第 1 到 32 筆結果,共 32 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
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1 | 2019 | Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications | Sung, P.-J.; Chang, C.-Y.; Chen, L.-Y.; Kao, K.-H.; Su, C.-J.; Liao, T.-H.; Fang, C.-C.; Wang, C.-J.; Hong, T.-C.; Jao, C.-Y.; Hsu, H.-S.; Luo, S.-X.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Huang, Y.-M.; Hou, F.-J.; Luo, G.-L.; Huang, Y.-C.; Shen, Y.-L.; Ma, W.C.-Y.; Huang, K.-P.; Lin, K.-L.; Samukawa, S.; Li, Y.; Huang, G.-W.; Lee, Y.-J.; Li, J.-Y.; Wu, W.-F.; Shieh, J.-M.; Chao, T.-S.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
2 | 2013 | Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
3 | 2023 | A Thru-Reflect-Series-Resistance (TRS) Calibration for Cryogenic Device Characterization in 40-nm CMOS Technology | Chen, Yi Ting; Huang, Ian; Lin, Min Jui; Chuang, Shu Yan; Ho, Hua Ling; Hsu, Kai Syang; Lin, Pin Yu; Chen, Sih Ying; LIANG-HUNG LU; SHIH-YUAN CHEN; JIUN-YUN LI ; JUN-CHAU CHIEN | IEEE MTT-S International Microwave Symposium Digest | 0 | 0 | |
4 | 2012 | Surface emitting quantum cascade laser arrays | JIUN-YUN LI | Frontiers in Optics, FIO 2012 | |||
5 | 2022 | Si Metal-Oxide-Semiconductor and Si/SiGe Heterostructure Quantum Dots | Wu, Yu Jui; Chiang, Chih Ying; Tsao, Hung Yu; Li, Tsung Ying; Wang, Tz Ming; Lin, Min Jui; Liu, Chia You; Yeh, Ching Chen; Yang, Cheng Hsueh; CHI-TE LIANG ; JIUN-YUN LI | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 0 | 0 | |
6 | 2021 | Si Cryo-CMOS and quantum dots for quantum computing applications | Wu, Yu-Jui; Chiang, Chih-Ying; Tsao, Hung-Yu; Lin, Min-Jui; Hsieh, Pu-Jia; Yeh, Ching-Chen; Syong, Wei-Ren; Hsu, Kai-Syang; CHI-TE LIANG ; Chen, Jeng-Chung; JIUN-YUN LI | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 0 | 0 | |
7 | 2010 | Quasi-continuous-wave operations of quantum cascade lasers | Chen, X.; Cheng, L.; Guo, D.; Choa, F.-S.; Worchesky, T.; Li, J.-Y.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 2 | 0 | |
8 | 2020 | QATG: Automatic Test Generation for Quantum Circuits | Wu C.-H; Hsieh C.-Y; JIUN-YUN LI | Proceedings - International Test Conference | 1 | 0 | |
9 | 2017 | A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade | Shih, P.-C.; Huang, H.-C.; Wang, C.-A.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
10 | 2021 | Multi-bit cryogenic flash memory on Si/SiGe and Ge/GeSi heterostructures | Hou W.-C.; Hsu N.-W.; Kao H.-S.; JIUN-YUN LI | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 2 | 0 | |
11 | 2004 | Microwave FMR studies on ultrathin Fe/GaAs layer structures | Tsai, C.S.; Li, J.Y.; Chen, M.J.; Yu, C.C.; Liou, Y.; Hung, D.S.; Yao, Y.D.; JIUN-YUN LI ; MIIN-JANG CHEN | Journal of Magnetism and Magnetic Materials | 3 | 3 | |
12 | 2010 | Low-threshold current short-cavity quantum cascade lasers | Chen, X.; Cheng, L.; Guo, D.; Choa, F.-S.; Worchesky, T.; Li, J.-Y.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 2 | 0 | |
13 | 2014 | Integrated widely tunable quantum cascade lasers with super-structure gratings | Guo, D.; Chen, X.; Li, J.-Y.; Cheng, L.; Worchesky, T.; Choa, F.-S.; JIUN-YUN LI | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
14 | 2021 | High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures | Liu C.-Y; Chuang Y; Tai C.-T; Kao H.-S; Tien K.-Y; Li J.-Y.; JIUN-YUN LI | LEOS Summer Topical Meeting | 1 | 0 | |
15 | 2017 | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Lee, Y.-J.; Hong, T.-C.; Hsueh, F.-K.; Sung, P.-J.; Chen, C.-Y.; Chuang, S.-S.; Cho, T.-C.; Noda, S.; Tsou, Y.-C.; Kao, K.-H.; Wu, C.-T.; Yu, T.-Y.; Jian, Y.-L.; Su, C.-J.; Huang, Y.-M.; Huang, W.-H.; Chen, B.-Y.; Chen, M.-C.; Huang, K.-P.; Li, J.-Y.; Chen, M.-J.; Li, Y.; Samukawa, S.; Wu, W.-F.; Huang, G.-W.; Shieh, J.-M.; Tseng, T.-Y.; Chao, T.-S.; Wang, Y.-H.; MIIN-JANG CHEN ; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
16 | 2019 | A High I<inf>ON</inf>/I<inf>OFF</inf> Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation | Liu, J.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
17 | 2019 | High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing | Liu, J.-Y.; Chiu, P.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
