Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer
Journal
Electronics Letters
Journal Volume
37
Journal Issue
16
Pages
1045-1046
Date Issued
2001
Author(s)
Abstract
Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 ?m UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.
Type
journal article