Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution
Resource
Appl. Phys. Lett.,82 (20),3403-3405.
Applied Physics Letters 82 (20): 3403-3405
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
20
Pages
3403-3405
Date Issued
2003
Author(s)
Abstract
A study was performed on laser diodes with nonidentical multiple quantum wells. It was found that the temperature-induced carrier redistribution caused negative characteristic temperature for a certain temperature range. The low energy quantum wells behaved like reservoirs to overcome the detrimental influence of temperature.
Other Subjects
Energy gap; Semiconducting indium compounds; Semiconductor lasers; Carrier redistribution; Semiconductor quantum wells
Type
journal article