Research Project:
新穎半導體材料之研製與物理特性探討(3/3)

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摘要:科技的進展是來自於對材料性質的理解,以及設計與掌控人工合成材料的特性,在二十世紀中,半導導體材料扮演著主導性的角色,如今隨著技術的進步,材料尺度可以縮小到奈米等級,以及各式各樣的排列組合,正展現出繁富的新奇特性,我們預期半導體挾其既往成熟的理解,更能夠讓科學家調控其特性。 在本計劃中我們將從設計、研製到分析多種半導體材料,以期能獲得新穎的半導體材料,新穎的物理特性,以及可能新穎的應用。我們將著重於下列研究主題:(1)研究氮化物材料,包含InN,InGaAsN,InAlGaN等之薄膜,量子井,量子線,以量子點。(2)type II異質能帶結構之量子井,量子線,包含Si/Ge,GaAsSb/AlGaAs,CdSe/ZnTe等半導體系統。(3)利用微結構之排列組合,調控半導體光電特性,包含利用電子束蝕刻,奈米球微影術等。(4)研製半導體與有機材料異質結構,並探討其特性。(5)建立並執行特殊情況下之量測技術,探討其新奇現象,包含低溫高磁場量測,以及改進近場光學,與靜電力顯微術等之實驗系統。 <br> Abstract: Many breakthroughs in our science and technology have resulted from the understanding of the physical properties of materials, as well as to design and control the properties of artificial materials. In the last century, advances in semiconductor physics played a very important role. Recently, with advanced technologies, materials can be tailored to nanometer scale and formed into periodic arrays. Today, we do see a collection of wholly artificial materials with a tremendous range of properties. It is expected that with our more mature understanding of semiconductors than other materials, we should be able to control, manipulate, and obtain new physical properties from semiconductors more easily. This proposal is aimed at investigations of the following topics: (1)nitride semiconductors including epifilms, quantum well, quantum wires, and quantum dots of InN, InGaAsN, and InAlGaN. (2)Quantum wells and quantum dots of type II heterostructure band alignment, including Si/Ge, GaSb/AlGaAs, CdSe/ZnTe. (3)Using periodic arrangements of submicro-structures to control the properties of semiconductors. The possible techniques include e-beam lithography and nanosphere lithography. (4)Fabrication and investigation of semiconductor and organic polymer heterostructures. (5)Establishment and performance of experimental systems for the measurements under extreme conditions, including low temperature, high magnetic field, near-field optics for nanoparticles, and electrostatic force microscope.

Keywords

半導體
奈米科技
光電特性。
semiconductors
nanoscience and technology
optoelectronics.