiNbO<inf>3</inf> waveguides | Hsu, W.-H.; Lin, K.-C.; Li, J.-Y.; Wu, Y.-S.; Wang, W.-S.; JIUN-YUN LI | IEEE Journal on Selected Topics in Quantum Electronics | 19 | 13 | |
22 | 2001 | A TE-TM mode splitter using annealed proton exchange and zinc/nickel co-diffusion waveguides | Li, J.-Y.; Hsu, W.-H.; Wang, W.-S.; JIUN-YUN LI | Pacific Rim Conference on Lasers and Electro-Optics, CLEO |