半間距10奈米及以下製程世代水平與垂直全繞閘極式CMOS元件之奈米微影成像度增進及非理想幾何元件建模技術

Project title

半間距10奈米及以下製程世代水平與垂直全繞閘極式CMOS元件之奈米微影成像度增進及非理想幾何元件建模技術

Internal ID

106-2628-E-002-017-MY3

Principal Investigator

Start Date

August 1, 2018

End Date

July 31, 2019

Partner Organizations

National Science and Technology Council