Broadband and Tunable Semiconductor Laser in Optical Communication Band
Date Issued
2004
Date
2004
Author(s)
Huang, Chi-Chia
DOI
en-US
Abstract
In this work, efforts were made for the experiment on broadband semiconductor laser. In Chapter 2, we demonstrate simultaneous dual-wavelength oscillation with single semiconductor gain medium. The wavelength separation is larger than 203 nm, and the signal to noise ratio is larger than 23 dB. The gain medium we used is a semiconductor optical amplifier (SOA) with nonidentical multiple quantum-well structure. SOA with straight waveguide is used for the purpose of low operation current and low loss. The optical path in the laser system has also to be carefully engineered to minimize the loss in the external cavity.
A phenomenon opposite to mode competition is observed in our broadband dual-wavelength laser, and is discussed in Chapter 3 and 4. This phenomenon is called mode anti-competition, and many works are done to see if this phenomenon arose from the measurement error. The characteristics and influential factors of mode anti-competition will be investigated.
In Chapter 5, we will demonstrate simultaneous eight-wavelength oscillation from one single semiconductor laser. The engineering of the optical path in the external cavity and the fabrication of the low loss multi-channel filter will be discussed.
Subjects
寬頻
反競爭
競爭
半導體雷射
分波多工
量子井
調變
雙波長
competition
anti-competition
optical communication
all-optical swicth
CWDM
broadband
semiconductor laser
quantum well
dual-wavelength laser
WDM
Type
thesis
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