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.National Taiwan University / 國立臺灣大學
Project / 研究計畫
新穎窄能隙半導體材料與光電元件之研究
新穎窄能隙半導體材料與光電元件之研究
Details
Primary Data
Project title
新穎窄能隙半導體材料與光電元件之研究
Internal ID
99-2221-E-002-105-MY3
Principal Investigator
HAO-HSIUNG LIN
Start Date
August 1, 2012
End Date
July 31, 2013
Partner Organizations
National Science and Technology Council
Description
Keywords
砷銻磷化銦
砷銻化鎵
砷銻化鋁
第一型量
子井
中紅外線光電元件
分子束磊
晶
電漿子加強型波導
InAsPSb
GaAsSb
AlAsSb
type-I quantum well
MIR optoelectronic devices
MBE
plasmon-enhanced waveguide