第 1 到 4 筆結果,共 4 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2022 | Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure | Hsu N.-W; Hou W.-C; Chen Y.-Y; Wu Y.-J; Kao H.-S; Harris C.T; Lu T.-M; Li J.-Y.; JIUN-YUN LI | IEEE Transactions on Electron Devices | 2 | 1 | |
2 | 2021 | Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation | Chuang Y; Liu C.-Y; Kao H.-S; Tien K.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | ACS Applied Electronic Materials | 10 | 8 | |
3 | 2021 | High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures | Liu C.-Y; Chuang Y; Tai C.-T; Kao H.-S; Tien K.-Y; Li J.-Y.; JIUN-YUN LI | LEOS Summer Topical Meeting | 1 | 0 | |
4 | 2021 | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | Chuang Y; Liu C.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | IEEE Electron Device Letters | 13 | 11 |