第 1 到 10 筆結果,共 10 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2022 | Study on the effect of size on InGaN red micro-LEDs | Horng R.-H; Ye C.-X; Chen P.-W; Iida D; Ohkawa K; Wu Y.-R; Wuu D.-S.; YUH-RENN WU | Scientific Reports | 32 | 28 | |
2 | 2021 | Wearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive Layer | Wu W.-Y; Hsu Y.-H; Chen Y.-F; Wu Y.-R; Liu H.-W; Tu T.-Y; Chao P.P.-C; Tan C.-S; Horng R.-H.; YUH-RENN WU | ACS Applied Electronic Materials | 6 | 6 | |
3 | 2021 | Graphene/SnS2van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365-2240 nm Detection | Zhao Y; Tsai T.-Y; Wu G; ? Coile?in C; Zhao Y.-F; Zhang D; Hung K.-M; Chang C.-R; Wu Y.-R; Wu H.-C.; YUH-RENN WU | ACS Applied Materials and Interfaces | 17 | 17 | |
4 | 2021 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Frontiers in Optics and Photonics | 1 | 0 | |
5 | 2021 | Modeling dislocation-related reverse bias leakage in GaN p-n diodes | Qwah K.S; Robertson C.A; Wu Y.-R; Speck J.S.; YUH-RENN WU | Semiconductor Science and Technology | 3 | 2 | |
6 | 2021 | Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes with Cu/Invar/Cu Metal Substrates | Sinha S; Tarntair F.-G; Ho C.-H; Wu Y.-R; Horng R.-H.; YUH-RENN WU | IEEE Transactions on Electron Devices | 7 | 7 | |
7 | 2021 | Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse | Yang J.-X; Lin D.-J; Wu Y.-R; YUH-RENN WU ; JIAN-JANG HUANG | IEEE Journal of the Electron Devices Society | 3 | 3 | |
8 | 2020 | Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solver | Huang J.-Y; Lee J.-H; Wu Y.-R; Chen T.-Y; Chiu Y.-C; Huang J.-J; Leung M.-K; MAN-KIT LEUNG ; JIUN-HAW LEE ; YUH-RENN WU | Physical Review Materials | 4 | 3 | |
9 | 2020 | AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier | Wang T.-Y; Lai W.-C; Sie S.-Y; Chang S.-P; Wu Y.-R; Chiou Y.-Z; Kuo C.-H; Sheu J.-K.; YUH-RENN WU | Applied Physics Letters | 14 | 15 | |
10 | 2020 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Nanophotonics | 20 | 18 |