Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
Resource
ACS Applied Materials & Interfaces, 4(7), 3471-3475
Journal
ACS Applied Materials & Interfaces
Pages
3471-3475
Date Issued
2012
Date
2012
Author(s)
Abstract
Nitrogen-doped ZnO (ZnO:N) films were prepared by remote plasma in situ atomic layer doping. X-ray photoelectron and absorption near-edge spectroscopies reveal the presence of Zn-N bond and a decrease in strength of the O 2p hybridized with Zn 4s states, which are consistent with the decrease of electron concentration in ZnO:N films with increasing nitrogen content and indicate the formation of acceptor states by occupation of oxygen sites with nitrogen. Linear dependence between the nitrogen content and the atomic layer doping percentage indicates the electrical properties and local electronic structures can be precisely controlled using this atomic layer doping technique.
SDGs
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
09.pdf
Size
23.38 KB
Format
Adobe PDF
Checksum
(MD5):854cc05a1659db5e2d6f42c5640b4de0