18 | 2012 | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
19 | 2012 | Heat dissipation consideration of high-power mid-infrared quantum cascade laser arrays | Chen, X.; Cheng, L.; Guo, D.; Li, J.-Y.; Choa, F.-S.; JIUN-YUN LI | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 | |||
20 | 2017 | GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant | Chuang, Y.; Huang, H.-C.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
21 | 2019 | Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits | Hardy, W.J.; Su, Y.-H.; Chuang, Y.; Maurer, L.N.; Brickson, M.; Baczewski, A.; JIUN-YUN LI ; Lu, T.-M.; Luhman, D.R. | ECS Transactions | 2 | 0 | |
22 | 2020 | First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT) | Hong T.-Z.; Chang W.-H.; Agarwal A.; Huang Y.-T.; Yang C.-Y.; Chu T.-Y.; Chao H.-Y.; Chuang Y.; Chung S.-T.; Lin J.-H.; Luo S.-M.; Tsai C.-J.; Li M.-J.; Yu X.-R.; Lin N.-C.; Cho T.-C.; Sung P.-J.; Su C.-J.; Luo G.-L.; Hsueh F.-K.; Lin K.-L.; Ishii H.; Irisawa T.; Maeda T.; Wu C.-T.; Ma W.C.-Y.; Lu D.-D.; Kao K.-H.; Lee Y.-J.; Chen H.J.-H.; Lin C.-L.; Chuang R.W.; Huang K.-P.; Samukawa S.; Li Y.-M.; Tarng J.-H.; Chao T.-S.; Miura M.; Huang G.-W.; Wu W.-F.; JIUN-YUN LI ; Shieh J.-M.; Wang Y.-H.; Yeh W.-K. | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
23 | 2021 | First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications | Chang S.-W; Lu T.-H; Yang C.-Y; Yeh C.-J; Huang M.-K; Meng C.-F; Chen P.-J; Chang T.-H; Chang Y.-S; Jhu J.-W; Hong T.-Z; Ke C.-C; Yu X.-R; Lu W.-H; Baig M.A; Cho T.-C; Sung P.-J; Su C.-J; Hsueh F.-K; Chen B.-Y; Hu H.-H; Wu C.-T; Lin K.-L; Ma W.C.-Y; Lu D.-D; Kao K.-H; Lee Y.-J; Lin C.-L; Huang K.-P; Chen K.-M; Li Y; Samukawa S; Chao T.-S; Huang G.-W; Wu W.-F; Lee W.-H; JIUN-YUN LI ; Shieh J.-M; Tarng J.-H; Wang Y.-H; Yeh W.-K. | Technical Digest - International Electron Devices Meeting, IEDM | 3 | 0 | |
24 | 2019 | First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications | Chang, S.-W.; Li, J.-H.; Huang, M.-K.; Huang, Y.-C.; Huang, S.-T.; Wang, H.-C.; Huang, Y.-J.; Wang, J.-Y.; Yu, L.-W.; Huang, Y.-F.; Hsueh, F.-K.; Sung, P.-J.; Wu, C.-T.; Ma, W.C.-Y.; Kao, K.-H.; Lee, Y.-J.; Lin, C.-L.; Chuang, R.W.; Huang, K.-P.; Samukawa, S.; Li, Y.; Lee, W.-H.; Chu, T.-Y.; Chao, T.-S.; Huang, G.-W.; Wu, W.-F.; JIUN-YUN LI ; Shieh, J.-M.; Yeh, W.-K.; Wang, Y.-H.; Lu, D.D.; Wang, C.-J.; Lin, N.-C.; Su, C.-J.; Lo, S.-H.; Huang, H.-F. | Technical Digest - International Electron Devices Meeting, IEDM | 41 | 0 | |
25 | 2019 | Fabrication of omega-gated negative capacitance finfets and SRAM | Sung, P.-J.; Su, C.-J.; Lu, D.D.; Luo, S.-X.; Kao, K.-H.; Ciou, J.-Y.; Jao, C.-Y.; Hsu, H.-S.; Wang, C.-J.; Hong, T.-C.; Liao, T.-H.; Fang, C.-C.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Ma, W.C.-Y.; Huang, K.-P.; Lee, Y.-J.; Chao, T.-S.; Li, J.-Y.; Wu, W.-F.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | 3 | 0 | |
26 | 2012 | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
27 | 2012 | Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating | Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
28 | 2015 | Enhancement of spin susceptibility of low-density two-dimensional electrons in a high quality Si/SiGe quantum well | JIUN-YUN LI | ||||
29 | 2016 | Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology | JIUN-YUN LI | International Electron Devices Meeting, IEDM | |||
30 | 2009 | Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | Device Research Conference | 5 | 0 | |
31 | 2001 | A TE-TM mode splitter using annealed proton exchange and zinc/nickel co-diffusion waveguides | Li, J.-Y.; Hsu, W.-H.; Wang, W.-S.; JIUN-YUN LI | Pacific Rim Conference on Lasers and Electro-Optics, CLEO | |||
32 | 2020 | 3D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers | Su, Chunjung; Huang, Minkun; Lee, K. S.; VITA PI-HO HU ; Huang, Y. F.; Zheng, B. C.; Yao, C. H.; Lin, Neichih; Kao, Kuo-Hsing Hsing; Hong, Tzu Chieh; Sung, Pojung; Wu, Chienting; Yu, Tungyuan; Lin, Kun–Lin; Tseng, Y. C.; Lin, C. L.; Lee, Yaojen; Chao, Tiensheng; JIUN-YUN LI ; Wu, Wenfa; Shieh, Jiaming; Wang, Yeong-Her; Yeh, Wenkuan | Technical Digest - International Electron Devices Meeting, IEDM | 5 | 0 |